VS-1N1...A, VS-1N36..A Series
www.vishay.com
Vishay Semiconductors
Medium Power Silicon Rectifier Diodes, (Stud Version), 12 A
FEATURES
• Voltage ratings from 50 V to 1000 V
• High surge capability
• Low thermal impedance
• High temperature rating
• Can be supplied as JAN and JAN-TX devices in
accordance with MIL-S-19500/260
DO-4 (DO-203AA)
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
12 A
PRIMARY CHARACTERISTICS
I
F(AV)
Package
Circuit configuration
DO-4 (DO-203AA)
Single
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
FSM
I
2
t
TEST CONDITIONS
T
C
50 Hz
60 Hz
50 Hz
60 Hz
VALUES
12
150
230
240
260
240
-65 to +200
50 to 1000
UNITS
A
°C
A
A
2
s
°C
V
T
J
Range
V
RRM
Note
• JEDEC
®
registered values are in bold
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
V
RRM
, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
(T
C
= -65 °C TO 200 °C)
V
V
R(RMS)
, MAXIMUM RMS
REVERSE VOLTAGE
(T
C
= -65 °C TO 200 °C)
V
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
(T
C
= -65 °C TO 200 °C)
V
V
RM
, MAXIMUM DIRECT
REVERSE VOLTAGE
(T
C
= -65 °C TO 200 °C)
V
50
100
150
200
300
400
500
600
700
800
900
1000
1000
VS-1N1199A
50
35
100
VS-1N1200A
100
70
200
VS-1N1201A
150
105
300
VS-1N1202A
200
140
350
VS-1N1203A
300
210
450
VS-1N1204A
400
280
600
VS-1N1205A
500
350
700
VS-1N1206A
600
420
800
VS-1N3670A
700
490
900
VS-1N3671A
800
560
1000
VS-1N3672A
900
630
1100
VS-1N3673A
1000
700
1200
VS-1N3624
1000
1200
1400
Notes
• JEDEC
®
registered values are in bold
• Basic part number indicates cathode to case; for anode to case, add “R” to part number, e.g., 1N1199RA
Revision: 11-Jan-18
Document Number: 93493
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-1N1...A, VS-1N36..A Series
www.vishay.com
Vishay Semiconductors
SYMBOL
I
F(AV)
TEST CONDITIONS
180° sinusoidal conduction
Half cycle 50 Hz sine wave
or 6 ms rectangular pulse
Half cycle 60 Hz sine wave
or 5 ms rectangular pulse
Half cycle 50 Hz sine wave
or 6 ms rectangular pulse
Half cycle 60 Hz sine wave
or 5 ms rectangular pulse
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
I
2
t
(1)
V
FM
Following any rated load
condition and with rated
V
RRM
applied
Following any rated load
condition and with V
RRM
applied following surge = 0 V
With rated V
RRM
applied
following surge,
initial T
J
= 200 °C
With V
RRM
= 0 V following
surge, initial T
J
= 200 °C
VALUES
12
150
230
240
A
275
285
260
240
370
340
3715
1.35
3.0
2.5
2.25
2.0
1.75
1.5
1.25
1.0
0.9
0.8
0.7
0.6
A
2
s
V
A
2
s
UNITS
A
°C
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum peak one cycle non-repetitive
surge current
I
FSM
Maximum I
2
t for fusing
I
2
t
Maximum I
2
t for individual
device fusing
Maximum I
2
t
for individual
device fusing
Maximum forward voltage drop
V
RRM
= 50 V
V
RRM
= 100 V
V
RRM
= 150 V
V
RRM
= 200 V
V
RRM
= 300 V
V
RRM
= 400 V
Maximum average
reverse current
V
RRM
= 500 V
V
RRM
= 600 V
V
RRM
= 700 V
V
RRM
= 800 V
V
RRM
= 900 V
V
RRM
= 1000 V
t = 0.1 ms to 10 ms, V
RRM
= 0 V following surge
I
F(AV)
= 12 A (38 A peak), T
C
= 25 °C
I
R(AV) (2)
Maximum rated I
F(AV)
and T
C
mA
Notes
• JEDEC
®
registered values are in bold
(1)
I
2
t for time t = I
2
t
x
t
x
x
(2)
Maximum peak reverse current (I
RM
) under same conditions
2 x rated I
R(AV)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating case and
storage temperature range
Maximum internal thermal
resistance, junction to case
Thermal resistance,
case to sink
minimum
maximum
minimum
Mounting torque
maximum
minimum
maximum
Approximate weight
Case style
Note
• JEDEC registered values are in bold
Revision: 11-Jan-18
Document Number: 93493
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
JEDEC
®
SYMBOL
T
C
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Torque applied to nut; non-lubricated threads
Torque applied to nut; lubricated threads
Torque applied to device case; lubricated threads
TEST CONDITIONS
VALUES
-65 to 200
2.0
°C/W
0.5
1.36 (12)
1.69 (15)
1.07 (9.45)
N·m
(lbf · in)
1.30 (11.55)
1.17 (10.35)
1.43 (12.65)
7.0
g
0.25
oz.
