BSP20TA datasheet, PDF - EEWORLD Datasheet

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BSP20TA: DescriptionBipolar Transistors - BJT; Categorysemiconductor Discrete semiconductor; File Size42KB，1 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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Bipolar Transistors - BJT

BSP20TA Parametric

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	Diodes
Product Category	Bipolar Transistors - BJT
RoHS	N
Mounting Style	SMD/SMT
Package / Case	SOT-223-4
Transistor Polarity	NPN
Configuration	Single
Collector- Emitter Voltage VCEO Max	250 V
Collector- Base Voltage VCBO	300 V
Emitter- Base Voltage VEBO	5 V
Maximum DC Collector Current	0.5 A
Gain Bandwidth Product fT	200 MHz
Maximum Operating Temperature	+ 150 C
DC Current Gain hFE Max	40
Height	1.65 mm (Max)
Length	6.7 mm (Max)
Width	3.7 mm (Max)
DC Collector/Base Gain hfe Min	40 at 20 mA at 10 V, 30 at 30 mA at 10 V
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	2000 mW
Unit Weight	0.003951 oz

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SOT223 NPN SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

ISSUE 3 FEBRUARY 1996

FEATURES

* High V

CEO

* Low saturation voltage

COMPLEMENTARY TYPE

PARTMARKING DETAIL

7

C

BSP15

BSP20

E

C

B

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature

Range

PARAMETER

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

MIN.

300

250

5

20

50

0.5

1.3

2.0

40

30

40

200

6

MHz

pF

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

VALUE

300

250

5

1

0.5

2

-55 to +150

UNIT

V

A

W

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

TYP.

MAX.

UNIT

CONDITIONS.

I

C

=100

µ

A

I

C

=10mA*

I

E

=100

µ

A

V

CB

=300V

V

EB

=5V

I

C

=50mA, I

B

=4mA*

I

C

=50mA, I

B

=4mA*

I

C

=100mA, V

CE

=10V*

I

C

=20mA, V

CE

=10V*

I

C

=30mA, V

CE

=10V*

I

C

=10mA, V

CE

=20V

f = 20MHz

V

CB

=20V, f=1MHz

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Base-Emitter Turn-On

Voltage

V

nA

V

Emitter Cut-Off Current I

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

Static Forward Current h

FE

Transfer Ratio

Transition Frequency

Output Capacitance

f

T

C

obo

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%

For typical characteristics graphs see FMMTA42 datasheet.

3 - 61

BSP20TA Related Products

	BSP20TA
Description	Bipolar Transistors - BJT
Product Attribute	Attribute Value
Manufacturer	Diodes
Product Category	Bipolar Transistors - BJT
RoHS	N
Mounting Style	SMD/SMT
Package / Case	SOT-223-4
Transistor Polarity	NPN
Configuration	Single
Collector- Emitter Voltage VCEO Max	250 V
Collector- Base Voltage VCBO	300 V
Emitter- Base Voltage VEBO	5 V
Maximum DC Collector Current	0.5 A
Gain Bandwidth Product fT	200 MHz
Maximum Operating Temperature	+ 150 C
DC Current Gain hFE Max	40
Height	1.65 mm (Max)
Length	6.7 mm (Max)
Width	3.7 mm (Max)
DC Collector/Base Gain hfe Min	40 at 20 mA at 10 V, 30 at 30 mA at 10 V
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	2000 mW
Unit Weight	0.003951 oz

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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