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BAT54S-T

Description
Schottky Diodes & Rectifiers .3A 30V
Categorysemiconductor    Discrete semiconductor   
File Size251KB,3 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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BAT54S-T Overview

Schottky Diodes & Rectifiers .3A 30V

BAT54S-T Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerMCC
Product CategorySchottky Diodes & Rectifiers
RoHSN
ProductSchottky Diodes
Mounting StyleSMD/SMT
Package / CaseSOT-23
If - Forward Current0.2 A
Vrrm - Repetitive Reverse Voltage30 V
Vf - Forward Voltage1 V
Ifsm - Forward Surge Current0.6 A
ConfigurationDual Series
TechnologySi
Ir - Reverse Current2 uA at 25 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 125 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Height0.8 mm (Max)
Length1.7 mm (Max)
Operating Temperature Range- 55 C to + 125 C
Width0.85 mm (Max)
Factory Pack Quantity3000
trr - Reverse Recovery time5 ns
Unit Weight0.000282 oz
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

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$ %    !"#
BAT54
THRU
BAT54S
Features
Lead Free Finish/Rohs Compliant ("P"Suffix designates
RoHS Compliant. See ordering information)
Low Forward Voltage
Surface Mount device
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Halogen
free available upon request by adding suffix "-HF"
MCC Catalog
Number
Device Marking
1
KL1
KL2
KL3
KL4
2
L4
/L4P
L42
L43
L44
Type
Single
Dual
Dual
Dual
Pin
Configuration
See page 3
Figure 1
Figure
2
Figure 3
Figure 4
F
200mWatt, 30Volt
Schottky Barrier Diode
SOT-23
A
D
BAT54
BAT54A
BAT54C
BAT54S
C
B
Maximum Ratings
Continuos Reverse Voltage
Forward ContinuousCurrent
Non-Repetitive Peak Forward Current t<1s
Total Power Dissipation @ T
A
= 25°C
Storage Temperature Range
Operating Junction Temperature Range
Soldering temperature during 10s
V
R
I
F
I
FSM
P
D
T
stg
T
j
T
j
30V
200mA
0.6A
200mW
-55°C to 150°C
-55°C to 125°C
260°C
G
E
H
J
K
DIMENSIONS
Electrical Characteristics @ 25
°C
Unless Otherwise Specified
Characteristics
Forward Voltage at
I
F
= 0.1mA
I
F
= 1mA
I
F
= 10mA
I
F
= 30mA
I
F
= 100mA
Reverse Current
Symbol
Max.
Notes
V
F
I
R
240mV
320mV
400mV
500mV
1000mV
2.0 uA
DIM
A
B
C
D
E
F
G
H
J
K
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MAX
.120
.104
.055
.041
.081
.024
.0039
.044
.007
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
V
R
= 25V
.035
.900
.031
.800
Capacitance
C
J
10pF
Reverse Recovery
Time
Thermal Resistance,
Junction to Ambient
t
rr
R
θJA
5nS
500
°C/W
Measured at
1.0MHz, V
R
=1.0V
I
F
=I
R
=10mA;
I
(REC)
= 1mA
.037
.950
.037
.950
.079
2.000
in
ches
mm
Revision:
C
www.mccsemi.com
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2014/04/24
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