SemiWell
Semiconductor
BT137F-600
UL : E228720
Symbol
○
Bi-Directional Triode Thyristor
Features
Repetitive Peak Off-State Voltage : 600V
◆
R.M.S On-State Current ( I
T(RMS)
= 8 A )
◆
High Commutation dv/dt
◆
Isolation Voltage ( V
ISO
= 1500V AC )
◆
2.T2
▼
▲
○
3.Gate
1.T1
○
TO-220F
General Description
This device is fully isolated package suitable for AC switching
application, phase control application such as fan speed and
temperature modulation control, lighting control and static
switching relay.
This device is approved to comply with applicable require-
ments by Underwriters Laboratories Inc.
1
2
3
Absolute Maximum Ratings
Symbol
V
DRM
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GM
V
GM
V
ISO
T
J
T
STG
( T
J
= 25°C unless otherwise specified )
Condition
Ratings
600
T
C
= 76 °C
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
t =10ms
8.0
70/77
24
5.0
Over any 20ms period
0.5
2.0
10
A.C. 1 minute
1500
- 40 ~ 125
- 40 ~ 150
2.0
Parameter
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
I
2
t
for fusing
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Isolation Breakdown Voltage(R.M.S.)
Operating Junction Temperature
Storage Temperature
Mass
Units
V
A
A
A
2
s
W
W
A
V
V
°C
°C
g
Jan, 2004. Rev. 0
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
1/6
BT137F-600
Electrical Characteristics
Symbol
Items
Repetitive Peak Off-State
Current
Peak On-State Voltage
Ⅰ
Ⅱ
Ⅲ
Ⅰ
Ⅱ
Ⅲ
Non-Trigger Gate Voltage
Critical Rate of Rise Off-State
Voltage at Commutation
Holding Current
Thermal Impedance
Junction to case
T
J
= 125 °C, V
D
= 1/2 V
DRM
T
J
= 125 °C, [di/dt]c = -3.0 A/ms,
V
D
=2/3 V
DRM
Gate Trigger Voltage
V
D
= 6 V, R
L
=10
Ω
Gate Trigger Current
V
D
= 6 V, R
L
=10
Ω
Conditions
V
D
= V
DRM
, Single Phase, Half Wave
T
J
= 125 °C
I
T
= 10 A, Inst. Measurement
Ratings
Min.
─
─
─
─
─
─
─
─
0.2
5.0
─
─
Typ.
─
─
─
─
─
─
─
─
─
─
10
─
Max.
1.0
1.6
25
25
25
1.5
1.5
1.5
─
─
─
3.8
Unit
I
DRM
V
TM
I
+GT1
I
-GT1
I
-GT3
V
+GT1
V
-GT1
V
-GT3
V
GD
(dv/dt)c
I
H
R
th(j-c)
mA
V
mA
V
V
V/㎲
mA
°C/W
2/6
BT137F-600
Fig 1. Gate Characteristics
10
2
Fig 2. On-State Voltage
10
1
V
GM
(10V)
On-State Current [A]
P
GM
(5W)
Gate Voltage [V]
P
G(AV)
(0.5W)
25
℃
I
GM
(2A)
10
0
10
1
T
J
= 125 C
o
T
J
= 25 C
10
0
o
V
GD
(0.2V)
10
-1
10
1
10
2
10
3
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Gate Current [mA]
On-State Voltage [V]
Fig 3. On State Current vs.
Maximum Power Dissipation
12
11
10
Fig 4. On State Current vs.
Allowable Case Temperature
o
π
θ
360°
θ
2
π
Allowable Case Temperature [
o
C]
Power Dissipation [W]
9
8
7
6
5
4
3
2
1
0
0
1
θ
= 180
o
θ
= 150
o
θ
= 120
θ
= 90
θ
= 60
θ
= 30
o
130
120
110
θ
: Conduction Angle
o
o
θ
= 30
100
o
π
90
θ
2
π
θ
= 60
o
o
o
o
θ
360°
θ
= 90
θ
= 120
80
θ
: Conduction Angle
θ
= 150
o
θ
= 180
5
6
7
8
9
10
2
3
4
5
6
7
8
9
10
70
0
1
2
3
4
RMS On-State Current [A]
RMS On-State Current [A]
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
90
80
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
10
Surge On-State Current [A]
70
60
50
40
30
20
10
0
0
10
60Hz
V
GT
(25 C)
V
GT
(t C)
o
o
1
50Hz
10
1
10
2
0.1
-50
0
50
100
o
150
Time (cycles)
Junction Temperature [ C]
3/6
BT137F-600
Fig 7. Gate Trigger Current vs.
Junction Temperature
10
10
Fig 8. Transient Thermal Impedance
1
I
I
+
GT1
_
GT1
I
_
GT3
Transient Thermal Impedance [ C/W]
I
GT
(25 C)
I
GT
(t C)
o
o
o
1
0.1
-50
0
50
100
o
150
10
-2
10
-1
10
0
10
1
10
2
Junction Temperature [ C]
Time (sec)
Fig 9. Gate Trigger Characteristics Test Circuit
10Ω
10Ω
10Ω
▼
▲
6V
●
▼
▲
A
●
▼
▲
A
●
6V
6V
A
V
●
R
G
V
●
R
G
V
●
R
G
Test Procedure
Ⅰ
Test Procedure
Ⅱ
Test Procedure
Ⅲ
4/6
BT137F-600
TO-220F Package Dimension
mm
Typ.
Inch
Typ.
Dim.
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
Min.
10.4
6.18
9.55
13.47
6.05
1.26
3.17
1.87
2.57
Max.
10.6
6.44
9.81
13.73
6.15
1.36
3.43
2.13
2.83
Min.
0.409
0.243
0.376
0.530
0.238
0.050
0.125
0.074
0.101
Max.
0.417
0.254
0.386
0.540
0.242
0.054
0.135
0.084
0.111
2.54
5.08
2.51
1.25
0.45
0.6
3.7
3.2
1.5
2.62
1.55
0.63
1.0
0.099
0.049
0.018
0.024
0.100
0.200
0.103
0.061
0.025
0.039
0.146
0.126
0.059
φ
φ
1
φ
2
F
B
A
E
H
I
φ
φ
1
φ
2
C
L
1
D
2
3
J
K
M
G
1. T1
2. T2
3. Gate
N
O
5/6
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