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GLS29SF020-55-4C-WHE

Description
Flash Memory 256K x 8 55 ns
Categorystorage    storage   
File Size1MB,27 Pages
ManufacturerGreenliant
Environmental Compliance
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GLS29SF020-55-4C-WHE Overview

Flash Memory 256K x 8 55 ns

GLS29SF020-55-4C-WHE Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionTSSOP, TSSOP32,.56,20
Reach Compliance Codecompliant
Maximum access time55 ns
command user interfaceNO
Data pollingYES
JESD-30 codeR-PDSO-G32
memory density2097152 bit
Memory IC TypeFLASH
memory width8
Number of departments/size2K
Number of terminals32
word count262144 words
character code256000
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX8
Package body materialPLASTIC/EPOXY
encapsulated codeTSSOP
Encapsulate equivalent codeTSSOP32,.56,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Programming voltage5 V
Certification statusNot Qualified
Department size128
Maximum standby current0.0001 A
Maximum slew rate0.03 mA
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitYES
typeNOR TYPE
Base Number Matches1
2 Mbit / 4 Mbit (x8) Small-Sector Flash
GLS29SF020 / GLS29SF040
GLS29VF020 / GLS29VF040
GLS29SF/VF020 / 0402Mb / 4Mb (x8)
Byte-Program, Small-Sector flash memories
Data Sheet
FEATURES:
• Organized as 256K x8 / 512K x8
• Single Voltage Read and Write Operations
– 4.5-5.5V for GLS29SF020/040
– 2.7-3.6V for GLS29VF020/040
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption:
– Active Current: 10 mA (typical)
– Standby Current:
30 µA (typical) for GLS29SF020/040
1 µA (typical) for GLS29VF020/040
• Sector-Erase Capability
– Uniform 128 Byte sectors
• Fast Read Access Time:
– 55 ns for GLS29SF020/040
– 70 ns for GLS29VF020/040
• Latched Address and Data
• Fast Erase and Byte-Program:
– Sector-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Byte-Program Time: 14 µs (typical)
– Chip Rewrite Time:
4 seconds (typical) for GLS29SF/VF020
8 seconds (typical) for GLS29SF/VF040
• Automatic Write Timing
– Internal V
PP
Generation
• End-of-Write Detection
– Toggle Bit
– Data# Polling
• TTL I/O Compatibility for GLS29SF020/040
• CMOS I/O Compatibility for GLS29VF020/040
• JEDEC Standard
– Flash EEPROM Pinouts and command sets
• Packages Available
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm)
• All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The GLS29SF020/040 and GLS29VF020/040 are 256K
x8 / 512K x8 CMOS Small-Sector Flash (SSF) manufac-
tured with high-performance SuperFlash technology. The
split-gate cell design and thick-oxide tunneling injector
attain better reliability and manufacturability compared with
alternate approaches. The GLS29SF020/040 devices
write (Program or Erase) with a 4.5-5.5V power supply.
The GLS29VF020/040 devices write (Program or Erase)
with a 2.7-3.6V power supply. These devices conform to
JEDEC standard pin assignments for x8 memories.
Featuring high performance Byte-Program, the
GLS29SF020/040 and GLS29VF020/040 devices pro-
vide a maximum Byte-Program time of 20 µsec. To protect
against inadvertent write, they have on-chip hardware and
Software Data Protection schemes. Designed, manufac-
tured, and tested for a wide spectrum of applications, these
devices are offered with a guaranteed endurance of at
least 10,000 cycles. Data retention is rated at greater than
100 years.
The GLS29SF020/040 and GLS29VF020/040 devices
are suited for applications that require convenient and eco-
nomical updating of program, configuration, or data mem-
ory. For all system applications, they significantly improve
performance and reliability, while lowering power consump-
tion. They inherently use less energy during Erase and
Program than alternative flash technologies. The total
energy consumed is a function of the applied voltage, cur-
rent, and time of application. Since for any given voltage
range, the SuperFlash technology uses less current to pro-
gram and has a shorter erase time, the total energy con-
sumed during any Erase or Program operation is less than
alternative flash technologies. They also improve flexibility
while lowering the cost for program, data, and configuration
storage applications.
The SuperFlash technology provides fixed Erase and Pro-
gram times independent of the number of Erase/Program
cycles that have occurred. Therefore, the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase
and Program times increase with accumulated Erase/Pro-
gram cycles.
©2010 Greenliant Systems, Ltd.
www.greenliant.com
S71160-15-00005/10

