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BUK7109-75ATE118

Description
MOSFET TRENCHPLUS MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size216KB,16 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BUK7109-75ATE118 Overview

MOSFET TRENCHPLUS MOSFET

BUK7109-75ATE118 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerNXP
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-263-5
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage75 V
Id - Continuous Drain Current120 A
Rds On - Drain-Source Resistance9 mOhms
Vgs - Gate-Source Voltage20 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
ConfigurationSingle
Channel ModeEnhancement
PackagingCut Tape
PackagingMouseReel
PackagingReel
Height4.5 mm
Length10.3 mm
Transistor Type1 N-Channel
Width9.4 mm
Fall Time100 ns
Pd - Power Dissipation272 W
Rise Time108 ns
Factory Pack Quantity800
Typical Turn-Off Delay Time185 ns
Typical Turn-On Delay Time35 ns
BUK7109-75ATE
N-channel TrenchPLUS standard level FET
Rev. 02 — 10 February 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS diodes for
ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been
designed and qualified to the appropriate AEC standard for use in automotive critical
applications.
1.2 Features and benefits
Allows responsive temperature
monitoring due to integrated
temperature sensor
Electrostatically robust due to
integrated protection diodes
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for standard level gate drive
sources
1.3 Applications
Electrical Power Assisted Steering
(EPAS)
Variable Valve Timing for engines
1.4 Quick reference data
Table 1.
V
DS
R
DSon
Quick reference
Conditions
Min
-
-
Typ
-
8
Max
75
9
Unit
V
mΩ
drain-source voltage T
j
25 °C; T
j
175 °C
drain-source
on-state resistance
temperature sense
diode temperature
coefficient
temperature sense
diode forward
voltage
V
GS
= 10 V; I
D
= 50 A;
T
j
= 25 °C; see
Figure 7;
see
Figure 8
I
F
= 250 µA; T
j
-55 °C;
T
j
175 °C
I
F
= 250 µA; T
j
= 25 °C
Symbol Parameter
Static characteristics
S
F(TSD)
-1.4
-1.54
-1.68
mV/K
V
F(TSD)
648
658
668
mV
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