August 29
th
, 2011
Automotive Grade
AUIRS2112S
HIGH- AND LOW-SIDE DRIVER
Features
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Product Summary
High and Low Side Driver
≤
600 V
10 V – 20 V
290 mA & 600 mA
140 ns & 140 ns
Drives IGBT/MOSFET power devices
Topology
Floating channel designed for bootstrap operation
Fully operational to +600 V
V
OFFSET
Tolerant to negative transient voltage – dV/dt immune
V
OUT
Gate drive supply range from 10 V to 20 V
Undervoltage lockout for both channels
I
o+
& I
o-
(typical)
3.3 V input logic compatible
t
ON
& t
OFF
(typical)
Separate logic supply range from 3.3 V to 20 V
Logic and power ground +/- 5 V offset
CMOS Schmitt-triggered inputs with pull-down
Package Options
shutdown logic
Matched propagation delay for both channels
Output in phase with inputs
Leadfree, RoHS compliant
Automotive qualified*
Typical Applications
•
•
Piezo, Common Rail Injection
MOSFET and IGBT gate drivers
16-Lead SOIC Wide Body
AUIRS2112S
Typical Connection Diagram
AUIRS2112S
* Qualification standards can be found on IR’s web site www.irf.com
© 2008 International Rectifier
AUIRS2112S
Table of Contents
Description
Qualification Information
Absolute Maximum Ratings
Recommended Operating Conditions
Static Electrical Characteristics
Dynamic Electrical Characteristics
Functional Block Diagram
Input/Output Pin Equivalent Circuit Diagram
Lead Definitions
Lead Assignments
Application Information and Additional Details
Tolerability to Negative VS Transients
Parameter Temperature Voltage Trends
Package Details
Tape and Reel Details
Part Marking Information
Ordering Information
Important Notice
Page
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4
5
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10-11
12
13-20
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23
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© 2008 International Rectifier
2
AUIRS2112S
Description
The AUIRS2112S is a high voltage, high speed power MOSFET and IGBT driver with independent high- and low-
side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized
monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic.
The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.
Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to
drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 V.
www.irf.com
© 2008 International Rectifier
3
AUIRS2112S
Qualification Information
†
Qualification Level
Automotive
(per AEC-Q100
††
)
Comments: This family of ICs has passed an Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive
level.
SOIC16W
Machine Model
MSL3
†††
260°C
(per IPC/JEDEC J-STD-020)
Moisture Sensitivity Level
ESD
Human Body Model
Charged Device Model
IC Latch-Up Test
RoHS Compliant
†
††
†††
††††
Class M2 (Pass +/-150 V)
(per AEC-Q100-003)
Class H1B (Pass +/-1000V)
(per AEC-Q100-002)
Class C4 (Pass +/-1000V)
(per AEC-Q100-011)
Class II, Level B
††††
(per AEC-Q100-004)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/
Exceptions to AEC-Q100 requirements are noted in the qualification report.
Higher MSL ratings may be available for the specific package types listed here. Please contact your
International Rectifier sales representative for further information.
Input pins can withstand up to 40 mA.
www.irf.com
© 2008 International Rectifier
4
AUIRS2112S
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM lead. Stresses beyond those listed under "
Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the “Recommended
Operating Conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may
affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted
and still air conditions. Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Symbol
V
B
V
S
V
HO
V
CC
V
LO
V
DD
V
SS
V
IN
dV
S
/dt
P
D
Rth
JA
T
J
T
S
T
L
Rth
JC
Definition
High-side floating supply voltage
High-side floating supply offset voltage
High-side floating output voltage
Low-side fixed supply voltage
Low-side output voltage
Logic supply voltage
Logic supply offset voltage
Logic input voltage (HIN, LIN & SD)
Allowable offset supply voltage transient (Fig. 2)
Package power dissipation @ TA
≤
25°C
Thermal resistance, junction to ambient
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
Thermal resistance, junction to case
Min.
-0.3
V
B
- 25
V
S
- 0.3
-0.3
-0.3
-0.3
V
CC
- 25
V
SS
-0.3
—
—
—
—
-55
—
---
Max.
625
V
B
+ 0.3
V
B
+ 0.3
25
V
CC
+ 0.3
V
SS
+ 25
V
CC
+ 0.3
V
DD
+ 0.3
50
1.25
100
150
150
300
12.72
Units
V
V/ns
W
°C/W
°C
°C/W
Recommended Operation Conditions
The input/output logic timing diagram is shown in Figure 1. For proper operation the device should be used within
the recommended conditions. The V
S
and V
SS
offset rating are tested with all supplies biased at 15 V differential.
Symbol
Definition
Min.
Max.
Units
V
B
High-side floating supply absolute voltage
V
S
+10
V
S
+20
V
S
High-side floating supply offset voltage
†
600
V
HO
High-side floating output voltage
V
S
V
B
V
CC
Low-side fixed supply voltage
10
20
V
V
LO
Low-side output voltage
0
V
CC
V
DD
Logic supply voltage
V
SS
+ 3
V
SS
+ 20
V
SS
Logic ground offset voltage
5
-5 (††)
V
IN
Logic input voltage (HIN, LIN & SD)
V
SS
V
DD
T
A
Ambient temperature
-40
125
°C
† Logic operational for V
S
of -5 V to +600 V. Logic state held for V
S
of -5 V to – V
BS
(Static).
Please refer to ‘Tolerability to Negative VS Transients’ section.
†† When V
DD
< 5 V, the minimum V
SS
offset is limited to –V
DD
.
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© 2008 International Rectifier
5
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