BSP60-BSP62
PNP Silicon Darlington Transistor
•
High collector current
•
Low collector-emitter saturation voltage
•
Complementary types: BSP50...BSP52 (NPN)
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
4
2
1
3
Type
BSP60
BSP61
BSP62
Maximum Ratings
Parameter
Marking
BSP60
BSP61
BSP62
1=B
1=B
1=B
2=C
2=C
2=C
Pin Configuration
3=E
3=E
3=E
4=C
4=C
4=C
-
-
-
-
-
-
Package
SOT223
SOT223
SOT223
Symbol
V
CEO
Value
45
60
80
Unit
V
Collector-emitter voltage
BSP60
BSP61
BSP62
Collector-base voltage
BSP60
BSP61
BSP62
Emitter-base voltage
Collector current
Peak collector current,
t
p
≤
10 ms
Base current
Total power dissipation-
T
S
≤
124 °C
Junction temperature
Storage temperature
V
CBO
60
80
90
V
EBO
I
C
I
CM
I
B
P
tot
T
j
T
stg
5
1
2
100
1.5
150
-65 ... 150
mA
W
°C
A
1
2011-10-04
BSP60-BSP62
Thermal Resistance
Parameter
Symbol
R
thJS
Symbol
min.
DC Characteristics
Value
≤
17
Unit
Junction - soldering point
1)
K/W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Values
typ.
max.
Unit
Collector-emitter breakdown voltage
I
C
= 10 mA,
I
B
= 0 , BSP60
I
C
= 10 mA,
I
B
= 0 , BSP61
I
C
= 10 mA,
I
B
= 0 , BCP62
V
(BR)CEO
V
45
60
80
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
10
µA
µA
-
1000
2000
-
-
-
-
-
-
-
-
V
-
-
1.3
1.8
1.9
2.2
Collector-base breakdown voltage
I
C
= 100 µA,
I
E
= 0 , BSP60
I
C
= 100 µA,
I
E
= 0 , BSP61
I
C
= 100 µA,
I
E
= 0 , BSP62
V
(BR)CBO
60
80
90
V
(BR)EBO
I
CES
I
EBO
h
FE
Emitter-base breakdown voltage
I
E
= 100 µA,
I
C
= 0
5
-
-
Collector-emitter cutoff current
V
CE
=
V
CE0max
,
V
BE
= 0
Emitter-base cutoff current
V
EB
= 4 V,
I
C
= 0
DC current gain
2)
I
C
= 150 mA,
V
CE
= 10 V
I
C
= 500 mA,
V
CE
= 10 V
Collector-emitter saturation voltage
2)
I
C
= 500 mA,
I
B
= 0.55 mA
I
C
= 1 A,
I
B
= 1 mA
V
CEsat
Base emitter saturation voltage
2)
I
C
= 500 mA,
I
B
= 0.5 mA
I
C
= 1 A,
I
B
= 1 mA
V
BEsat
-
-
AC Characteristics
Transition frequency
I
C
= 100 mA,
V
CE
= 5 V,
f
= 100 MHz
1
For calculation of
R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2
Pulse
f
T
-
200
-
MHz
test: t < 300µs; D < 2%
2
2011-10-04
Electronics Design Contest
京公网安备 11010802033920号
EEWORLD
