DDTD114EC-7 datasheet, PDF - EEWORLD Datasheet

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DDTD (xxxx) C

NPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR

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Features

•

Epitaxial Planar Die Construction

Complementary PNP Types Available (DDTB)

Built-In Biasing Resistors, R1, R2

Lead, Halogen and Antimony Free, RoHS Compliant

"Green" Device (Notes 2 and 3)

Part Number

DDTD113EC

DDTD123EC

DDTD143EC

DDTD114EC

DDTD122JC

DDTD113ZC

DDTD123YC

DDTD133HC

DDTD123TC

DDTD143TC

DDTD114TC

DDTD114GC

R1 (NOM)

1K

2.2K

4.7K

10K

0.22K

1K

2.2K

3.3K

2.2K

4.7K

10K

0

R2 (NOM)

1K

2.2K

4.7K

10K

4.7K

10K

OPEN

10K

Marking

N60

N61

N62

N63

N64

N65

N66

N67

N69

N70

N71

N72

Mechanical Data

•

Case: SOT-23

Case Material: Molded Plastic, “Green” Molding Compound,

Note 3. UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020D

Terminal Connections: See Diagram

Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating) Solderable per MIL-STD-202, Method 208

Marking Information: See Table and Page 3

Ordering Information: See Page 3

Weight: 0.008 grams (approximate)

OUT

3

C

B

R1

R2

E

1

IN

Top View

2

GND(0)

Package Pin Out Configuration

Maximum Ratings

Supply Voltage, (3) to (2)

Input Voltage, (1) to (2)

@T

A

= 25°C unless otherwise specified

Symbol

V

CC

DDTD113EC

DDTD123EC

DDTD143EC

DDTD114EC

DDTD122JC

DDTD113ZC

DDTD123YC

DDTD133HC

DDTD123TC

DDTD143TC

DDTD114TC

DDTD114GC

All

Value

50

-10 to +10

-10 to +12

-10 to +30

-10 to +40

-5 to +5

-5 to +10

-5 to +12

-6 to +20

5

500

Unit

V

Characteristic

V

IN

V

Input Voltage, (2) to (1)

V

EBO(MAX)

I

C

V

mA

Output Current

Thermal Characteristics

Characteristic

Power Dissipation

Thermal Resistance, Junction to Ambient Air (Note 1)

Operating and Storage Temperature Range

Notes:

1.

2.

3.

Symbol

P

D

R

θ

JA

T

J

, T

STG

Value

200

625

-55 to +150

Unit

mW

°C/W

°C

Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.

No purposefully added lead. Halogen and Antimony Free.

Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date

Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb

2

O

3

Fire Retardants.

DDTD (xxxx) C

Document number: DS30384 Rev. 10 - 2

1 of 4

www.diodes.com

January 2009

DDTD (xxxx) C

Electrical Characteristics - R1, R2 Types

Characteristic

DDTD113EC

DDTD123EC

DDTD143EC

DDTD114EC

DDTD122JC

DDTD113ZC

DDTD123YC

DDTD133HC

DDTD113EC

DDTD123EC

DDTD143EC

DDTD114EC

DDTD122JC

DDTD113ZC

DDTD123YC

DDTD133HC

Output Voltage

DDTD113EC

DDTD123EC

DDTD143EC

DDTD114EC

DDTD122JC

DDTD113ZC

DDTD123YC

DDTD133HC

DDTD113EC

DDTD123EC

DDTD143EC

DDTD114EC

DDTD122JC

DDTD113ZC

DDTD123YC

DDTD133HC

@T

A

= 25°C unless otherwise specified

Min

0.5

0.3

Typ

Max

Unit

Test Condition

Symbol

V

l(OFF)

⎯

V

CC

= 5V, I

O

= 100μA

Input Voltage

V

l(ON)

⎯

3.0

2.0

0.3V

7.2

3.8

1.8

0.88

28

7.2

3.6

2.4

0.5

V

O(ON)

⎯

V

O

= 0.3V, I

O

= 20mA

V

O

= 0.3V, I

O

= 20mA

V

O

= 0.3V, I

O

= 20mA

V

O

= 0.3V, I

O

= 10mA

V

O

= 0.3V, I

O

= 30mA

V

O

= 0.3V, I

O

= 20mA

V

O

= 0.3V, I

O

= 20mA

V

O

= 0.3V, I

O

= 20mA

I

O

/I

l

= -50mA/-2.5mA

Input Current

I

l

⎯

mA

V

I

= 5V

Output Current

I

O(OFF)

DC Current Gain

G

l

Input Resistor Tolerance

Resistance Ratio Tolerance

Gain-Bandwidth Product*

ΔR

1

Δ(R

2

/R

1

)

f

T

⎯

33

39

47

56

47

56

-30

-20

⎯

μA

V

CC

= 50V, V

I

= 0V

⎯

V

O

= 5V, I

O

= 50mA

⎯

200

+30

+20

⎯

V = 10V, I

E

= 5mA,

MHz

CE

f = 100MHz

%

Electrical Characteristics - R1 Only, R2 Only Types

Characteristic

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

DDTD123TC

DDTD143TC

DDTD114TC

DDTD114GC

DDTD123TC

DDTD143TC

DDTD114TC

DDTD114GC

DDTD123TC

DDTD143TC

DDTD114TC

DDTD114GC

Symbol

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

V

CE(SAT)