DO-4 (DO-203AA)
UNITS
°C
VS-1N1...A, VS-1N36..A Series
www.vishay.com
Maximum Allowable Case Temperature (°C)
220
200
180
160
140
+180 °C
Wave
120
+180 °C
Wave
+120 °C
&
Wave
100
+60 °C
&
Wave
0
0
2
4
6
8
DC
Vishay Semiconductors
I
F
- Instantaneous Forward Current (A)
10
3
5
2
10
2
5
2
T
J
= 200 °C
10
5
2
1.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
25 °C
Conduction Period
10
12
14
16
18
20
Average Forward Current Over Full Cycle (A)
Fig. 1 - Average Forward Current vs.
Maximum Allowable Case Temperature
Instantaneous Forward Voltage (V)
Fig. 4 - Maximum Forward Voltage vs. Forward Current
Z
thJC
- Transient Thermal Impedance (°C/W)
14
Average Forward Power Loss
Over Full Cycle (W)
10
5
2
1.0
5
2
10
-1
5
2
10
-2
10
-4
2 5
10
-3
Steady State
Value = 2.0 °C/W
12
10
8
6
4
2
0
0
2
4
6
8
10
+180 °C
+180 °C
+120 °C
+60 °C
Wave
Wave
&
&
Wave
Wave
DC
T
J
= 200°C
Conduction Period
2 5
10
-2
2 5
10
-1
2 5
1
2 5
10
Average Forward Current Over Full Cycle (A)
Fig. 2 - Maximum Low Level Forward Power Loss vs.
Average Forward Current
t -
Square
Wave Pulse Duration (s)
Fig. 5 - Maximum Transient Thermal Impedance,
Junction to Case vs. Pulse Duration
Peak Half
Sine
Wave Forward Current (A)
10
2
10
4
5
2
DC
300
At Any Rated Load Condition And With
Rated V
RRM
Applied Following
Surge
200
Average Forward Power Loss
Over Full Cycle (W)
5
2
10
5
2
+180 °C
+180 °C
Wave
Wave
10
3
5
2
+120 °C
+120 °C
&
&
Wave
Wave
60 Hz
100
50 Hz
1.0
1.0
T
J
= 200°C
Conduction Period
2
5 10
2
5 10
2
2
10
2
5 10
3
0
1 1
2
4
6 8 10
20
40 60
Average Forward Current Over Full Cycle (A)
Fig. 3 - Maximum High Level Forward Power Loss vs.
Average Forward Current
Number Of Equal Amplitude
Half Cycle Current Pulses (N)
Fig. 6 - Maximum Non-Repetitive 50 Hz Surge Current vs.
Number of Current Pulses
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95311
Revision: 11-Jan-18
Document Number: 93493
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
DO-203AA (DO-4)
DIMENSIONS
in millimeters (inches)
3.30 (0.13)
4.00 (0.16)
0.8 ± 0.1
(0.03 ± 0.004)
+ 0.3
0
+ 0.01
(0.08
0
)
2
5.50 (0.22) MIN.
Ø 1.80 ± 0.20
(Ø 0.07 ± 0.01)
20.30 (0.80) MAX.
10.20 (0.40)
MAX.
3.50 (0.14)
R 0.40
R (0.02)
Ø 6.8 (0.27)
11.50 (0.45)
10.70 (0.42)
10/32" UNF-2A
For metric devices: M5 x 0.8
11 (0.43)
Document Number: 95311
Revision: 30-Jun-08
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
1
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Disclaimer
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Revision: 08-Feb-17
1
Document Number: 91000