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IPU50R3K0CEAKMA1

Description
MOSFET CONSUMER
Categorysemiconductor    Discrete semiconductor   
File Size2MB,14 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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IPU50R3K0CEAKMA1 Overview

MOSFET CONSUMER

IPU50R3K0CEAKMA1 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerInfineon
Product CategoryMOSFET
RoHSDetails
TechnologySi
Package / CaseTO-251-3
Vds - Drain-Source Breakdown Voltage500 V
PackagingTube
Height6.22 mm
Length6.73 mm
Width2.38 mm
Factory Pack Quantity1500
Unit Weight0.139332 oz
IPD50R3K0CE,IPU50R3K0CE
MOSFET
500VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
DPAK
tab
IPAK
tab
1
2
1
3
2 3
Drain
Pin 2
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Gate
Pin 1
Source
Pin 3
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended
Table1KeyPerformanceParameters
Parameter
V
DS
@ T
j,max
R
DS(on),max
I
D
Q
g.typ
I
D,pulse
E
oss
@400V
Type/OrderingCode
IPD50R3K0CE
IPU50R3K0CE
Value
550
3
2.6
4.3
4.1
0.49
Package
PG-TO 252
PG-TO 251
Unit
V
A
nC
A
µJ
Marking
50S3K0CE
RelatedLinks
see Appendix A
Final Data Sheet
1
Rev.2.3,2016-06-13

IPU50R3K0CEAKMA1 Related Products

IPU50R3K0CEAKMA1 IPU50R3K0CEBKMA1
Description MOSFET CONSUMER MOSFET N-Ch 500V 1.7A IPAK-3
Product Attribute Attribute Value Attribute Value
Manufacturer Infineon Infineon
Product Category MOSFET MOSFET
RoHS Details Details
Technology Si Si
Package / Case TO-251-3 TO-251-3
Vds - Drain-Source Breakdown Voltage 500 V 500 V
Packaging Tube Tube
Height 6.22 mm 6.22 mm
Length 6.73 mm 6.73 mm
Width 2.38 mm 2.38 mm
Factory Pack Quantity 1500 1500
Unit Weight 0.139332 oz 0.012102 oz
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