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IPI22N03S4L-15

Description
MOSFET N-Ch 30V 22A I2PAK-3 OptiMOS-T2
CategoryDiscrete semiconductor    The transistor   
File Size186KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IPI22N03S4L-15 Overview

MOSFET N-Ch 30V 22A I2PAK-3 OptiMOS-T2

IPI22N03S4L-15 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeTO-262AA
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
Is SamacsysN
Other featuresULTRA LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)20 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)22 A
Maximum drain current (ID)22 A
Maximum drain-source on-resistance0.0149 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-262AA
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)31 W
Maximum pulsed drain current (IDM)88 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1
IPB22N03S4L-15
IPI22N03S4L-15, IPP22N03S4L-15
OptiMOS
®
-T2
Power-Transistor
Product Summary
V
DS
R
DS(on),max
(SMD version)
I
D
30
14.6
22
PG-TO262-3-1
V
mΩ
A
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
PG-TO263-3-2
PG-TO220-3-1
Type
IPB22N03S4L-15
IPI22N03S4L-15
IPP22N03S4L-15
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4N03L15
4N03L15
4N03L15
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
1)
Symbol
I
D
Conditions
T
C
=25 °C,
V
GS
=10 V
T
C
=100 °C,
V
GS
=10 V
2)
Pulsed drain current
2)
Avalanche energy, single pulse
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
I
AS
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
T
C
=25 °C
I
D
=22 A
T
C
=25 °C
Value
22
22
88
20
22
±16
31
-55 ... +175
55/175/56
mJ
A
V
W
°C
Unit
A
Rev. 2.0
page 1
2007-03-09
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