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BAV99SH6327XTSA1

Description
Diodes - General Purpose, Power, Switching AF DIGITAL TRANSISTOR
CategoryDiscrete semiconductor    diode   
File Size167KB,13 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BAV99SH6327XTSA1 Overview

Diodes - General Purpose, Power, Switching AF DIGITAL TRANSISTOR

BAV99SH6327XTSA1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionR-PDSO-G6
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time6 weeks
Samacsys DescriptionDiodes - General Purpose, Power, Switching AF DIGITAL TRANSISTOR
Configuration2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G6
JESD-609 codee3
Humidity sensitivity level1
Number of components4
Number of terminals6
Maximum operating temperature150 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.25 W
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage85 V
Maximum reverse recovery time0.004 µs
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
BAV99...
Silicon Switching Diode
For high-speed switching applications
Series pair configuration
BAV99S / U: For orientation in reel see
package information below
Pb-free (RoHS compliant) package
1)
Qualified according AEC Q101
BAV99
BAV99W
!
BAV99S
BAV99U
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, !
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Type
BAV99
BAV99S
BAV99U
BAV99W
1
Pb-containing
Package
SOT23
SOT363
SC74
SOT323
Configuration
series
dual series
dual series
series
Marking
A7s
A7s
A7s
A7s
package may be available upon special request
1
2007-09-19
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