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BUK9604-40A118

Description
MOSFET TAPE13 MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size763KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BUK9604-40A118 Overview

MOSFET TAPE13 MOSFET

BUK9604-40A118 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerNXP
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-263-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage40 V
Id - Continuous Drain Current198 A
Rds On - Drain-Source Resistance4 mOhms
Vgs - Gate-Source Voltage15 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
ConfigurationSingle
Channel ModeEnhancement
PackagingReel
Height4.5 mm
Length10.3 mm
Transistor Type1 N-Channel
Width9.4 mm
Fall Time306 ns
Pd - Power Dissipation300 W
Rise Time309 ns
Factory Pack Quantity800
Typical Turn-Off Delay Time365 ns
Typical Turn-On Delay Time62 ns
BUK9604-40A
N-channel TrenchMOS logic level FET
Rev. 2 — 7 February 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V loads
Automotive and general purpose
power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
j
25 °C; T
j
175 °C
V
GS
= 5 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
[1]
Min
-
-
-
Typ
-
-
-
Max Unit
40
75
300
V
A
W
Static characteristics
R
DSon
V
GS
= 4.3 V; I
D
= 25 A;
T
j
= 25 °C
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C
V
GS
= 5 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 11;
see
Figure 12
-
-
-
3.7
2.9
3.5
5.9
4
4.4
mΩ
mΩ
mΩ
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