Infineon
IGBT
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Avalanche rated
Pin 1
G
Type
BUP 213
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
Symbol
Values
1200
1200
Pin 2
C
BUP 213
Pin 3
E
V
CE
I
C
Package
TO-220 AB
Ordering Code
Q67040-A4407
1200V 32A
Unit
V
V
CE
V
CGR
V
GE
I
C
R
GE
= 20 kΩ
Gate-emitter voltage
DC collector current
± 20
A
32
20
T
C
= 25 °C
T
C
= 90 °C
Pulsed collector current,
t
p
= 1 ms
I
Cpuls
64
40
T
C
= 25 °C
T
C
= 90 °C
Avalanche energy, single pulse
E
AS
22
mJ
I
C
= 15 A,
V
CC
= 50 V,
R
GE
= 25
Ω
L
= 200 µH,
T
j
= 25 °C
Power dissipation
P
tot
200
W
-55 ... + 150
-55 ... + 150
°C
T
C
= 25 °C
Chip or operating temperature
Storage temperature
T
j
T
stg
Semiconductor Group
1
Nov-30-1995
Infineon
Maximum Ratings
Parameter
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Thermal Resistance
IGBT thermal resistance, chip case
Symbol
-
-
Values
E
55 / 150 / 56
BUP 213
Unit
-
R
thJC
≤
0.63
K/W
Electrical Characteristics,
at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
min.
Static Characteristics
Gate threshold voltage
Values
typ.
max.
Unit
V
GE(th)
4.5
5.5
2.7
3.3
3.4
4.3
-
-
6.5
3.2
3.9
-
-
V
V
GE
=
V
CE,
I
C
= 0.35 mA
Collector-emitter saturation voltage
V
CE(sat)
-
-
-
-
V
GE
= 15 V,
I
C
= 15 A,
T
j
= 25 °C
V
GE
= 15 V,
I
C
= 15 A,
T
j
= 125 °C
V
GE
= 15 V,
I
C
= 30 A,
T
j
= 25 °C
V
GE
= 15 V,
I
C
= 30 A,
T
j
= 125 °C
Zero gate voltage collector current
I
CES
-
0.8
mA
nA
-
100
V
CE
= 1200 V,
V
GE
= 0 V,
T
j
= 25 °C
Gate-emitter leakage current
I
GES
V
GE
= 25 V,
V
CE
= 0 V
AC Characteristics
Transconductance
g
fs
-
12
1000
150
70
-
S
pF
-
1350
225
100
V
CE
= 20 V,
I
C
= 15 A
Input capacitance
C
iss
C
oss
-
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
Output capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
Reverse transfer capacitance
C
rss
-
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
Semiconductor Group
2
Nov-30-1995
Infineon
Electrical Characteristics,
at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
min.
Switching Characteristics, Inductive Load at
T
j
= 125 °C
Turn-on delay time
t
d(on)
Values
typ.
max.
BUP 213
Unit
ns
70
100
V
CC
= 600 V,
V
GE
= 15 V,
I
C
= 15 A
R
Gon
= 82
Ω
Rise time
-
t
r
-
45
70
V
CC
= 600 V,
V
GE
= 15 V,
I
C
= 15 A
R
Gon
= 82
Ω
Turn-off delay time
t
d(off)
-
400
530
V
CC
= 600 V,
V
GE
= -15 V,
I
C
= 15 A
R
Goff
= 82
Ω
Fall time
t
f
-
70
95
V
CC
= 600 V,
V
GE
= -15 V,
I
C
= 15 A
R
Goff
= 82
Ω
Semiconductor Group
3
Nov-30-1995
Infineon
Power dissipation
P
tot
=
ƒ
(T
C
)
parameter:
T
j
≤
150 °C
220
W
A
BUP 213
Collector current
I
C
=
ƒ
(T
C
)
parameter:
V
GE
≥
15 V ,
T
j
≤
150 °C
32
P
tot
180
160
140
120
I
C
24
20
16
100
80
60
40
4
20
0
0
0
20
40
60
80
100
120
°C
160
0
20
40
60
80
100
120
°C
160
12
8
T
C
T
C
Safe operating area
I
C
=
ƒ
(V
CE
)
parameter:
D
= 0,
T
C
= 25°C ,
T
j
≤
150 °C
10
2
t
= 9.0µs
p
10 µs
Transient thermal impedance
Z
th JC
=
ƒ
(t
p
)
parameter:
D = t
p
/
T
10
0
IGBT
A
K/W
I
C
10
1
100 µs
Z
thJC
10
-1
D = 0.50
0.20
10
0
1 ms
10
-2
0.10
0.05
10 ms
single pulse
0.02
0.01
DC
10
-1
10
0
10
1
10
2
10
3
V
10
-3
-5
10
10
-4
10
-3
10
-2
10
-1
s 10
0
V
CE
t
p
Semiconductor Group
4
Nov-30-1995
Infineon
Typ. output characteristics
Typ. output characteristics
BUP 213
I
C
=
f
(V
CE
)
parameter:
t
p
= 80 µs,
T
j
= 25 °C
30
A
17V
15V
13V
11V
9V
7V
I
C
=
f
(V
CE
)
parameter:
t
p
= 80 µs,
T
j
= 125 °C
30
A
17V
15V
13V
11V
9V
7V
I
C
24
22
20
18
16
14
12
10
8
6
4
2
0
0
I
C
24
22
20
18
16
14
12
10
8
6
4
2
0
0
1
2
3
V
5
1
2
3
V
5
V
CE
V
CE
Typ. transfer characteristics
I
C
=
f
(V
GE
)
parameter:
t
p
= 80 µs,
V
CE
= 20 V
30
A
I
C
24
22
20
18
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10
V
14
V
GE
Semiconductor Group
5
Nov-30-1995
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