VS-ETF150Y65N
www.vishay.com
Vishay Semiconductors
EMIPAK 2B PressFit Power Module
3-Levels Half Bridge Inverter Stage, 150 A
FEATURES
• Trench IGBT technology
• FRED Pt
®
clamping diodes
• PressFit pins technology
• Exposed Al
2
O
3
substrate with low thermal resistance
• Short circuit rated
• Square RBSOA
• Integrated thermistor
• Low internal inductances
EMIPAK-2B
(package example)
• Low switching loss
• PressFit pins locking technology. Patent # US.263.820 B2
• UL approved file E78996
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
Q1 to Q4 IGBT
V
CES
V
CE(on)
typical at I
C
= 150 A
I
C
at T
C
= 82 °C
Speed
Package
Circuit configuration
650 V
1.70 V
150 A
8 kHz to 30 kHz
EMIPAK 2B
3-levels half bridge inverter stage
DESCRIPTION
VS-ETF150Y65N is an integrated solution for a multi level
inverter stage in a single package. The EMIPAK 2B package
is easy to use thanks to the PressFit pins and the exposed
substrate provides improved thermal performance. The
optimized layout also helps to minimize stray parameters,
allowing for better EMI performance.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Operating junction temperature
Storage temperature range
RMS isolation voltage
Q1 to Q4 IGBT
Collector to emitter voltage
Gate to emitter voltage
Pulsed collector current
Clamped inductive load current
Continuous collector current
V
CES
V
GES
I
CM
I
LM
I
C
T
C
= 25 °C
T
C
= 60 °C
T
SINK
= 60 °C
T
C
= 25 °C
T
C
= 60 °C
650
20
450
180
201
171
77
600
460
650
750
161
140
74
319
245
V
A
SYMBOL
T
J
T
Stg
V
ISOL
TEST CONDITIONS
MAX.
175
-40 to +150
3500
UNITS
°C
V
T
J
= 25 °C, all terminals shorted, f = 50 Hz, t = 1 s
A
Power dissipation
D5 - D6 CLAMPING DIODE
Repetitive peak reverse voltage
Single pulse forward current
Diode continuous forward current
P
D
W
V
RRM
I
FSM
I
F
V
Power dissipation
P
D
10 ms sine or 6 ms rectangular pulse, T
J
= 25 °C
T
C
= 25 °C
T
C
= 60 °C
T
SINK
= 60 °C
T
C
= 25 °C
T
C
= 60 °C
A
W
PATENT(S):
www.vishay.com/patents
This Vishay product is protected by one or more United States and International patents.
Revision: 03-May-2018
Document Number: 95989
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETF150Y65N
www.vishay.com
Vishay Semiconductors
SYMBOL
I
FSM
I
F
TEST CONDITIONS
10 ms sine or 6 ms rectangular pulse, T
J
= 25 °C
T
C
= 25 °C
T
C
= 60 °C
T
SINK
= 60 °C
T
C
= 25 °C
T
C
= 60 °C
MAX.
500
102
92
57
238
182
UNITS
ABSOLUTE MAXIMUM RATINGS
PARAMETER
D1 - D2 - D3 - D4 AP DIODE
Single pulse forward current
Diode continuous forward current
A
Power dissipation
P
D
W
Notes
• Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur
(1)
V
CC
= 325 V, V
GE
= 15 V, L = 500 μH, R
g
= 4.7
,
T
J
= 175 °C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise noted)
PARAMETER
Q1 to Q4 IGBT
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate threshold voltage
Temperature coefficient of threshold
voltage
Forward transconductance
Transfer characteristics
Zero gate voltage collector current
Gate to emitter leakage current
D5 - D6 CLAMPING DIODE
Cathode to anode blocking voltage
Forward voltage drop
Reverse leakage current
D1 - D2 - D3 - D4 AP DIODE
Forward voltage drop
V
FM
I
F
= 100 A
I
F
= 100 A, T
J
= 125 °C
-
-
2.1
1.64
2.9
-
V
BV
CES
V
CE(on)
V
GE(th)
V
GE(th)
/T
J
g
fe
V
GE
I
CES
I
GES
V
BR
V
FM
I
RM
V
GE
= 0 V, I
