VS-20L15TSPbF
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 20 A
FEATURES
Base
cathode
2
• 125 °C T
J
operation (V
R
< 5 V)
• Single diode configuration
• Optimized for OR-ing applications
• Ultralow forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
• High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical strength and
moisture resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
TO-263AB (D
2
PAK)
1
N/C
3
Anode
PRODUCT SUMMARY
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
E
AS
Package
Diode variation
20 A
15 V
0.33 V
600 mA at 100 °C
125 °C
10 mJ
TO-263AB (D
2
PAK)
Single die
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
The Schottky rectifier module has been optimized for ultra
low forward voltage drop specifically for the OR-ing of
parallel power supplies. The proprietary barrier technology
allows for reliable operation up to 125 °C junction
temperature. Typical applications are in parallel switching
power supplies, converters, reverse battery protection, and
redundant power subsystems.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
19 A
pk
, T
J
= 125 °C (typical)
Range
CHARACTERISTICS
Rectangular waveform
VALUES
20
15
700
0.25
-55 to +125
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
TEST CONDITIONS
T
J
= 100 °C
VS-20L15TSPbF
15
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 85 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 2 A, L = 6 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated load
condition and with rated
V
RRM
applied
VALUES
20
700
330
10
2
mJ
A
A
UNITS
Maximum peak one cycle non-repetitive
surge current
See fig. 7
Non-repetitive avalanche energy
Repetitive avalanche current
Revision: 24-Jul-14
Document Number: 94166
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20L15TSPbF
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
19 A
Forward voltage drop
See fig. 1
V
FM (1)
40 A
19 A
40 A
Reverse leakage current
See fig. 2
Threshold voltage
Forward slope resistance
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
I
RM (1)
V
F(TO)
r
t
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 100 °C
T
J
= T
J
maximum
V
R
= 5 V
DC
, (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
-
8
10 000
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
TYP.
-
-
0.25
0.37
-
-
0.182
7.6
2000
-
MAX.
0.41
0.52
0.33
0.50
10
600
mA
V
m
pF
nH
V/μs
V
UNITS
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction
temperature range
Maximum storage
temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Maximum thermal resistance,
junction to ambient
Approximate weight
minimum
maximum
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
R
thJA
DC operation
See fig. 4
Mounting surface, smooth and greased
(For TO-220)
DC operation
TEST CONDITIONS
VALUES
-55 to +125
°C
-55 to +150
1.5
0.50
40
2
0.07
Non-lubricated threads
Case style D
2
PAK
6 (5)
12 (10)
20L15TS
g
oz.
kgf
cm
(lbf
in)
°C/W
UNITS
Mounting torque
Marking device
Revision: 24-Jul-14
Document Number: 94166
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20L15TSPbF
www.vishay.com
Vishay Semiconductors
1000
I
F
- Instantaneous Forward Current (A)
1000
I
R
- Reverse Current (mA)
T
J
= 100 °C
100
100
T
J
= 75 °C
T
J
= 50 °C
10
10
T
J
= 125 °C
T
J
= 75 °C
T
J
= 25 °C
T
J
= 25 °C
1
1
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
3
6
9
12
15
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
10 000
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
1000
100
0
5
10
15
20
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
P
DM
0.1
Single pulse
(themal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
1
10
100
0.01
0.00001
0.0001
0.001
0.01
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 24-Jul-14
Document Number: 94166
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20L15TSPbF
www.vishay.com
Vishay Semiconductors
14
Allowable Case Temperature (°C)
100
95
90
Average Power Loss (W)
12
10
8
6
4
2
0
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
Square wave (D = 0.50)
85
80
75
RMS limit
See note (1)
70
DC
0
4
8
12
16
20
24
0
5
10
15
20
25
30
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
I
FSM
- Non-Repetitive Surge Current (A)
1000
At any rated load condition
and with rated V
RRM
applied
following surge
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
Freewheel
diode
40HFL40S02
+ V
d
= 25 V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
Revision: 24-Jul-14
Document Number: 94166
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20L15TSPbF
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
20
L
15
T
S
TRL PbF
1
1
2
3
4
5
6
7
-
-
-
-
-
-
-
2
3
4
5
6
7
8
Vishay
Semiconductors
product
Current rating (20 A)
L = Low V
F
Voltage rating (15 = 15 V)
T =
Schottky series
S
= D
2
PAK
None = tube
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
8
-
PbF = lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-20L15TSPbF
VS-20L15TSTRLPbF
VS-20L15TSTRRPbF
VS-20L15T-1PbF
QUANTITY PER T/R
50
800
800
50
MINIMUM ORDER QUANTITY
1000
800
800
1000
PACKAGING DESCRIPTION
Antistatic plastic tubes
13" diameter reel
13" diameter reel
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?95014
www.vishay.com/doc?95008
www.vishay.com/doc?95032
Revision: 24-Jul-14
Document Number: 94166
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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