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IRFR9024NPBF

Description
MOSFET 1 P-CH -55V HEXFET 175mOhms 12.7nC
CategoryDiscrete semiconductor    The transistor   
File Size1MB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IRFR9024NPBF Overview

MOSFET 1 P-CH -55V HEXFET 175mOhms 12.7nC

IRFR9024NPBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionLEAD FREE, DPAK-3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time20 weeks
Samacsys Confidence4
Samacsys StatusReleased
Samacsys PartID520930
Samacsys Pin Count3
Samacsys Part CategoryTransistor
Samacsys Package CategoryOther
Samacsys Footprint NameD-PAK(TO-252AA)
Samacsys Released Date2017-06-17 09:15:14
Is SamacsysN
Other featuresAVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)62 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage55 V
Maximum drain current (Abs) (ID)11 A
Maximum drain current (ID)11 A
Maximum drain-source on-resistance0.175 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252AA
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)38 W
Maximum pulsed drain current (IDM)44 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrier
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PD - 95015A
IRFR9024NPbF
IRFU9024NPbF
Lead-Free
www.irf.com
1
12/14/04

IRFR9024NPBF Related Products

IRFR9024NPBF 102A0.229T IRFR9024NTRRPBF CSC12A05121BFDA
Description MOSFET 1 P-CH -55V HEXFET 175mOhms 12.7nC Fixed Resistor, Wire Wound MOSFET 1 P-CH -55V HEXFET 175mOhms 12.7nC Array/Network Resistor, Dual Terminator, Metal Glaze/thick Film, 0.2W, 180ohm, 100V, 1% +/-Tol, -100,100ppm/Cel,
Reach Compliance Code not_compliant unknown not_compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Number of terminals 2 2 2 12
Is it Rohs certified? conform to - conform to incompatible
JESD-609 code e3 - e3 e0
Maximum operating temperature 150 °C - 150 °C 125 °C
Package form SMALL OUTLINE - SMALL OUTLINE SIP
Terminal surface Matte Tin (Sn) - with Nickel (Ni) barrier - Matte Tin (Sn) - with Nickel (Ni) barrier Tin/Lead (Sn/Pb)
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