C
= 100 μA
V
GE
= 15 V, I
C
= 150 A
V
GE
= 15 V, I
C
= 150 A, T
J
= 125 °C
V
CE
= V
GE
, I
C
= 5.0 mA
V
CE
= V
GE
, I
C
= 1.0 mA (25 °C to 125 °C)
V
CE
= 20 V, I
C
= 150 A
V
CE
= 20 V, I
C
= 150 A
V
GE
= 0 V, V
CE
= 650 V
V
GE
= 0 V, V
CE
= 650 V, T
J
= 125 °C
V
GE
= ± 20 V, V
CE
= 0 V
I
R =
500 μA
I
F
= 100 A
I
F
= 100 A, T
J
= 125 °C
V
R
= 650 V
V
R
= 650 V, T
J
= 125 °C
650
-
-
5.0
-
-
-
-
-
-
650
-
-
-
-
-
1.70
1.95
6.0
-18
102
10.2
0.1
130
-
-
1.64
1.35
0.3
100
-
2.17
-
8.4
-
-
-
100
-
± 600
-
2.2
-
100
-
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
V
mV/°C
S
V
μA
nA
V
μA
SWITCHING CHARACTERISTICS
(T
J
= 25 °C unless otherwise noted)
PARAMETER
Q1 to Q4 IGBT
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Input capacitance
Output capacitance
Reverse transfer capacitance
Q
g
Q
ge
Q
gc
C
ies
C
oes
C
res
I
C
= 150 A
V
CC
= 400 V
V
GE
= 15 V
V
GE
= 0 V
V
CC
= 30 V
f = 1 MHz
-
-
-
-
-
-
310
95
130
9900
460
250
-
-
-
-
-
-
pF
nC
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Revision: 03-May-2018
Document Number: 95989
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETF150Y65N
www.vishay.com
Vishay Semiconductors
SYMBOL
E
on
E
off
E
tot
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
tot
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
tot
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
tot
t
d(on)
t
r
t
d(off)
t
f
RBSOA
T
J
= 175 °C, I
C
= 180 A,
V
CC
= 325 V, V
P
= 650 V,
R
g
= 4.7
,
V
GE
= 15 V to 0 V
R
g
= 5.0
,
V
CC
= 400 V,
V
P
= 600 V, V
GE
= 15 V to 0,
T
J
= 150 °C
V
R
= 200 V
I
F
= 50 A
dl/dt = 500 A/μs
V
R
= 200 V
I
F
= 50 A
dl/dt = 500 A/μs, T
J
= 125 °C
-
I
C
= 150 A
V
CC
= 325 V
V
GE
= 15 V
R
g
= 4.7
L = 500 μH
T
J
= 125 °C
(1)
I
C
= 150 A
V
CC
= 325 V
V
GE
= 15 V
R
g
= 4.7
L = 500 μH
(1)
I
C
= 150 A
V
CC
= 325 V
V
GE
= 15 V
R
g
= 4.7
L = 500 μH
T
J
= 125 °C
(1)
I
C
= 150 A
V
CC
= 325 V
V
GE
= 15 V
R
g
= 4.7
L = 500 μH
(1)
TEST CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
0.69
3.4
4.1
161
108
139
91
0.9
4.2
5.1
160
109
150
97
0.8
4.0
4.8
144
117
144
98
0.98
4.7
5.7
166
120
153
106
Fullsquare
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
mJ
ns
mJ
ns
mJ
ns
mJ
UNITS
SWITCHING CHARACTERISTICS
(T
J
= 25 °C unless otherwise noted)
PARAMETER
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Q2 and Q3 IGBT with D2 and D3 AP DIODE
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse bias safe operating area
Q1 and Q4 IGBT with D5 and D6 CLAMP DIODE
Short circuit safe operating area
D5 - D6 CLAMPING DIODE
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
D1 - D2 - D3 - D4 AP DIODE
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
SCSOA
-
5.5
μs
t
rr
I
rr
Q
rr
t
rr
I
rr
Q
rr
t
rr
I
rr
Q
rr
t
rr
I
rr
-
-
-
-
-
-
-
-
-
-
-
-
78
11
433
155
28
2150
82
11
363
134
22
1500
-
-
-
-
-
-
-
-
-
-
-
-
ns
A
nC
ns
A
nC
ns
A
nC
ns
A
nC
V
R
= 200 V
I
F
= 50 A
dl/dt = 500 A/μs
V
R
= 200 V
I
F
= 50 A
dl/dt = 500 A/μs, T
J
= 125 °C
Diode recovery charge
Q
rr
Note
(1)
Energy losses include “tail” and diode reverse recovery
Revision: 03-May-2018
Document Number: 95989
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETF150Y65N
www.vishay.com
Vishay Semiconductors
SYMBOL
R25
R125
B
T
J
= 25 °C
T
J
= 100 °C
R
2
= R
25
exp. [B
25/50
(1/T
2
- 1/(298.15 K))]
TEST CONDITIONS
TYP.
