SiHH11N65EF
www.vishay.com
Vishay Siliconix
E Series Power MOSFET with Fast Body Diode
PRODUCT SUMMARY
V
DS
(V) at T
J
max.
R
DS(on)
typ. () at 25 °C
Q
g
max. (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
70
8
15
Single
Pin 4
FEATURES
700
0.332
PowerPAK
®
8 x 8
•
•
•
•
•
•
•
•
Completely lead (Pb)-free device
Low figure-of-merit (FOM) R
on
x Q
g
Low input capacitance (C
iss
)
Reduced switching and conduction losses
Ultra low gate charge (Q
g
)
Avalanche energy rated (UIS)
Kelvin connection for reduced gate noise
Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
4
1
2
3
3
Pin 1
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
• Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Renewable energy
- Solar (PV inverters)
•
•
•
•
Pin 2
Pin 3
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
PowerPAK 8 x 8
SiHH11N65EF-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche Energy
b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dt
c
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. V
DD
= 140 V, starting T
J
= 25 °C, L = 28.2 mH, R
g
= 25
,
I
AS
= 3 A.
c. I
SD
I
D
, dI/dt = 100 A/μs, starting T
J
= 25 °C.
T
J
= 125 °C
E
AS
P
D
T
J
, T
stg
dV/dt
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
650
± 30
11
7
27
1
127
130
-55 to +150
70
26
W/°C
mJ
W
°C
V/ns
A
UNIT
V
S16-0524-Rev. A, 21-Mar-16
Document Number: 91786
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiHH11N65EF
www.vishay.com
Vishay Siliconix
SYMBOL
R
thJA
R
thJC
TYP.
42
0.72
MAX.
55
0.96
UNIT
°C/W
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance, Energy
Related
a
Effective Output Capacitance, Time
Related
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
C
o(er)
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 10 mA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 20 V
V
GS
= ± 30 V
V
DS
= 520 V, V
GS
= 0 V
V
DS
= 520 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 6 A
V
DS
= 30 V, I
D
= 6 A
MIN.
650
-
2.0
-
-
-
-
-
-
-
-
-
-
TYP.
-
0.75
-
-
-
-
-
0.332
4.6
1243
62
4
44
171
35
8
15
19
26
43
25
0.7
MAX.
-
-
4.0
± 100
±1
1
500
0.382
-
-
-
-
UNIT
V
V/°C
V
nA
μA
μA
S
V
GS
= 0 V,
V
DS
= 100 V,
f = 1 MHz
pF
-
-
70
-
-
38
52
86
50
1.4
ns
nC
V
DS
= 0 V to 520 V, V
GS
= 0 V
C
o(tr)
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
g
f = 1 MHz, open drain
V
DD
= 520 V, I
D
= 6 A,
V
GS
= 10 V, R
g
= 9.1
V
GS
= 10 V
I
D
= 6 A, V
DS
= 520 V
-
-
-
-
-
-
-
-
0.4
-
-
-
-
-
-
-
-
0.9
108
0.5
9.6
11
A
21
1.2
216
1.0
-
V
ns
μC
A
G
S
T
J
= 25 °C, I
S
= 6 A, V
GS
= 0 V
T
J
= 25 °C, I
F
= I
S
= 6 A,
dI/dt = 100 A/μs, V
R
= 25 V
Notes
a. C
oss(er)
is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 % to 80 % V
DS
.
b. C
oss(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 % to 80 % V
DS
.
