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November 1998
FDS6875
Dual P-Channel 2.5V Specified PowerTrench
TM
MOSFET
General Description
These P-Channel
2.5V specified MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored to
minimize the on-state resistance and yet maintain low gate
charge for superior switching performance.
These devices are well suited for portable electronics
applications: load switching and power management,
battery charging and protection circuits.
Features
-6 A, -20 V. R
DS(ON)
= 0.030
Ω
@ V
GS
= -4.5 V,
R
DS(ON)
= 0.040
Ω
@ V
GS
= -2.5 V.
Low gate charge (23nC typical).
High performance trench technology for extremely low
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -1.3 A
(Note 2)
-0.7
-1.2
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
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