ES3A, ES3B, ES3C, ES3D
www.vishay.com
Vishay General Semiconductor
Surface Mount Ultrafast Plastic Rectifier
FEATURES
• Glass passivated pellet chip junction
• Ideal for automated placement
• Ultrafast recovery times for high efficiency
• Low forward voltage, low power losses
Available
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
SMC (DO-214AB)
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
J
max.
Package
Diode variations
3.0 A
50 V, 100 V, 150 V, 200 V
100 A
20 ns
0.90 V
150 °C
SMC (DO-214AB)
Single
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, and telecommunication.
MECHANICAL DATA
Case:
SMC (DO-214AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, commercial
grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS compliant, and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals:
matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2
whisker test
Polarity:
color band denotes cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
L
= 100 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
SYMBOL
ES3A
EA
50
35
50
ES3B
EB
100
70
100
3.0
100
-55 to +150
ES3C
EC
150
105
150
ES3D
ED
200
140
200
V
V
V
A
A
°C
UNIT
Revision: 21-Jul-17
Document Number: 88589
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ES3A, ES3B, ES3C, ES3D
www.vishay.com
Vishay General Semiconductor
TEST CONDITIONS
SYMBOL
V
F (1)
T
A
= 25 °C
T
A
= 100 °C
I
R
t
rr
t
rr
Q
rr
C
J
ES3A
ES3B
ES3C
ES3D
UNIT
V
μA
ns
ns
nC
pF
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous
forward voltage
Maximum DC reverse current at
rated DC blocking voltage
Maximum reverse recovery time
Maximum reverse recovery time
Maximum stored charge
Typical junction capacitance
3.0 A
0.90
10
500
20
30
50
15
35
45
I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
I
F
= 3.0 A, V
R
= 30 V,
dI/dt = 50 A/μs, I
rr
= 10 % I
RM
I
F
= 3.0 A, V
R
= 30 V,
dI/dt = 50 A/μs, I
rr
= 10 % I
RM
4.0 V, 1 MHz
T
J
= 25 °C
T
J
= 100 °C
T
J
= 25 °C
T
J
= 100 °C
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
R
θJA
(1)
R
θJL
(1)
ES3A
ES3B
47
12
ES3C
ES3D
UNIT
°C/W
(1)
Note
Units mounted on PCB with 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pad areas
ORDERING INFORMATION
(Example)
PREFERRED P/N
ES3D-E3/57T
ES3D-E3/9AT
ES3DHE3_A/H
(1)
ES3DHE3_A/I
ES3D-M3/57T
ES3D-M3/9AT
ES3DHM3_A/H
(1)
(1)
UNIT WEIGHT (g)
0.211
0.211
0.211
0.211
0.211
0.211
0.211
0.211
PREFERRED PACKAGE CODE
57T
9AT
H
I
57T
9AT
H
I
BASE QUANTITY
850
3500
850
3500
850
3500
850
3500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
ES3DHM3_A/I
(1)
(1)
Note
AEC-Q101 qualified
Revision: 21-Jul-17
Document Number: 88589
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ES3A, ES3B, ES3C, ES3D
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
3.0
10 000
Average Forward Rectified Current (A)
Instantaneous Reverse Leakage
Current (µA)
T
J
= 150 °C
1000
T
J
= 125 °C
T
J
= 100 °C
100
2.0
10
1.0
Resistive or Inductive Load
P.C.B. Mounted on
0.31" x 0.31" (8.0 mm x 8.0 mm)
Copper Pad Areas
0
80
90
100
110
120
130
140
150
1
T
J
= 25 °C
0.1
0
20
40
60
80
100
Lead Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics
150
50
8.3 ms Single Half Sine-Wave
at T
L
= 100 °C
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
Peak Forward Surge Current (A)
Junction Capacitance (pF)
125
40
100
30
75
20
50
25
10
0
1
10
100
0
0.1
1
10
100
Number of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 5 - Typical Junction Capacitance
100
Instantaneous Forward Current (A)
T
J
= 150 °C
10
T
J
= 125 °C
1
T
J
= 100 °C
0.1
T
J
= 25 °C
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Revision: 21-Jul-17
Document Number: 88589
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ES3A, ES3B, ES3C, ES3D
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
SMC
(DO-214AB)
Cathode Band
Mounting Pad Layout
0.185 (4.69) MAX.
0.126 (3.20)
0.114 (2.90)
0.246 (6.22)
0.220 (5.59)
0.126 (3.20) MIN.
0.280 (7.11)
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
Vishay General Semiconductor
0.060 (1.52) MIN.
0.320 (8.13) REF.
Revision: 21-Jul-17
Document Number: 88589
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000