APTGF15A120T1G
Phase leg
NPT IGBT Power Module
5
Q1
7
8
Q2
CR2
9
10
1
2
12
3
4
NTC
6
11
V
CES
= 1200V
I
C
= 15A @ Tc = 80°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Non Punch Through (NPT) Fast IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
Very low stray inductance
- Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
CR1
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
Symbol
V
CES
I
C
I
CM
V
GE
P
D
RBSOA
Parameter
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
j
= 125°C
Max ratings
1200
25
15
60
±20
140
30A@1150V
Unit
V
APTGF15A120T1G – Rev 1 October, 2012
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–7
APTGF15A120T1G
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
I
CES
V
CE(sat)
V
GE(th)
I
GES
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
T
d(on)
T
r
T
d(off)
T
f
T
d(on)
T
r
T
d(off)
T
f
E
on
E
off
Zero Gate Voltage Collector Current
Collector Emitter Saturation Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Test Conditions
V
GE
= 0V
V
CE
= 1200V
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
V
GE
=15V
I
C
= 15A
T
j
= 125°C
V
GE
= V
CE
, I
C
= 1mA
V
GE
= 20V, V
CE
= 0V
Test Conditions
V
GE
= 0V
V
CE
= 25V
f = 1MHz
V
GE
= 15V
V
Bus
= 600V
I
C
=15A
Inductive Switching (25°C)
V
GE
= 15V
V
Bus
= 600V
I
C
= 15A
R
G
= 33
Inductive Switching (125°C)
V
GE
= 15V
V
Bus
= 600V
I
C
= 15A
R
G
= 33
V
GE
= 15V
T
j
= 125°C
V
Bus
= 600V
I
C
= 15A
T
j
= 125°C
R
G
= 33
Min
Typ
Max
250
500
3.7
6
400
Typ
1000
150
70
99
10
70
60
50
315
30
60
50
356
40
2
mJ
1
Max
Unit
µA
V
V
nA
Unit
pF
2.5
4
3.2
4.0
Dynamic Characteristics
Min
nC
ns
ns
Reverse diode ratings and characteristics
Symbol Characteristic
V
RRM
I
RM
I
F
V
F
Maximum Peak Repetitive Reverse Voltage
Test Conditions
T
j
= 25°C
T
j
= 125°C
Tc = 80°C
I
F
= 15A
I
F
= 30A
I
F
= 15A
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
Min
1200
Typ
Max
100
500
Unit
V
µA
A
V
APTGF15A120T1G – Rev 1 October, 2012
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
V
R
=1200V
15
2.8
3.4
2.4
240
290
260
960
3.3
t
rr
Q
rr
Reverse Recovery Time
Reverse Recovery Charge
I
F
= 15A
V
R
= 800V
di/dt =200A/µs
ns
nC
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2–7
APTGF15A120T1G
Thermal and package characteristics
Symbol Characteristic
R
thJC
V
ISOL
T
J
T
STG
T
C
Torque
Wt
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Min
IGBT
Diode
4000
-40
-40
-40
2
Typ
Max
0.9
2
150
125
100
3
80
Unit
°C/W
V
°C
N.m
g
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M4
Temperature sensor NTC
(see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R
25
Resistance @ 25°C
B
25/85
T
25
= 298.15 K
R
T
½
R
25
1
1
R
T
: Thermistor value at T
exp
B
25 / 85
T
25
T
T: Thermistor temperature
Min
Typ
50
3952
Max
Unit
k
K
SP1 Package outline
(dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
www.microsemi.com
3–7
APTGF15A120T1G – Rev 1 October, 2012
APTGF15A120T1G
Typical Performance Curve
50
Ic, Collector Current (A)
40
30
20
10
0
0
2
3
4
5
6
7
V
CE
, Collector to Emitter Voltage (V)
Transfer Characteristics
V
GE
