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TT142N12KOF

Description
Discrete Semiconductor Modules 1200V 230A DUAL
CategoryAnalog mixed-signal IC    Trigger device   
File Size409KB,13 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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Discrete Semiconductor Modules 1200V 230A DUAL

TT142N12KOF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeMODULE
package instructionFLANGE MOUNT, R-XUFM-X7
Contacts7
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresUL RECOGNIZED
Shell connectionISOLATED
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Maximum DC gate trigger current150 mA
Quick connection description2G-2GR
Description of screw terminalsA-K-AK
JESD-30 codeR-XUFM-X7
On-state non-repetitive peak current4100 A
Number of components2
Number of terminals7
Maximum on-state current142000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum rms on-state current230 A
Off-state repetitive peak voltage1200 V
Repeated peak reverse voltage1200 V
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR
N
Netz-Thyristor-Modul
Phase Control Thyristor Module
Datenblatt / Data sheet
TT142N
TT142N
Kenndaten
TT142N...-K
TD142N
TD142N...-A
DT142N
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung T
vj
= -40°C... T
vj max
repetitive peak forward off-state and reverse voltages
Vorwärts-Stoßspitzensperrspannung
non-repetitive peak forward off-state voltage
Rückwärts-Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
T
C
= 85°C
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
DIN IEC 747-6 f = 50 Hz,
i
GM
= 0,6 A, di
G
/dt = 0,6 A/µs
T
vj
= T
vj max
, v
D
= 0,67 V
DRM
6.Kennbuchstabe / 6
th
letter F
T
vj
= -40°C... T
vj max
T
vj
= +25°C... T
vj max
Elektrische Eigenschaften
V
DRM
,V
RRM
1200
V
DSM
V
RSM
I
TRMSM
I
TAVM
I
TSM
I²t
(di
T
/dt)
cr
(dv
D
/dt)
cr
1200
1300
1400 V
1600 V
1400 V
1600 V
1500 V
1700 V
230 A
142 A
4800 A
4100 A
115000 A²s
84000 A²s
150 A/µs
1000 V/µs
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse current
Zündverzug
gate controlled delay time
prepared by: C.Drilling
approved by: J. Novotny
T
vj
= T
vj max
, i
T
= 500 A
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= 25°C, v
D
= 6 V
T
vj
= 25°C, v
D
= 6 V
T
vj
= T
vj max
, v
D
= 6 V
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= 25°C, v
D
= 6 V, R
A
= 5
T
vj
= 25°C, v
D
= 6 V, R
GK
10
i
GM
= 0,6 A, di
G
/dt = 0,6 A/µs,
t
g
= 20 µs
T
vj
= T
vj max
v
D
= V
DRM
, v
R
= V
RRM
DIN IEC 747-6 T
vj
= 25 °C,
i
GM
= 0,6 A, di
G
/dt = 0,6 A/µs
date of publication:
revision:
03.07.02
1
v
T
V
(TO)
r
T
I
GT
V
GT
I
GD
V
GD
I
H
I
L
max.
1,56 V
0,9 V
1,1 mΩ
max.
max.
max.
max.
max.
max.
max.
150 mA
2 V
10 mA
5 mA
0,25 V
200 mA
800 mA
i
D
, i
R
t
gd
max.
max.
30 mA
3 µs
BIP AC / 22 Nov , A.Rüther
A70 / 95
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