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BSM75GB170DN2

Description
IGBT Modules N-CH 1.7KV 110A
Categorysemiconductor    Discrete semiconductor   
File Size245KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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BSM75GB170DN2 Overview

IGBT Modules N-CH 1.7KV 110A

BSM75GB170DN2 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerInfineon
Product CategoryIGBT Modules
ProductIGBT Silicon Modules
ConfigurationDual
Collector- Emitter Voltage VCEO Max1700 V
Continuous Collector Current at 25 C110 A
Package / Case32 mm
Maximum Operating Temperature+ 150 C
Height30.5 mm
Length94 mm
Width34 mm
Mounting StyleScrew
Maximum Gate Emitter Voltage+/- 20 V
Minimum Operating Temperature- 40 C
Factory Pack Quantity10
Unit Weight8.818490 oz
BSM 75 GB 170 DN2
IGBT Power Module
• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
• R
G on,min
= 22 Ohm
Type
BSM 75 GB 170 DN2
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
GE
= 20 kΩ
Gate-emitter voltage
DC collector current
T
C
= 25 °C
T
C
= 80 °C
Pulsed collector current,
t
p
= 1 ms
T
C
= 25 °C
T
C
= 80 °C
Power dissipation per IGBT
T
C
= 25 °C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage,
t
= 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
T
j
T
stg
R
thJC
R
thJCD
V
is
-
-
-
-
P
tot
625
+ 150
-40 ... + 125
0.2
0.63
4000
16
11
F
40 / 125 / 56
sec
Vac
mm
K/W
°C
I
Cpuls
220
150
W
V
GE
I
C
110
75
Symbol
V
CE
V
CGR
1700
± 20
A
Values
1700
Unit
V
V
CE
I
C
Package
HALF-BRIDGE 1
Ordering Code
C67070-A2702-A67
1700V 110A
1
Oct-27-1997

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Description IGBT Modules N-CH 1.7KV 110A IGBT 1700V 110A 625W MODULE
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