Super323™ SOT323 PNP SILICON POWER
™
(SWITCHING) TRANSISTOR
ISSUE 1 - SEPTEMBER 1998
FEATURES
ZUMT720
*
*
*
*
*
500mW POWER DISSIPATION
1A Peak Pulse Current
Excellent H
FE
Characteristics Up To 1A (pulsed)
Low Saturation Voltage
Low Equivalent On Resistance;
R
CE(sat)
APPLICATIONS
*
Boost functions in DC-DC converters
*
Motor driver functions
DEVICE TYPE
ZUMT720
COMPLEMENT
ZUMT619
PARTMARKING
T73
240m
R
CE(sat)
at 750mA
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current**
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C*
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
VALUE
-40
-40
-5
-1
-0.75
-200
385 †
500 ‡
-55 to +150
UNIT
V
V
V
A
A
mA
mW
Operating and Storage Temperature T
j
:T
stg
Range
°C
† Recommended P
tot
calculated using FR4 measuring 10 x 8 x 0.6mm (still air).
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
size25x25x0.6mm and using comparable measurement methods adopted by other suppliers.
ZUMT720
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
-50
-90
-140
-180
MIN.
-40
-40
-5
-10
-10
-10
-65
-120
-200
-250
TYP.
MAX. UNIT
V
V
V
nA
nA
nA
mV
mV
mV
mV
CONDITIONS.
I
C
=-100µA
I
C
= -10mA*
I
E
= -100µA
V
CB
=-35V
V
EB
=-4V
V
CES
=-35V
I
C
= -0.1A, I
B
= -10mA*
I
C
= -0.25A, I
B
=-20mA*
I
C
= -0.5A, I
B
=-50mA*
I
C
= -0.75A, I
B
=-100mA*
I
C
= -0.75A, I
B
= -100mA*
I
C
= -0.75A, V
CE
= -2V*
I
C
= -10mA, V
CE
=-2V*
I
C
= -0.1A, V
CE
= -2V*
I
C
= -0.5A, V
CE
=-2V*
I
C
= -0.75A, V
CE
= -2V*
I
C
= -1A, V
CE
= -2V*
MHz
pF
ns
ns
I
C
= -50mA, V
CE
=-10V
f= 100MHz
V
CB
= -10V, f=1MHz
V
CC
= -10V, I
C
=-0.75A
I
B1
=I
B2
=-100mA
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
Ratio
V
BE(sat)
V
BE(on)
h
FE
300
300
90
40
20
-1000 -1100 mV
-890
510
450
190
60
30
220
8
75
315
-1100 mV
Transition
Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
f
T
C
obo
t
(on)
t
(off)
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
RF/Wirelessly
京公网安备 11010802033920号
EEWORLD
