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BCW33LT3

Description
Bipolar Transistors - BJT 100mA 32V NPN
CategoryDiscrete semiconductor    The transistor   
File Size140KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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Bipolar Transistors - BJT 100mA 32V NPN

BCW33LT3 Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Contains lead
MakerON Semiconductor
Parts packaging codeSOT-23
package instructionPLASTIC, CASE 318-08, 3 PIN
Contacts3
Manufacturer packaging code318-08
Reach Compliance Codenot_compliant
ECCN codeEAR99
Is SamacsysN
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage32 V
ConfigurationSINGLE
Minimum DC current gain (hFE)420
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.225 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
BCW33LT1G, SBCW33LT1G
General Purpose Transistor
NPN Silicon
Features
http://onsemi.com
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
SOT−23
(TO−236)
CASE 318−08
STYLE 6
MAXIMUM RATINGS
Rating
Collector
Emitter Voltage
Collector
Base Voltage
Emitter
Base Voltage
Collector Current
Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
32
32
5.0
100
Unit
Vdc
Vdc
Vdc
mAdc
COLLECTOR
3
1
BASE
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board
(Note 1)
T
A
= 25C
Derate above 25C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
Alumina Substrate (Note 2),
T
A
= 25C
Derate above 25C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
225
1.8
R
qJA
P
D
300
2.4
R
qJA
T
J
, T
stg
417
−55
to +150
mW
mW/C
C/W
C
556
mW
mW/C
C/W
Max
Unit
MARKING DIAGRAM
D3 M
G
G
D3
= Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0

0.75

0.062 in.
2. Alumina = 0.4

0.3

0.024 in. 99.5% alumina.
ORDERING INFORMATION
Device
BCW33LT1G
SBCW33LT1G
BCW33LT3G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
3,000/Tape & Reel
3,000/Tape & Reel
10,000/Tape & Reel
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2011
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BCW33LT1/D
November, 2011
Rev. 5
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