BAS521
Single high-voltage switching diode
Rev. 2 — 5 November 2010
Product data sheet
1. Product profile
1.1 General description
Single high-voltage switching diode, fabricated in planar technology, and encapsulated in
a SOD523 (SC-79) ultra small Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
High switching speed: t
rr
≤
50 ns
High reverse voltage: V
R
≤
300 V
Repetitive peak forward current: I
FRM
≤
1 A
Ultra small SMD plastic package
AEC-Q101 qualified
1.3 Applications
High-speed switching
High-voltage switching
1.4 Quick reference data
Table 1.
Symbol
I
F
V
R
t
rr
[1]
[2]
Quick reference data
Parameter
forward current
reverse voltage
reverse recovery time
[2]
Conditions
T
sp
≤
90
°C
[1]
Min
-
-
-
Typ
-
-
16
Max
250
300
50
Unit
mA
V
ns
T
sp
is the solder point temperature at the soldering point of the cathode tab.
When switched from I
F
= 30 mA to I
R
= 30 mA; R
L
= 100
Ω;
measured at I
R
= 3 mA.
NXP Semiconductors
BAS521
Single high-voltage switching diode
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
Graphic symbol
1
2
1
2
006aab040
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Package
Name
BAS521
SC-79
Description
plastic surface-mounted package; 2 leads
Version
SOD523
Type number
4. Marking
Table 4.
BAS521
Marking codes
Marking code
L4
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
R
V
RRM
I
F
I
FRM
I
FSM
P
tot
T
j
T
amb
T
stg
[1]
[2]
[3]
Parameter
reverse voltage
repetitive peak reverse
voltage
forward current
repetitive peak forward
current
non-repetitive peak forward
current
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
Min
-
-
Max
300
300
250
Unit
V
V
mA
A
A
mW
°C
°C
°C
T
sp
≤
90
°C
t
p
= 1 ms;
δ
= 0.25
square wave;
t
p
= 1
μs
T
sp
≤
90
°C
[1]
-
[2]
1
4.5
500
150
+150
+150
-
-
-
−65
−65
[1][3]
T
sp
is the solder point temperature at the soldering point of the cathode tab.
T
j
= 25
°C
prior to surge.
Reflow soldering is the only recommended soldering method.
BAS521
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 5 November 2010
2 of 11
NXP Semiconductors
BAS521
Single high-voltage switching diode
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
R
th(j-sp)
[1]
[2]
[3]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
[1][2]
Min
-
-
Typ
-
-
Max
500
120
Unit
K/W
K/W
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
Soldering point of cathode tab.
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
BR
V
F
I
R
Parameter
breakdown voltage
forward voltage
reverse current
Conditions
I
R
= 100
μA
I
F
= 100 mA
V
R
= 250 V
V
R
= 250 V;
T
amb
= 150
°C
C
d
t
rr
[1]
[2]
[1]
Min
300
-
-
-
-
[2]
Typ
340
0.95
30
40
0.4
16
Max
-
1.1
150
100
5
50
Unit
V
V
nA
μA
pF
ns
diode capacitance
reverse recovery time
Pulse test: t
p
= 300
μs; δ
= 0.02.
f = 1 MHz; V
R
= 0 V
-
When switched from I
F
= 30 mA to I
R
= 30 mA; R
L
= 100
Ω;
measured at I
R
= 3 mA.
BAS521
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 5 November 2010
3 of 11
NXP Semiconductors
BAS521
Single high-voltage switching diode
500
I
F
(mA)
400
mhc618
10
2
I
R
(μA)
10
mhc619
300
1
200
10
−1
100
(1) (2)
(3)
0
0
0.5
1
10
−2
V
F
(V)
1.5
0
40
80
120
160
200
T
j
(°C)
(1) T
amb
= 150
°C
(2) T
amb
= 75
°C
(3) T
amb
= 25
°C
V
R
= V
Rmax
Fig 1.
Forward current as a function of forward
voltage; typical values
mhc620
Fig 2.
Reverse current as a function of junction
temperature; typical values
mhc621
300
I
F
(mA)
0.42
C
d
(pF)
200
0.38
100
0.34
0
0
50
100
200
150
T
amb
(°C)
0.3
0
10
20
30
V
R
(V)
40
f = 1 MHz; T
amb
= 25
°C
Fig 3.
Forward current as a function of ambient
temperature; derating curve
Fig 4.
Diode capacitance as a function of reverse
voltage; typical values
BAS521
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 5 November 2010
4 of 11
NXP Semiconductors
BAS521
Single high-voltage switching diode
10
2
I
FSM
(A)
10
mbg703
1
10
−1
1
10
10
2
10
3
t
p
(μs)
10
4
Based on square wave currents.
T
j
= 25
°C
prior to surge.
Fig 5.
Non-repetitive peak forward current as a function of pulse duration; maximum values
8. Test information
t
r
D.U.T.
R
S
= 50
Ω
V = V
R
+
I
F
×
R
S
I
F
SAMPLING
OSCILLOSCOPE
R
i
= 50
Ω
V
R
mga881
t
p
t
10 %
+
I
F
trr
t
90 %
input signal
output signal
(1)
(1) I
R
= 3 mA
Fig 6.
Reverse recovery time test circuit and waveforms
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard
Q101 - Stress test qualification for discrete semiconductors,
and is
suitable for use in automotive applications.
BAS521
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 5 November 2010
5 of 11
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