A Product Line of
Diodes Incorporated
ZXTC6719MC
DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION
Features and Benefits
NPN Transistor
•
BV
CEO
> 50V
•
I
C
= 4A Continuous Collector Current
•
Low Saturation Voltage (100mV max @ 1A)
•
R
SAT
= 68mΩ for a low equivalent On-Resistance
PNP Transistor
•
BV
CEO
> -40V
•
I
C
= -3A Continuous Collector Current
•
Low Saturation Voltage (-220mV max @ -1A)
•
R
SAT
= 104mΩ for a low equivalent On-Resistance
•
h
FE
characterized up to 6A for high current gain hold up
•
Low profile 0.8mm high package for thin applications
•
R
θJA
efficient, 40% lower than SOT26
2
•
6mm footprint, 50% smaller than TSOP6 and SOT26
•
Lead-Free, RoHS Compliant (Note 1)
•
Halogen and Antimony Free. “Green” Device (Note 2)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
•
•
•
•
•
•
Case: DFN3020B-8
Case material: Molded Plastic. “Green” Molding Compound.
Terminals: Pre-Plated NiPdAu leadframe.
Nominal package height: 0.8mm
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Weight: 0.013 grams (approximate)
Applications
•
•
•
•
•
•
DC – DC Converters
Charging circuits
Power switches
Motor control
CCFL Backlighting circuits
Portable applications
C1
DFN3020B-8
C2
C2
C2
C1
C1
B1
B2
C2
C1
E1
Top View
Bottom View
NPN Transistor
E2
PNP Transistor
Equivalent Circuit
E2
B2
E1
B1
Pin 1
Bottom View
Pin Out
Ordering Information
(Note 3)
Product
ZXTC6719MCTA
Notes:
Marking
DC3
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3000
1. No purposefully added lead.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For Packaging Details, go to our website at http://www.diodes.com.
Marking Information
DC3
DC3 = Product type Marking Code
Dot denotes Pin 1
ZXTC6719MC
Document number: DS31928 Rev. 3 - 2
1 of 9
www.diodes.com
January 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTC6719MC
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
(Notes 4 & 7)
(Notes 5 & 7)
Symbol
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
NPN
100
50
7
6
4
4.5
1
PNP
-50
-40
-7
-4
-3
-3.5
Unit
V
A
Thermal Characteristics
@ T
A
= 25°C unless otherwise specified
Characteristic
(Notes 4 & 7)
Power Dissipation
Linear Derating Factor
(Notes 5 & 7)
P
D
(Notes 6 & 7)
(Notes 6 & 8)
(Notes 4 & 7)
(Notes 5 & 7)
(Notes 6 & 7)
(Notes 6 & 8)
(Notes 7 & 9)
Symbol
NPN
1.5
12
2.45
19.6
1.13
8
1.7
13.6
83.3
51.0
111
73.5
17.1
-55 to +150
PNP
Unit
W
mW/°C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
Notes:
R
θ
JA
R
θ
JL
T
J
, T
STG
°C/W
°C
4. For a dual device surface mounted on 28mm x 28mm (8cm
2
) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector pads connected to each half.
5. Same as note (3), except the device is measured at t <5 sec.
6. Same as note (3), except the device is surface mounted on 31mm x 31mm (10cm
2
) FR4 PCB with high coverage of single sided 1oz copper.