5000 ± 5 %
493 ± 5 %
3375 ± 5 %
-40 to +125
220
2
8
UNITS
K
°C
mW/°C
s
INTERNAL NTC - THERMISTOR SPECIFICATIONS
PARAMETER
Resistance
B-constant
Temperature range
Maximum operating temperature
Dissipation constant
Thermal time constant
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Q1 to Q4 IGBT- junction to case thermal resistance (per switch)
D5 - D6 clamping diode - junction to case thermal resistance (per diode)
D1 - D2 - D3 - D4 AP diode - junction to case thermal resistance (per diode)
Q1 to Q4 IGBT - case to sink thermal resistance (per switch)
D5 - D6 clamping diode - case to sink thermal resistance (per diode)
D1 - D2 - D3 - D4 AP diode - case to sink thermal resistance (per diode)
Case to sink thermal resistance per module
Mounting torque (M4)
Weight
Note
(1)
Mounting surface flat, smooth, and greased
300
275
250
225
200
T
J
= 125 °C
175
150
125
100
75
50
25
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
T
J
= 175 °C
T
J
= 25 °C
300
275
250
225
200
175
V
GE
= 12 V
V
GE
= 15 V
V
GE
= 18 V
SYMBOL
R
thJC
MIN.
-
-
-
-
-
-
-
2
-
TYP.
-
-
-
0.62
0.7
0.7
0.1
-
45
MAX.
0.25
0.47
0.63
-
-
-
-
3
-
UNITS
°C/W
R
thCS (1)
Nm
g
I
C
(A)
I
C
(A)
150
125
100
75
50
25
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
GE
= 9 V
V
CE
(V)
Fig. 1 - I
C
vs. V
CE
,
Typical Q1 to Q4 Trench IGBT Output Characteristics,
V
GE
= 15 V
V
CE
(V)
Fig. 2 - I
C
vs. V
CE
Typical Q1 to Q4 Trench IGBT Output Characteristics,
T
J
= 125 °C
Revision: 03-May-2018
Document Number: 95989
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETF150Y65N
www.vishay.com
Vishay Semiconductors
10
T
J
= 175 °C
1
180
Allowable Case Temperature (°C)
160
140
120
100
80
60
40
0.0001
20
0
0
30
60
90
120
150
180
210
240
0.00001
50
I
CES
(mA)
DC
0.1
0.01
0.001
T
J
= 125 °C
T
J
= 25 °C
150
250
350
450
550
650
I
C
- Continuous Collector Current (A)
Fig. 3 - Allowable Case Temperature vs. Continuous Collector Current,
Maximum Q1 to Q4 Trench IGBT Continuous Collector Current vs.
Case Temperature
160
140
120
V
CE
= 20 V
V
CES
(V)
Fig. 6 - I
CES
vs V
CES
Typical Q1 to Q4 Trench IGBT Zero Gate Voltage Collector Current
6
5.5
5
4.5
4
Energy (mJ)
100
I
C
(A)
T
J
= 125 °C
80
60
40
20
0
5
6
7
8
9
10
11
12
T
J
= 25 °C
3.5
3
2.5
2
1.5
1
0.5
0
40
60
80
100
120
140
160
180
E
on
E
off
V
GE
(V)
Fig. 4 - I
C
vs V
GE
Typical Q1 to Q4 Trench IGBT Transfer Characteristics
I
C
(A)
Fig. 7 - Energy Loss vs. I
C
(Typical Q1 - Q4 Trench IGBT Energy Loss vs. I
C
(with D5 - D6 Clamping Diode)),
T
J
= 125 °C, V
CC
= 325 V, R
g
= 4.7
,
V
GE
= ± 15 V, L = 500 μH
1000
7.5
7.0
6.5
6.0
T
J
= 25 °C
V
GEth
(V)
5.5
5.0
4.5
4.0
3.5
3.0
2.5
0
1
2
3
4
5
T
J
= 125 °C
Switching
Time (ns)
t
d(on)
100
t
d(off)
t
r
t
f
10
40
60
80
100
120
140
160
180
I
C
(mA)
Fig. 5 - V
GEth
vs. I
C
Typical Q1 to Q4 Trench IGBT Gate Threshold Voltage
I
C
(A)
Fig. 8 - Switching Time vs. I
C
(Typical Q1 - Q4 Trench IGBT Switching Time vs. I
C
(with D5 - D6 Clamping Diode)),
T
J
= 125 °C, V
CC
= 325 V, R
g
= 4.7
,
V
GE
= ± 15 V, L = 500 μH
Revision: 03-May-2018
Document Number: 95989
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
京公网安备 11010802033920号
EEWORLD
