NXP Semiconductors
Product specification
MMIC wideband amplifier
FEATURES
Internally matched to 50
Very wide frequency range
Very flat gain
Unconditionally stable.
APPLICATIONS
Cable systems
LNB IF amplifiers
General purpose
ISM.
6
BGA2711
PINNING
PIN
1
2, 5
3
4
6
V
S
GND2
RF out
GND1
RF in
DESCRIPTION
6
5
4
1
3
DESCRIPTION
1
2
3
MAM455
4
2, 5
Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a 6-pin
SOT363 SMD plastic package.
Top view
Marking code:
G2-.
Fig.1 Simplified outline (SOT363) and symbol.
QUICK REFERENCE DATA
SYMBOL
V
S
I
S
|s
21
|
2
NF
P
L(sat)
PARAMETER
DC supply voltage
DC supply current
insertion power gain
noise figure
saturated load power
f = 1 GHz
f = 1 GHz
f = 1 GHz
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
CONDITIONS
5
12.6
13.1
4.8
2.8
TYP.
6
MAX.
UNIT
V
mA
dB
dB
dBm
2001 Oct 19
2
NXP Semiconductors
Product specification
MMIC wideband amplifier
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL
V
S
I
S
P
tot
T
stg
T
j
P
D
PARAMETER
DC supply voltage
supply current
total power dissipation
storage temperature
operating junction temperature
maximum drive power
T
s
80
C
CONDITIONS
RF input AC coupled
65
MIN.
6
BGA2711
MAX.
20
200
+150
150
10
UNIT
V
mA
mW
C
C
dBm
THERMAL RESISTANCE
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to solder
point
CONDITIONS
P
tot
= 200 mW; T
s
80
C
VALUE
300
UNIT
K/W
CHARACTERISTICS
V
S
= 5 V; I
S
= 12.6 mA; f = 1 GHz; T
j
= 25
C
unless otherwise specified.
SYMBOL
I
S
|s
21
|
2
R
L IN
R
L OUT
NF
BW
P
L(sat)
P
L 1 dB
IP3
(in)
IP3
(out)
PARAMETER
supply current
insertion power gain
return losses input
return losses output
noise figure
bandwidth
saturated load power
load power
input intercept point
output intercept point
f = 1 GHz
f = 2 GHz
f = 1 GHz
f = 2 GHz
f = 1 GHz
f = 2 GHz
f = 1 GHz
f = 2 GHz
at
s
21
2
3
dB below flat gain at 1 GHz
f = 1 GHz
f = 2 GHz
at 1 dB gain compression; f = 1 GHz
at 1 dB gain compression; f = 2 GHz
f = 1 GHz
f = 2 GHz
f = 1 GHz
f = 2 GHz
CONDITIONS
MIN.
10
TYP.
12.6
13.1
13.9
11
10
18
13
4.8
4.8
3.6
2.8
0.6
0.7
1.8
4.8
8.5
8.3
5.4
MAX.
16
UNIT
mA
dB
dB
dB
dB
dB
dB
dB
dB
GHz
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
2001 Oct 19
3
NXP Semiconductors
Product specification
MMIC wideband amplifier
APPLICATION INFORMATION
Figure 2 shows a typical application circuit for the
BGA2711 MMIC. The device is internally matched to 50
,
and therefore does not need any external matching. The
value of the input and output DC blocking capacitors C2,
C3 should be not more than 100 pF for applications above
100 MHz. However, when the device is operated below
100 MHz, the capacitor value should be increased.
The 22 nF supply decoupling capacitor, C1 should be
located as closely as possible to the MMIC.
Separate paths must be used for the ground planes of the
ground pins GND1, GND2, and these paths must be as
short as possible. When using vias, use multiple vias per
pin in order to limit ground path inductance.
handbook, halfpage
BGA2711
DC-block
handbook, halfpage
100 pF
input
DC-block
100 pF
DC-block
100 pF
output
MGU437
Fig.3 Easy cascading application circuit.
mixer
to IF circuit
or demodulator
wideband
amplifier
from RF
circuit
V
halfpage
handbook,
s
C1
Vs
RF input
C2
GND1
GND2
MGU435
MGU438
oscillator
RF in
RF out
C3
RF output
Fig.4 Application as IF amplifier.
Fig.2 Typical application circuit.
handbook, halfpage
mixer
to IF circuit
or demodulator
LNA
wideband
amplifier
oscillator
MGU439
antenna
Figure 3 shows two cascaded MMICs. This configuration
doubles overall gain while preserving broadband
characteristics. Supply decoupling and grounding
conditions for each MMIC are the same as those for the
circuit of Fig.2.
The excellent wideband characteristics of the MMIC make
it and ideal building block in IF amplifier applications such
as LBNs (see Fig.4).
As a buffer amplifier between an LNA and a mixer in a
receiver circuit, the MMIC offers an easy matching, low
noise solution (see Fig.5).
In Fig.6 the MMIC is used as a driver to the power amplifier
in part of a transmitter circuit. Good linear performance
and matched input and output offer quick design solutions
in such applications.
Fig.5 Application as RF amplifier.
handbook, halfpage
mixer
to power
amplifier
wideband
amplifier
oscillator
from modulation
or IF circuit
MGU440
Fig.6 Application as driver amplifier.
2001 Oct 19
4
Test/Measurement
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