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ZTX789ASTOB

Description
Bipolar Transistors - BJT PNP Super E-Line
Categorysemiconductor    Discrete semiconductor   
File Size78KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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ZTX789ASTOB Overview

Bipolar Transistors - BJT PNP Super E-Line

ZTX789ASTOB Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerDiodes
Product CategoryBipolar Transistors - BJT
RoHSDetails
Mounting StyleThrough Hole
Package / CaseTO-92-3
Transistor PolarityPNP
ConfigurationSingle
Collector- Emitter Voltage VCEO Max- 25 V
Collector- Base Voltage VCBO- 25 V
Emitter- Base Voltage VEBO- 5 V
Collector-Emitter Saturation Voltage- 0.5 V
Maximum DC Collector Current3 A
Gain Bandwidth Product fT100 MHz
Maximum Operating Temperature+ 150 C
DC Current Gain hFE Max300 at 10 mA at 2 V
Height4.01 mm
Length4.77 mm
PackagingBulk
Width2.41 mm
Continuous Collector Current- 3 A
Minimum Operating Temperature- 55 C
Pd - Power Dissipation1000 mW
Factory Pack Quantity4000
Unit Weight0.016000 oz
PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 2 – APRIL 94
FEATURES
* 25 Volt V
CEO
* Gain of 200 at I
C
=2 Amps
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Battery powered circuits
* Motor drivers
ZTX789A
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Practical Power Dissipation*
Power Dissipation
at T
amb
=25°C
derate above 25°C
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
totp
P
tot
T
j
:T
stg
-25
-25
-5
-8
-3
1.5
1
5.7
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
A
A
W
W
mW/°C
°C
Operating and Storage Temperature Range
-55 to +200
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
300
250
200
100
3-276
-0.8
800
MIN.
-25
-25
-5
-0.1
-0.1
-0.25
-0.45
-0.5
-1.0
TYP.
MAX.
UNIT
V
V
V
µ
A
µ
A
CONDITIONS.
I
C
=-100
µ
A
I
C
=-10mA*
I
E
=-100
µ
A
V
CB
=-15V
V
EB
=-4V
I
C
=-1A, I
B
=-10mA*
I
C
=-2A, I
B
=-20mA*
I
C
=-3A, I
B
=-100mA*
I
C
=-1A, I
B
=-10mA*
IC=-1A, V
CE
=-2V*
I
C
=-10mA, V
CE
=-2V
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-6A, V
CE
=-2V*
V
V
V
V
V

ZTX789ASTOB Related Products

ZTX789ASTOB
Description Bipolar Transistors - BJT PNP Super E-Line
Product Attribute Attribute Value
Manufacturer Diodes
Product Category Bipolar Transistors - BJT
RoHS Details
Mounting Style Through Hole
Package / Case TO-92-3
Transistor Polarity PNP
Configuration Single
Collector- Emitter Voltage VCEO Max - 25 V
Collector- Base Voltage VCBO - 25 V
Emitter- Base Voltage VEBO - 5 V
Collector-Emitter Saturation Voltage - 0.5 V
Maximum DC Collector Current 3 A
Gain Bandwidth Product fT 100 MHz
Maximum Operating Temperature + 150 C
DC Current Gain hFE Max 300 at 10 mA at 2 V
Height 4.01 mm
Length 4.77 mm
Packaging Bulk
Width 2.41 mm
Continuous Collector Current - 3 A
Minimum Operating Temperature - 55 C
Pd - Power Dissipation 1000 mW
Factory Pack Quantity 4000
Unit Weight 0.016000 oz

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