GLS29SF020-55-4C-WHE Related Products

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Description Flash Memory 256K x 8 55 ns NOR Flash 4M (512Kx8) 55ns Industrial Temp NOR Flash 512K X 8 70ns NOR Flash 4M (512Kx8) 70ns Industrial Temp NOR Flash 512K X 8 70ns NOR Flash 512K X 8 55ns NOR Flash 512K x 8 70ns INDUSTRIAL TEMP NOR Flash 512K X 8 55ns Flash, 256KX8, 55ns, PDSO32,
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to conform to conform to
package instruction TSSOP, TSSOP32,.56,20 QCCJ, LDCC32,.5X.6 QCCJ, LDCC32,.5X.6 TSSOP, TSSOP32,.56,20 TSSOP, TSSOP32,.56,20 TSSOP, TSSOP32,.56,20 QCCJ, LDCC32,.5X.6 QCCJ, LDCC32,.5X.6 TSSOP, TSSOP32,.56,20
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant compliant
Maximum access time 55 ns 55 ns 70 ns 70 ns 70 ns 55 ns 70 ns 55 ns 55 ns
Data polling YES YES YES YES YES YES YES YES YES
JESD-30 code R-PDSO-G32 R-PQCC-J32 R-PQCC-J32 R-PDSO-G32 R-PDSO-G32 R-PDSO-G32 R-PQCC-J32 R-PQCC-J32 R-PDSO-G32
memory density 2097152 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit 2097152 bit
Memory IC Type FLASH FLASH FLASH FLASH FLASH FLASH FLASH FLASH FLASH
memory width 8 8 8 8 8 8 8 8 8
Number of departments/size 2K 4K 4K 4K 4K 4K 4K 4K 2K
Number of terminals 32 32 32 32 32 32 32 32 32
word count 262144 words 524288 words 524288 words 524288 words 524288 words 524288 words 524288 words 524288 words 262144 words
character code 256000 512000 512000 512000 512000 512000 512000 512000 256000
Maximum operating temperature 70 °C 85 °C 70 °C 85 °C 70 °C 70 °C 85 °C 70 °C 85 °C
organize 256KX8 512KX8 512KX8 512KX8 512KX8 512KX8 512KX8 512KX8 256KX8
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TSSOP QCCJ QCCJ TSSOP TSSOP TSSOP QCCJ QCCJ TSSOP
Encapsulate equivalent code TSSOP32,.56,20 LDCC32,.5X.6 LDCC32,.5X.6 TSSOP32,.56,20 TSSOP32,.56,20 TSSOP32,.56,20 LDCC32,.5X.6 LDCC32,.5X.6 TSSOP32,.56,20
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE, SHRINK PITCH CHIP CARRIER CHIP CARRIER SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH CHIP CARRIER CHIP CARRIER SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
power supply 5 V 5 V 3/3.3 V 3/3.3 V 3/3.3 V 5 V 3/3.3 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Department size 128 128 128 128 128 128 128 128 128
Maximum standby current 0.0001 A 0.0001 A 0.00003 A 0.00003 A 0.00003 A 0.0001 A 0.00003 A 0.0001 A 0.0001 A
Maximum slew rate 0.03 mA 0.03 mA 0.03 mA 0.03 mA 0.03 mA 0.03 mA 0.03 mA 0.03 mA 0.03 mA
surface mount YES YES YES YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL INDUSTRIAL COMMERCIAL INDUSTRIAL COMMERCIAL COMMERCIAL INDUSTRIAL COMMERCIAL INDUSTRIAL
Terminal form GULL WING J BEND J BEND GULL WING GULL WING GULL WING J BEND J BEND GULL WING
Terminal pitch 0.5 mm 1.27 mm 1.27 mm 0.5 mm 0.5 mm 0.5 mm 1.27 mm 1.27 mm 0.5 mm
Terminal location DUAL QUAD QUAD DUAL DUAL DUAL QUAD QUAD DUAL
switch bit YES YES YES YES YES YES YES YES YES
type NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE
Is it lead-free? Lead free Lead free - - Lead free Lead free - - Lead free
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED - - NOT SPECIFIED NOT SPECIFIED - - NOT SPECIFIED
Programming voltage 5 V 5 V - - 5 V 5 V - - 5 V
Nominal supply voltage (Vsup) 5 V 5 V - - - 5 V - 5 V 5 V
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED - - NOT SPECIFIED NOT SPECIFIED - - NOT SPECIFIED
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