, Gate to Emitter Voltage (V)
250µs Pulse Test
< 0.5% Duty cycle
Output characteristics (V
GE
=15V)
Ic, Collector Current (A)
250µs Pulse Test
< 0.5% Duty cycle
T
J
=25°C
T
J
=125°C
12
10
8
6
4
2
0
Output Characteristics (V
GE
=10V)
250µs Pulse Test
< 0.5% Duty cycle
T
J
=25°C
T
J
=125°C
1
8
0
0.5
1
1.5
2
2.5
3
3.5
V
CE
, Collector to Emitter Voltage (V)
Gate Charge
I
C
= 15A
T
J
= 25°C
V
CE
=240V
V
CE
=600V
50
Ic, Collector Current (A)
18
16
14
12
10
8
6
4
2
0
0
40
30
20
10
0
0
V
CE
=960V
T
J
=125°C
T
J
=25°C
2.5
5
7.5
10
12.5
V
GE
, Gate to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
T
J
= 125°C
250µs Pulse Test
< 0.5% Duty cycle
15
20
40
60
80
100
120
Gate Charge (nC)
On state Voltage vs Junction Temperature
Ic=30A
Ic=15A
V
CE
, Collector to Emitter Voltage (V)
V
CE
, Collector to Emitter Voltage (V)
9
8
7
6
5
4
3
2
1
0
9
6
5
4
3
Ic=30A
Ic=15A
Ic=7.5A
2
1
0
25
50
75
100
T
J
, Junction Temperature (°C)
125
250µs Pulse Test
< 0.5% Duty cycle
V
GE
= 15V
Ic=7.5A
10
11
12
13
14
15
16
V
GE
, Gate to Emitter Voltage (V)
Breakdown Voltage vs Junction Temp.
Collector to Emitter Breakdown Voltage
(Normalized)
1.10
Ic, DC Collector Current (A)
25
20
15
10
5
0
DC Collector Current vs Case Temperature
1.00
0.95
0.90
25
50
75
100
125
T
J
, Junction Temperature (°C)
25
50
75
100
125
T
C
, Case Temperature (°C)
150
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4–7
APTGF15A120T1G – Rev 1 October, 2012
1.05
APTGF15A120T1G
Turn-On Delay Time vs Collector Current
V
CE
= 600V
R
G
= 33Ω
Turn-Off Delay Time vs Collector Current
td(off), Turn-Off Delay Time (ns)
td(on), Turn-On Delay Time (ns)
75
70
65
60
55
50
0
5
10
15
20
25
30
35
I
CE
, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
160
V
CE
= 600V
R
G
= 33Ω
400
V
GE
=15V,
T
J
=125°C
350
V
GE
= 15V
300
V
GE
=15V,
T
J
=25°C
250
V
CE
= 600V
R
G
= 33Ω
200
0
10
15
20
25
30
I
CE
, Collector to Emitter Current (A)
Current Fall Time vs Collector Current
50
45
T
J
= 125°C
5
35
tr, Rise Time (ns)
tf, Fall Time (ns)
120
40
35
30
25
T
J
= 25°C
80
V
GE
=15V
40
V
CE
= 600V, V
GE
= 15V, R
G
= 33Ω
0
0
5
10
15
20
25
30
35
I
CE
, Collector to Emitter Current (A)
Turn-On Energy Loss vs Collector Current
V
CE
= 600V
R
G
= 33Ω
20
0
5
10
15
20
25
30
I
CE
, Collector to Emitter Current (A)
35
Eon, Turn-On Energy Loss (mJ)
Eoff, Turn-off Energy Loss (mJ)
8
7
6
5
4
3
2
1
0
0
Turn-Off Energy Loss vs Collector Current
2.5
2
1.5
1
0.5
0
0
5
10
15
20
25
30
I
CE
, Collector to Emitter Current (A)
Reverse Bias Safe Operating Area
35
30
35
T
J
= 25°C
V
CE
= 600V
V
GE
= 15V
R
G
= 33Ω
T
J
= 125°C
T
J
=125°C,
V
GE
=15V
T
J
=25°C,
V
GE
=15V
5
10
15
20
25
30
I
CE
, Collector to Emitter Current (A)
35
Switching Energy Losses (mJ)
8
7
6
5
4
3
2
1
0
Switching Energy Losses vs Gate Resistance
V
CE
= 600V
V
GE
= 15V
T
J
= 125°C
Eon, 15A
I
C
, Collector Current (A)
20
15
10
5
0
Eoff, 15A
0
20
40
60
80
100
120
0
400
800
1200
Gate Resistance (Ohms)
V
CE
, Collector to Emitter Voltage (V)
www.microsemi.com
5–7
APTGF15A120T1G – Rev 1 October, 2012
25
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