7. For a dual device with one active die.
8. For dual device with 2 active die running at equal power.
9. Thermal resistance from junction to solder-point (at the end of the collector lead).
ZXTC6719MC
Document number: DS31928 Rev. 3 - 2
2 of 9
www.diodes.com
January 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTC6719MC
Thermal Characteristics
10
10
1
V
CE(SAT)
-I
C
Collector Current (A)
I
C
Collector Current (A)
DC
1s
Limited
100ms
10ms
8sqcm 2oz Cu
One active die
Single Pulse, T
amb
=25°C
1
DC
V
CE(SAT)
1s
100ms
10ms
1ms
100us
0.1
0.1
Limited
1ms
100us
8sqcm 2oz Cu
One active die
Single Pulse, T
amb
=25°C
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V
CE
Collector-Emitter Voltage (V)
-V
CE
Collector-Emitter Voltage (V)
NPN Safe Operating Area
2.0
One active die
PNP Safe Operating Area
Max Power Dissipation (W)
10sqcm 1oz Cu
Two active die
Thermal Resistance (°C/W)
80
8sqcm 2oz Cu
60
D=0.5
1.5
8sqcm 2oz Cu
One active die
10sqcm 1oz Cu
One active die
40
20
D=0.2
Single Pulse
D=0.05
D=0.1
1.0
0.5
0
100µ
1m
10m 100m
1
10
100
1k
0.0
0
25
50
75
100
125
150
Pulse Width (s)
Temperature (°C)
Transient Thermal Impedance
3.5
225
Derating Curve
Thermal Resistance (°C/W)
200
175
150
125
100
75
50
25
0
0.1
1
2oz Cu
Once active die
2oz Cu
Two active die
1oz Cu
One active die
1oz Cu
Two active die
P
D
Dissipation (W)
3.0
2.5
2.0
1.5
1.0
0.5
T
amb
=25°C
T
j max
=150°C
Continuous
2oz Cu
One active die
2oz Cu
Two active die
1oz Cu
One active die
1oz Cu
Two active die
0.0
100m
1
10
100
10
100
Board Cu Area (sqcm)
Board Cu Area (sqcm)
Power Dissipation v Board Area
Thermal Resistance v Board Area
ZXTC6719MC
Document number: DS31928 Rev. 3 - 2
3 of 9
www.diodes.com
January 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTC6719MC
NPN - Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 10)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Static Forward Current Transfer Ratio
(Note 10)
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
Min
100
50
7
-
-
-
200
300
200
100
-
-
-
-
-
-
-
-
-
-
100
-
-
Typ
190
65
8.2
-
-
-
400
450
400
225
40
10
145
70
115
225
270
0.94
1.00
12
165
170
750
Max
-
-
-
100
100
100
-
-
-
-
-
20
200
100
220
300
320
1.00
1.07
20
-
-
-
Unit
V
V
V
nA
nA
nA
Test Condition
I
C
= 100µA
I
C
= 10mA
I
E
= 100µA
V
CB
= 80V
V
EB
= 6V
V
CES
= 40V
I
C
= 10mA, V
CE
= 2V
I
C
= 200mA, V
CE
= 2V
I
C
= 1A, V
CE
= 2V
I
C
= 2A, V
CE
= 2V
I
C
= 6A, V
CE
= 2V
I
C
= 0.1A, I
B
= 10mA
I
C
= 1A, I
B
= 10mA
I
C
= 1A, I
B
= 50mA
I
C
= 2A, I
B
= 50mA
I
C
= 3A, I
B
= 100mA
I
C
= 4A, I
B
= 200mA
I
C
= 4A, V
CE
= 2V
I
C
= 4A, I
B
= 200mA
V
CB
= 10V. f = 1MHz
V
CE
= 10V, I
C
= 50mA,
f = 100MHz
V
CC
= 10V, I
C
= 1A
I
B1
= I
B2
= 10mA
h
FE
-
Collector-Emitter Saturation Voltage
(Note 10)
V
CE(sat)
mV
Base-Emitter Turn-On Voltage (Note 10)
Base-Emitter Saturation Voltage (Note 10)
Output Capacitance
Transition Frequency
Turn-on Time
Turn-off Time
Notes:
V
BE(on)
V
BE(sat)
C
obo
f
T
t
on
t
off
V
V
pF
MHz
ns
ns
10. Measured under pulsed conditions. Pulse width
≤
300µs. Duty cycle
≤
2%
ZXTC6719MC
Document number: DS31928 Rev. 3 - 2
4 of 9
www.diodes.com
January 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTC6719MC
NPN – Typical Electrical Characteristics
0.25
Tamb=25°C
I
C
/I
B
=50
0.20
V
CE(SAT)
(V)
V
CE(SAT)
(V)
100m
I
C
/I
B
=100
0.15
0.10
100°C
25°C
-55°C
10m
I
C
/I
B
=50
I
C
/I
B
=10
0.05
0.00
1m
1m
1m
I
C
Collector Current (A)
10m
100m
1
10
I
C
Collector Current (A)
10m
100m
1
10
V
CE(SAT)
v I
C
630
1.2
V
CE
=2V
100°C
V
CE(SAT)
v I
C
1.0
I
C
/I
B
=50
540
Typical Gain (h
FE
)
Normalised Gain
1.0
0.8
0.6
0.4
0.2
0.0
1m
10m
100m
1
-55°C
25°C
450
360
270
180
90
0
10
0.8
V
BE(SAT)
(V)
-55°C
0.6
25°C
100°C
0.4
1m
10m
100m
1
10
I
C
Collector Current (A)
I
C
Collector Current (A)
h
FE
v I
C
1.0
V
CE
=2V
V
BE(SAT)
v I
C
0.8
V
BE(ON)
(V)
-55°C
0.6
25°C
0.4
1m
10m
100°C
I
C
Collector Current (A)
100m
1
10
V
BE(ON)
v I
C
ZXTC6719MC
Document number: DS31928 Rev. 3 - 2
5 of 9
www.diodes.com
January 2011
© Diodes Incorporated
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