The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
TO-247
• Low Forward Voltage Drop
• Ultra Low Leakage Current
• Low Tail Current
• RBSOA and SCSOA Rated
• High Freq. Switching to 20KHz
G
C
C
E
G
E
MAXIMUM RATINGS (IGBT)
Symbol
V
CES
V
CGR
V
GE
I
C1
I
C2
I
CM
I
LM
E
AS
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (R
GE
= 20KΩ)
Gate Emitter Voltage
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 105°C
Pulsed Collector Current
1
All Ratings: T
C
= 25°C unless otherwise specified.
APT33GF120BR
UNIT
1200
1200
±20
52
33
Amps
Volts
@ T
C
= 25°C
104
66
65
297
-55 to 150
300
°C
RBSOA Clamped Inductive Load Current @ R
G
= 11Ω T
C
= 125 °C
Single Pule Avalanche Energy
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
2
m
J
Watts
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
Symbol
BV
CES
V
GE
(TH)
V
CE
(ON)
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 0.5mA)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 700µA, T
j
= 25°C)
MIN
TYP
MAX
UNIT
1200
4.5
5.5
2.7
3.3
6.5
3.2
3.9
0.5
3-2003
052-6206 Rev D
Volts
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 25A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 25A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25°C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 125°C)
Gate-Emitter Leakage Current (V
GE
= ±20V, V
CE
= 0V)
I
CES
I
GES
5.0
±100
mA
nA
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS (IGBT)
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d
(on)
t
r
t
d
(off)
t
f
t
d
(on)
t
r
t
d
(off)
t
f
E
on
E
off
E
ts
t
d
(on)
t
r
t
d
(off)
t
f
E
ts
gfe
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
APT33GF120BR
Test Conditions
Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CC
= 0.5V
CES
I
C
= I
C2
Resistive Switching (25°C)
V
GE
= 15V
V
CC
= 0.8V
CES
I
C
= I
C2
R
G
=10Ω
MIN
TYP
MAX
UNIT
1855
230
110
170
19
100
24
85
170
125
25
ns
nC
pF
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance
Inductive Switching (150°C)
V
CLAMP
(Peak) = 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10Ω
T
J
= +150°C
60
210
74
2.8
2.8
5.6
ns
mJ
Inductive Switching (25°C)
V
CLAMP
(Peak) = 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10Ω
T
J
= +25°C
V
CE
= 20V, I
C
= 25A
27
65
190
70
5.2
8.5
20
mJ
S
ns
THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)
Symbol
R
ΘJC
R
ΘJA
W
T
Characteristic
Junction to Case
Junction to Ambient
MIN
TYP
MAX
UNIT
°C/W
0.42
40
0.22
oz
gm
Package Weight
5.90
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
I
C
= I
C2
, V
CC
= 50V, R
GE
= 25
Ω
, L = 120µH, T
j
= 25°C
See MIL-STD-750 Method 3471
3-2003
052-6206 Rev D
2
3
APT Reserves the right to change, without notice, the specifications and information contained herein.