S16-0524-Rev. A, 21-Mar-16
Document Number: 91786
2
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiHH11N65EF
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
30
TOP
Vishay Siliconix
3.0
R
DS(on)
, Drain-to-Source On-Resistance
(Normalized)
15 V
14 V
13 V
12 V
11 V
10 V
9V
8V
7V
6V
BOTTOM 5 V
T
J
= 25 °C
2.5
I
D
= 6 A
25
I
D
, Drain-to-Source Current (A)
20
2.0
15
1.5
10
1.0
V
GS
= 10 V
0.5
5
0
0
5
10
15
V
DS
, Drain-to-Source Voltage (V)
20
0
-60 -40 -20
0 20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
Fig. 1 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
20
15 V
14 V
13 V
12 V
11 V
10 V
9V
8V
7V
6V
BOTTOM 5 V
TOP
10 000
T
J
= 150 °C
C
iss
1000
C, Capacitance (pF)
I
D
, Drain-to-Source Current (A)
15
10
100
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
5
10
C
rss
0
0
5
10
15
V
DS
, Drain-to-Source Voltage (V)
20
1
0
100
200
300
400
500
V
DS
, Drain-to-Source Voltage (V)
600
Fig. 2 - Typical Output Characteristics
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
30
T
J
= 25 °C
10 000
8
7
6
25
I
D
, Drain-to-Source Current (A)
20
C
oss
(pF)
T
J
= 150 °C
1000
C
oss
E
oss
5
4
3
2
E
oss
(μJ)
15
10
100
5
1
0
0
5
V
DS
= 30.2 V
10
10
15
V
GS
,
Gate-to-Source
Voltage (V)
20
0
100
200
300
V
DS
400
500
600
0
Fig. 3 - Typical Transfer Characteristics
Fig. 6 - C
OSS
and E
OSS
vs. V
DS
S16-0524-Rev. A, 21-Mar-16
Document Number: 91786
3
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiHH11N65EF
www.vishay.com
Vishay Siliconix
12
24
V
DS
= 520 V
V
DS
= 325 V
V
DS
= 130 V
V
GS
,
Gate-to-Source
Voltage (V)
20
9
I
D
, Drain Current (A)
0
20
40
60
80
16
12
6
8
3
4
0
Q
g
, Total
Gate
Charge (nC)
0
25
50
75
100
125
T
C
, Case Temperature (°C)
150
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 10 - Maximum Drain Current vs. Case Temperature
100
V
DS
, Drain-to-Source Breakdown Voltage (V)
875
850
825
800
775
750
725
700
I
D
= 10 mA
675
-60 -40 -20
0 20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
I
SD
, Reverse Drain Current (A)
10
T
J
= 150 °C
T
J
= 25 °C
1
V
GS
= 0 V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
,
Source-Drain
Voltage (V)
1.4
1.6
Fig. 8 - Typical Source-Drain Diode Forward Voltage
100
Operation in this Area
Limited by R
DS(on)
10
I
D
, Drain Current (A)
100 μs
1
Limited by R
DS(on)
*
1 ms
0.1
10 ms
I
DM
Limited
Fig. 11 - Temperature vs. Drain-to-Source Voltage
T
C
= 25
°C
T
J
= 150 °C
Single
Pulse
BVDSS Limited
1
0.01
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
Fig. 9 - Maximum Safe Operating Area
S16-0524-Rev. A, 21-Mar-16
Document Number: 91786
4
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiHH11N65EF
www.vishay.com
Vishay Siliconix
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single
Pulse
0.01
0.000001
0.00001
0.0001
0.001
Pulse Time (s)
0.01
0.1
1
Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Normalized Effective Transient
Thermal Impedance
0.01
Single
Pulse
0.001
0.0001
0.001
0.01
0.1
Pulse Time (s)
1
10
100
1000
Fig. 13 - Normalized Thermal Transient Impedance, Junction-to-Ambient
R
D
L
Vary t
p
to obtain
required I
AS
V
DS
V
DS
V
GS
R
G
D.U.T.
+
-
V
DD
R
G
D.U.T
I
AS
+
-
V
DD
10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
10 V
t
p
0.01
Ω
Fig. 14 - Switching Time Test Circuit
V
DS
90 %
Fig. 16 - Unclamped Inductive Test Circuit
V
DS
t
p
V
DD
V
DS
t
d(on)
t
r
t
d(off)
t
f
10 %
V
GS
I
AS
Fig. 17 - Unclamped Inductive Waveforms
Fig. 15 - Switching Time Waveforms
S16-0524-Rev. A, 21-Mar-16
Document Number: 91786
5
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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