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MBR200100CTS

Description
Schottky Diodes & Rectifiers 100V 200A
Categorysemiconductor    Discrete semiconductor   
File Size365KB,4 Pages
ManufacturerGeneSiC
Websitehttp://www.genesicsemi.com/
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Schottky Diodes & Rectifiers 100V 200A

MBR200100CTS Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerGeneSiC
Product CategorySchottky Diodes & Rectifiers
RoHSDetails
ProductSchottky Diodes
Mounting StyleSMD/SMT
Package / CaseSOT-227
If - Forward Current200 A
Vrrm - Repetitive Reverse Voltage100 V
TechnologySi
Ir - Reverse Current10 uA
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 175 C
PackagingBulk
Operating Temperature Range- 40 C to + 175 C
Factory Pack Quantity10
Unit Weight1.058219 oz
MBR200100CTS
Silicon Power
Schottky Diode
Features
High Surge Capability
V
RRM
I
F
Package
=
=
100 V
200 A
Pin 2
Pin 4
Pin 1
Pin 3
SOT – 227
Maximum Ratings at T
j
= 125 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
I
F
T
j
T
stg
Conditions
Values
100
70
100
200
-40 to 175
-40 to 175
Unit
V
V
V
A
°C
°C
T
C
≤ 85 °C
Electrical Characteristics at T
j
= 125 °C, unless otherwise specified (Per Leg)
Parameter
Diode forward voltage
Reverse current
Total capacitance
Symbol
V
F
I
R
C
Conditions
I
F
= 100 A, T
j
= 25 °C
I
F
= 100 A, T
j
= 125 °C
V
R
= 80 V, T
j
= 25 °C
V
R
= 80 V, T
j
= 125 °C
V
R
= 1 V, f = 1 MHz, T
j
= 25 °C
V
R
= 50 V, f = 1 MHz, T
j
= 25 °C
V
R
= 100 V, f = 1 MHz, T
j
= 25 °C
min.
Values
typ.
0.9
0.8
3.75
1830
4960
854
617
max.
0.95
10
5000
Unit
V
µA
pF
Thermal Characteristics
Thermal resistance, junction - case
R
thJC
1.87
°C/W
Figure 1: Typical Forward Characteristics(Per Leg)
Mar 2012
Figure 2: Typical Reverse Characteristics(Per Leg)
Pg1 of
3
http://www.genesicsemi.com/silicon-products/schottky-rectifiers/
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