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GBPC25005T

Description
Bridge Rectifiers 50 V - 25 A
CategoryDiscrete semiconductor    diode   
File Size334KB,5 Pages
ManufacturerGeneSiC
Websitehttp://www.genesicsemi.com/
Environmental Compliance
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GBPC25005T Overview

Bridge Rectifiers 50 V - 25 A

GBPC25005T Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerGeneSiC
Reach Compliance Codecompliant
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
Maximum non-repetitive peak forward current300 A
Number of components4
Maximum operating temperature150 °C
Maximum output current25 A
Maximum repetitive peak reverse voltage50 V
GBPC25005T/W thru GBPC2504T/W
Single Phase Glass Passivated
Silicon Bridge Rectifier
Features
• Integrally molded heat sink provides low thermal resistance
for maximum heat dissipation
• High surge current capability
• Universal 3-way terminals: snap on, wire-around, or P.C
board mounting
• High temperature soldering guaranteed: 260⁰C/ 10 seconds
at 5 lbs (2.3 kg) tension
• Not ESD Sensitive
V
RRM
= 50 V - 400 V
I
O
= 25 A
GBPC-T/W Package
Mechanical Data
Case: Molded plastic with heat sink integrally mounted in the bridge
encapsulation
Terminals: Either nickel plated 0.25". Faston lugs or copper leads
0.040" diameter.
Polarity: Polarrity symbols marked on the body
Mounting position: Bolt down on heat-sink with silicone thermal
compound between bridge and mounting surface
Weight: 15 grams or 0.53 ounces
Mounting torque: 20 inch-lbs max
Maximum ratings at Tc = 25 °C, unless otherwise specified (GBPCXXXXT uses GBPC-T package while GBPCXXXXW
uses GBPC-W package)
Parameter
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
T
j
T
stg
Conditions
GBPC25005T/W GBPC2501T/W GBPC2502T/W GBPC2504T/W
Unit
V
V
V
°C
°C
50
35
50
-55 to 150
-55 to 150
100
70
100
-55 to 150
-55 to 150
200
140
200
-55 to 150
-55 to 150
400
280
400
-55 to 150
-55 to 150
Electrical characteristics at Tc = 25 °C, unless otherwise specified
Single phase, half sine wave, 60 Hz, resistive or inductive load
For capacitive load derate current by 20%
Parameter
Maximum average forward rectified
current
Peak forward surge current
Maximum instantaneous forward
voltage drop per leg
Maximum DC reverse current at
rated DC blocking voltage per leg
Rating for fusing
RMS isolation voltage from case to
leads
Symbol
I
O
I
FSM
V
F
I
R
I
2
t
V
ISO
C
j
R
ΘJC
Conditions
T
c
= 50 °C
single sine-wave
I
F
= 12.5 A
T
a
= 25 °C
T
a
= 125 °C
1 ms < t
m
< 8.3 ms
GBPC25005T/W GBPC2501T/W GBPC2502T/W GBPC2504T/W
Unit
A
A
V
μA
A
2
sec
V
pF
°C/W
25.0
300
1.1
5
500
375
2500
300
1.9
25.0
300
1.1
5
500
375
2500
300
1.9
25.0
300
1.1
5
500
375
2500
300
1.9
25.0
300
1.1
5
500
375
2500
300
1.9
Typical junction capacitance
Typical thermal resistance
Apr 2016
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/bridge-rectifiers/
1

GBPC25005T Related Products

GBPC25005T GBPC2502W GBPC2501W GBPC2502T
Description Bridge Rectifiers 50 V - 25 A Bridge Rectifiers 200 V - 25 A Bridge Rectifiers 100 V - 25 A Bridge Rectifiers 200 V - 25 A
Is it lead-free? Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to
Maker GeneSiC GeneSiC GeneSiC GeneSiC
Reach Compliance Code compliant compliant compliant compliant
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V 1.1 V
Maximum non-repetitive peak forward current 300 A 300 A 300 A 300 A
Number of components 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Maximum output current 25 A 25 A 25 A 25 A
Maximum repetitive peak reverse voltage 50 V 200 V 100 V 200 V
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