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BA679S-GS08

Description
PIN Diodes 30 Volt 9kohm
Categorysemiconductor    Discrete semiconductor   
File Size82KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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PIN Diodes 30 Volt 9kohm

BA679S-GS08 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerVishay
Product CategoryPIN Diodes
RoHSDetails
Vr - Reverse Voltage30 V
Maximum Diode Capacitance0.5 pF
Maximum Series Resistance @ Maximum IF50 Ohms
If - Forward Current50 mA
Vf - Forward Voltage1 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 125 C
Minimum Operating Frequency3 MHz
Maximum Operating Frequency3 GHz
Mounting StyleSMD/SMT
Package / CaseSOD-80
PackagingCut Tape
PackagingMouseReel
PackagingReel
ConfigurationSingle
Height1.5 mm
Length3.5 mm
Termination StyleSolder Pad
TypeAttenuator
Width1.5 mm
Carrier Life4 us
Factory Pack Quantity2500
Unit Weight0.001827 oz
BA679, BA679S
www.vishay.com
Vishay Semiconductors
RF PIN Diodes - Single in MiniMELF SOD-80
FEATURES
• Wide frequency range 10 MHz to 1 GHz
• AEC-Q101 qualified
• Material categorization:
For definitions of compliance
www.vishay.com/doc?99912
please
see
APPLICATIONS
• Current controlled
attenuators
HF
resistance
in
adjustable
MECHANICAL DATA
Case:
MiniMELF SOD-80
Weight:
approx. 31 mg
Cathode band color:
black
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
PARTS TABLE
PART
BA679
BA679S
TYPE
DIFFERENTIATION
z
r
> 5 k
z
r
> 9 k
ORDERING CODE
BA679-GS18 or BA679-GS08
BA679S-GS18 or BA679S-GS08
TYPE MARKING
-
-
INTERNAL
CONSTRUCTION
Single diode
Single diode
REMARKS
Tape and reel
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PART
Reverse voltage
Forward continuous current
TEST CONDITION
SYMBOL
V
R
I
F
VALUE
30
50
UNIT
V
mA
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
TEST CONDITION
on PC board
50 mm x 50 mm x 1.6 mm
SYMBOL
R
thJA
T
j
T
stg
VALUE
500
125
- 55 to + 150
UNIT
K/W
°C
°C
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Reverse current
Diode capacitance
Differential forward resistance
Reverse impedance
Minority carrier lifetime
TEST CONDITION
I
F
= 20 mA
V
R
= 30 V
f = 100 MHz, V
R
= 0 V
f = 100 MHz, I
F
= 1.5 mA
f = 100 MHz, V
R
= 0 V
I
F
= 10 mA, I
R
= 10 mA
BA679
BA679S
PART
SYMBOL
V
F
I
R
C
D
r
f
z
r
z
r
5
9
4
MIN.
TYP.
MAX.
1
0.05
0.5
50
UNIT
V
μA
pF
k
k
μs
Rev. 1.8, 16-May-12
Document Number: 85529
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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