BDP947_BDP949_BDP953
Silicon NPN Transistors
•
For AF driver and output stages
•
High collector current
•
High current gain
•
Low collector-emitter saturation voltage
•
Complementary types: BDP948, BDP950,
BDP954 (PNP)
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
4
2
1
3
Type
BDP947
BDP949
BDP953
Marking
BDP947 1=B
BDP949 1=B
BDP953 1=B
2=C
2=C
2=C
Pin Configuration
3=E
3=E
3=E
4=C
4=C
4=C
-
-
-
-
-
-
Package
SOT223
SOT223
SOT223
1
2011-10-05
BDP947_BDP949_BDP953
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
DC Characteristics
Symbol
min.
Values
typ.
max.
Unit
Collector-emitter breakdown voltage
I
C
= 10 mA,
I
B
= 0 , BDP947
I
C
= 10 mA,
I
B
= 0 , BDP949
I
C
= 10 mA,
I
B
= 0 , BDP953
V
(BR)CEO
V
45
60
100
-
-
-
-
-
-
-
-
-
-
-
-
-
-
µA
-
-
-
-
-
0.1
20
100
nA
-
25
100
50
15
-
-
-
-
-
-
-
475
-
-
0.5
1.3
V
Collector-base breakdown voltage
I
C
= 100 µA,
I
E
= 0 , BDP947
I
C
= 100 µA,
I
E
= 0 , BDP949
I
C
= 0 ,
I
E
= 100 µA, BDP953
V
(BR)CBO
45
60
120
V
(BR)EBO
I
CBO
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
5
Collector-base cutoff current
V
CB
= 45 V,
I
E
= 0
V
CB
= 45 V,
I
E
= 0 ,
T
A
= 150 °C
Emitter-base cutoff current
V
EB
= 4 V,
I
C
= 0
I
EBO
h
FE
-
DC current gain
2)
I
C
= 10 mA,
V
CE
= 5 V
I
C
= 500 mA,
V
CE
= 1 V
I
C
= 2 A,
V
CE
= 2 V, BDP947, BDP949
I
C
= 2 A,
V
CE
= 2 V, BDP953
Collector-emitter saturation voltage
2)
I
C
= 2 A,
I
B
= 0.2 A
V
CEsat
V
BEsat
-
-
Base emitter saturation voltage
2)
I
C
= 2 A,
I
B
= 0.2 A
AC Characteristics
Transition frequency
I
C
= 50 mA,
V
CE
= 10 V,
f
= 100 MHz
f
T
C
cb
-
-
100
25
-
-
MHz
pF
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
1
For calculation of
R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2
Pulse
test: t < 300µs; D < 2%
3
2011-10-05
Embedded System
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