60
I
C
, COLLECTOR CURRENT (AMPERES)
V
GE
=17, 15 & 13V
40
11V
I
C
, COLLECTOR CURRENT (AMPERES)
12V
60
APT33GF120BR
12V
V
GE
=17, 15 & 13V
11V
40
10V
20
9V
8V
7V
0
4
8
12
16
20
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 2, Typical Output Characteristics (T
J
= 150°C)
100
OPERATION
0
10V
20
9V
8V
7V
0
0
4
8
12
16
20
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 1, Typical Output Characteristics (T
J
= 25°C)
80
I
C
, COLLECTOR CURRENT (AMPERES)
I
C
, COLLECTOR CURRENT (AMPERES)
250µSec. Pulse Test
V
GE
= 15V
LIMITED
BY
VCE (SAT)
60
T
C
=-55°C
T
C
=+25°C
T
C
=+150°C
100µs
10
40
1ms
T
C
=+25°C
T
J
=+150°C
SINGLE PULSE
1
1
10
100
1200
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 4, Maximum Forward Safe Operating Area
10ms
20
0
2
4
6
8
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 3, Typical Output Characteristics @ V
GE
= 15V
V
GE
, GATE-TO-EMITTER VOLTAGE (VOLTS)
0
3,000
C
ies
1,000
C, CAPACITANCE (pF)
f = 1MHz
20
I
C
= I
C2
T
J
= +25°C
16
V
CE
=240V
12
V
CE
=600V
V
CE
=960V
8
C
oes
100
C
res
4
10
.01
0.1
1.0
10
50
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage
0.5
Z
θ
JC
, THERMAL IMPEDANCE (°C/W)
50
100
150
200
250
Q
g
, TOTAL GATE CHARGE (nC)
Figure 6, Gate Charges vs Gate-To-Emitter Voltage
0
0
D=0.5
0.1
0.05
0.2
0.1
0.05
PDM
0.02
0.01
0.01
0.005
Note:
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x Z
θJC
+ TC
SINGLE PULSE
0.001
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
052-6206 Rev D
3-2003
APT33GF120BR
5.0
I
C
, COLLECTOR CURRENT (AMPERES)
V
CE
(SAT), COLLECTOR-TO-EMITTER
SATURATION VOLTAGE (VOLTS)
60
4.0
I
C1
2.0
I
C2
0.5 I
C2
1.5
40
20
BV
CES
, COLLECTOR-TO-EMITTER BREAKDOWN
VOLTAGE (NORMALIZED)
-50 -25
0
25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Figure 8, Typical V
CE
(SAT) Voltage vs Junction Temperature
1.2
SWITCHING ENERGY LOSSES (mJ)
1.0
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
Figure 9, Maximum Collector Current vs Case Temperature
16
V
CC
= 0.66 V
CES
V
GE
= +15V
T
J
= +25°C
I
C
= I
C2
0
25
1.1
12
1
8
E
off
0.9
4
E
on
0.8
-50 -25
0
25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Figure 10, Breakdown Voltage vs Junction Temperature
20
I
C1
1
0.7
20
40
60
80
100
R
G
, GATE RESISTANCE (OHMS)
Figure 11, Typical Switching Energy Losses vs Gate Resistance
4
SWITCHING ENERGY LOSSES (mJ)
V
CC
= 0.66 V
CES
V
GE
= +15V
T
J
= +125°C
R
G
= 10
Ω
0
0
TOTAL SWITCHING ENERGY LOSSES (mJ)
3
I
C2
2
0.5 I
C2
V
CC
= 0.66 V
CES
V
GE
= +15V
R
G
= 10
Ω
E
off
1
E
on
0
-50 -25
0
25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Figure 12, Typical Switching Energy Losses vs. Junction Temperature
100
I
C
, COLLECTOR CURRENT (AMPERES)
0.1
10
20
30
40
I
C
, COLLECTOR CURRENT (AMPERES)
Figure 13, Typical Switching Energy Losses vs Collector Current
For Both:
Duty Cycle = 50%
T
J
= +125°C
T
sink
= +90°C
Gate drive as specified
Power dissapation = 83W
I
LOAD
= I
RMS
of fundamental
0
10
052-6206 Rev D
3-2003
1
0.1
1.0
10
F, FREQUENCY (KHz)
Figure 14,Typical Load Current vs Frequency
100
1000
APT33GF120BR
V
CHARGE
*DRIVER SAME TYPE AS D.U.T.
V
CC
= 0.66 V
CES
E
t s
= E
on
+ E
off
90%
B
10%
t
d
(on)
V
C
90%
D.U.T.
V
CE
(SAT)
10%
t
f
E
on
t=2us
E
off
I
C
t
d
(off)
90%
A
DRIVER*
D.U.T.
I
C
100uH
V
CLAMP
R
G
A
V
C
B
A
V
C
I
C
10%
t
r
Figure 15, Switching Loss Test Circuit and Waveforms
2
V
CE
(off)
90%
V
GE
(on)
V
CC
R
L
=
2
.5 V
CES
I
C2
D.U.T.
10%
1
V
GE
(off)
t
d
(on)
t
r
t
d
(off)
t
f
From
Gate Drive
Circuitry
R
G
V
CE
(on)
1
Figure 16, Resistive Switching Time Test Circuit and Waveforms
T0-247 Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
6.15 (.242) BSC
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
Collector
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Gate
Collector
Emitter
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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