h

FE

ΔR

1

or

ΔR

2

f

T

Min

50

40

5

⎯

300

⎯

100

56

-30

⎯

@T

A

= 25°C unless otherwise specified

Typ

⎯

250

⎯

200

Max

⎯

0.5

580

0.3

600

⎯

+30

⎯

Unit

Test Condition

V

I

C

= 50μA

V

I

C

= 1mA

I

E

= 50μA

I

E

= 50μA

V

I

E

= 50μA

I

E

= 720μA

μA

V

CB

= 50V

μA

V

⎯

%

V

EB

= 4V

I

C

= 50mA, I

B

= 2.5mA

I

C

= 50mA, V

CE

= 5V

Collector Cutoff Current

Emitter Cutoff Current

Collector-Emitter Saturation Voltage

DC Current Transfer Ratio

Bias Resistor Tolerance

Gain-Bandwidth Product*

* Transistor - For Reference Only

⎯

V

CE

= 10V, I

E

= -5mA,

MHz

f = 100MHz

DDTD (xxxx) C

Document number: DS30384 Rev. 10 - 2

2 of 4

www.diodes.com

January 2009

DDTD (xxxx) C

Ordering Information

Part Number

DDTD113EC-7-F

DDTD123EC-7-F

DDTD143EC-7-F

DDTD114EC-7-F

DDTD122JC-7-F

DDTD113ZC-7-F

DDTD123YC-7-F

DDTD133HC-7-F

DDTD123TC-7-F

DDTD143TC-7-F

DDTD114TC-7-F

DDTD114GC-7-F

Notes:

(Note 4)

Case

SOT-23

Packaging

3000/Tape & Reel

4. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

Nxx = Product Type Marking Code (See Page 1)

YM = Date Code Marking

Y = Year (ex: T = 2002)

M = Month (ex: 9 = September)

2008

V

Jun

6

2009

W

Jul

7

2010

X

Aug

8

2011

Y

Sep

9

2012

Z

2013

A

Oct

O

2014

B

Nov

N

2015

C

Dec

D

Nxx

Date Code Key

Year

Code

Month

Code

2002

N

Jan

1

2003

P

Feb

2

2004

R

Mar

3

2005

S

2006

T

Apr

4

Package Outline Dimensions

A

YM

2007

U

May

5

B C

H

K

D

J

F

G

L

M

K1

SOT-23

Dim

Min

Max

Typ

A

0.37

0.51

0.40

B

1.20

1.40

1.30

C

2.30

2.50

2.40

D

0.89

1.03 0.915

F

0.45

0.60 0.535

G

1.78

2.05

1.83

H

2.80

3.00

2.90

J

0.013 0.10

0.05

K

0.903 1.10

1.00

K1

-

0.400

L

0.45

0.61

0.55

M

0.085 0.18

0.11

0°

8°

-

α

All Dimensions in mm

Suggested Pad Layout

Y

Z

C

Dimensions Value (in mm)

Z

2.9

X

0.8

Y

0.9

C

2.0

E

1.35

X

E

DDTD (xxxx) C

Document number: DS30384 Rev. 10 - 2

3 of 4

www.diodes.com

January 2009

DDTD (xxxx) C

IMPORTANT NOTICE

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product

described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall

assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,

harmless against all damages.

LIFE SUPPORT

Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written

approval of the President of Diodes Incorporated.

DDTD (xxxx) C

Document number: DS30384 Rev. 10 - 2

4 of 4

www.diodes.com

January 2009

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	Diodes
Product Category	Bipolar Transistors - Pre-Biased
RoHS	N
Configuration	Single
Transistor Polarity	NPN
Typical Input Resistor	10 kOhms
Typical Resistor Ratio	1
Mounting Style	SMD/SMT
Package / Case	SOT-23-3
DC Collector/Base Gain hfe Min	56
Continuous Collector Current	500 mA
Peak DC Collector Current	500 mA
Maximum Operating Temperature	+ 150 C
Packaging	Cut Tape
Packaging	Reel
Height	1 mm
Length	3.05 mm
Width	1.4 mm
Minimum Operating Temperature	- 55 C
Factory Pack Quantity	3000
Unit Weight	0.000282 oz

	DDTD114EC-7	DDTD133HC-7	DDTD113ZC-7
Description	Bipolar Transistors - Pre-Biased 200MW 10KW 10KW	Bipolar Transistors - Pre-Biased 200MW 3.W 10KW	Bipolar Transistors - Pre-Biased 200MW 1KW 10KW
Product Attribute	Attribute Value	Attribute Value	Attribute Value
Manufacturer	Diodes	Diodes	Diodes
Product Category	Bipolar Transistors - Pre-Biased	Bipolar Transistors - Pre-Biased	Bipolar Transistors - Pre-Biased
RoHS	N	N	N
Configuration	Single	Single	Single
Transistor Polarity	NPN	NPN	NPN
Typical Input Resistor	10 kOhms	3.3 kOhms	1 kOhms
Typical Resistor Ratio	1	0.33	0.1
Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT
Package / Case	SOT-23-3	SOT-23-3	SOT-23-3
DC Collector/Base Gain hfe Min	56	56	56
Continuous Collector Current	500 mA	500 mA	500 mA
Peak DC Collector Current	500 mA	500 mA	500 mA
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Height	1 mm	1 mm	1 mm
Length	3.05 mm	3.05 mm	3.05 mm
Width	1.4 mm	1.4 mm	1.4 mm
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Factory Pack Quantity	3000	3000	3000
Unit Weight	0.000282 oz	0.000282 oz	0.000282 oz
Packaging	Reel	Reel	Reel

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