TC55VD1618FF-150 datasheet, PDF

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TC55VD1618FF-150: DescriptionTOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS; Categorystorage storage; File Size879KB，20 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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TC55VD1618FF-150 Overview

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

TC55VD1618FF-150 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Toshiba Semiconductor
Parts packaging code	QFP
package instruction	LQFP, QFP100,.63X.87
Contacts	100
Reach Compliance Code	unknow
ECCN code	3A991.B.2.A
Maximum access time	3.8 ns
Maximum clock frequency (fCLK)	150 MHz
I/O type	COMMON
JESD-30 code	R-PQFP-G100
JESD-609 code	e0
length	20 mm
memory density	18874368 bi
Memory IC Type	STANDARD SRAM
memory width	18
Number of functions	1
Number of terminals	100
word count	1048576 words
character code	1000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	1MX18
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	LQFP
Encapsulate equivalent code	QFP100,.63X.87
Package shape	RECTANGULAR
Package form	FLATPACK, LOW PROFILE
Parallel/Serial	PARALLEL
power supply	3.3 V
Certification status	Not Qualified
Maximum seat height	1.7 mm
Maximum standby current	0.01 A
Minimum standby current	3.14 V
Maximum slew rate	0.39 mA
Maximum supply voltage (Vsup)	3.465 V
Minimum supply voltage (Vsup)	3.135 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.65 mm
Terminal location	QUAD
width	14 mm

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TC55VD1618FF-150 Related Products

	TC55VD1618FF-150	TC55VD1618FF-167	TC55VD1618FF-133
Description	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Is it Rohs certified?	incompatible	incompatible	incompatible
Maker	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor
Parts packaging code	QFP	QFP	QFP
package instruction	LQFP, QFP100,.63X.87	LQFP, QFP100,.63X.87	LQFP, QFP100,.63X.87
Contacts	100	100	100
Reach Compliance Code	unknow	unknow	unknow
ECCN code	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
Maximum access time	3.8 ns	3.6 ns	4.2 ns
Maximum clock frequency (fCLK)	150 MHz	167 MHz	133 MHz
I/O type	COMMON	COMMON	COMMON
JESD-30 code	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100
JESD-609 code	e0	e0	e0
length	20 mm	20 mm	20 mm
memory density	18874368 bi	18874368 bi	18874368 bi
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	18	18	18
Number of functions	1	1	1
Number of terminals	100	100	100
word count	1048576 words	1048576 words	1048576 words
character code	1000000	1000000	1000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C
organize	1MX18	1MX18	1MX18
Output characteristics	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	LQFP	LQFP	LQFP
Encapsulate equivalent code	QFP100,.63X.87	QFP100,.63X.87	QFP100,.63X.87
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL
power supply	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.7 mm	1.7 mm	1.7 mm
Maximum standby current	0.01 A	0.01 A	0.01 A
Minimum standby current	3.14 V	3.14 V	3.14 V
Maximum slew rate	0.39 mA	0.41 mA	0.37 mA
Maximum supply voltage (Vsup)	3.465 V	3.465 V	3.465 V
Minimum supply voltage (Vsup)	3.135 V	3.135 V	3.135 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES
technology	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING	GULL WING
Terminal pitch	0.65 mm	0.65 mm	0.65 mm
Terminal location	QUAD	QUAD	QUAD
width	14 mm	14 mm	14 mm

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