ZTX657 datasheet, PDF - EEWORLD Datasheet

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ZTX657: DescriptionBipolar Transistors - BJT NPN Super E-Line; Categorysemiconductor Discrete semiconductor; File Size72KB，2 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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ZTX657 Overview

Bipolar Transistors - BJT NPN Super E-Line

ZTX657 Parametric

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	Diodes
Product Category	Bipolar Transistors - BJT
RoHS	Details
Mounting Style	Through Hole
Package / Case	TO-92-3
Transistor Polarity	NPN
Configuration	Single
Collector- Emitter Voltage VCEO Max	300 V
Collector- Base Voltage VCBO	300 V
Emitter- Base Voltage VEBO	5 V
Collector-Emitter Saturation Voltage	500 mV
Maximum DC Collector Current	500 mA
Gain Bandwidth Product fT	30 MHz
Maximum Operating Temperature	+ 200 C
DC Current Gain hFE Max	50 at 100 mA at 5 V
Height	4.01 mm
Length	4.77 mm
Packaging	Bulk
Width	2.41 mm
Continuous Collector Current	0.5 A
DC Collector/Base Gain hfe Min	50 at 100 mA at 5 V, 40 at 10 mA at 5 V
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	1 W
Factory Pack Quantity	4000
Unit Weight	0.016000 oz

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NPN SILICON PLANAR MEDIUM POWER

HIGH VOLTAGE TRANSISTORS

ISSUE 2 JULY 94

FEATURES

* 300 Volt V

CEO

* 0.5 Amp continuous current

* P

tot

=1 Watt

ZTX656

ZTX657

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature

Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

ZTX656

200

5

1

0.5

1

E-Line

TO92 Compatible

ZTX657

300

UNIT

V

A

W

°C

-55 to +200

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Emitter Cut-Off

Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Base-Emitter

Turn-On Voltage

Static Forward

Current Transfer

Ratio

Transition

Frequency

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

f

T

50

40

30

ZTX656

MIN.

200

5

100

0.5

1

50

40

30

MHz

300

5

100

0.5

1

ZTX657

MAX.

MAX. MIN.

UNIT

V

nA

V

CONDITIONS.

I

C

=100

µ

A, I

E

=0

I

C

=10mA, I

B

=0*

I

E

=100

µ

A, I

C

=0

V

CB

=160V, I

E

=0

V

CB

=200V, I

E

=0

V

EB

=3V, I

C

=0

I

C

=100mA, I

B

=10mA*

I

C

=100mA, I

B

=10mA*

IC=100mA, V

CE

=5V*

I

C

=100mA, V

CE

=5V

I

C

=10mA, V

CE

=5V

I

C

=10mA, V

CE

=20V

f=20MHz

3-227

ZTX657 Related Products

	ZTX657
Description	Bipolar Transistors - BJT NPN Super E-Line
Product Attribute	Attribute Value
Manufacturer	Diodes
Product Category	Bipolar Transistors - BJT
RoHS	Details
Mounting Style	Through Hole
Package / Case	TO-92-3
Transistor Polarity	NPN
Configuration	Single
Collector- Emitter Voltage VCEO Max	300 V
Collector- Base Voltage VCBO	300 V
Emitter- Base Voltage VEBO	5 V
Collector-Emitter Saturation Voltage	500 mV
Maximum DC Collector Current	500 mA
Gain Bandwidth Product fT	30 MHz
Maximum Operating Temperature	+ 200 C
DC Current Gain hFE Max	50 at 100 mA at 5 V
Height	4.01 mm
Length	4.77 mm
Packaging	Bulk
Width	2.41 mm
Continuous Collector Current	0.5 A
DC Collector/Base Gain hfe Min	50 at 100 mA at 5 V, 40 at 10 mA at 5 V
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	1 W
Factory Pack Quantity	4000
Unit Weight	0.016000 oz

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