MX29LV017B
FEATURES
• Extended single - supply voltage range 2.7V to 3.6V
• 2,097,152 x 8
• Single power supply operation
- 3.0V only operation for read, erase and program
operation
• Fast access time: 70/90ns
• Fully compatible with MX29LV017A decice
• Low power consumption
- 30mA maximum active current
- 0.2uA typical standby current
• Command register architecture
- Byte Programming (9us typical)
- Sector Erase (Sector structure 64K-Byte x32)
• Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors with
Erase Suspend capability.
- Automatically program and verify data at specified
address
• Erase suspend/Erase Resume
- Suspends sector erase operation to read data from,
or program data to, any sector that is not being erased,
then resumes the erase.
16M-BIT [2Mx8] CMOS SINGLE VOLTAGE
3V ONLY FLASH MEMORY
• Status Reply
- Data# Polling & Toggle bit for detection of program
and erase operation completion.
• Ready/Busy# pin (RY/BY#)
- Provides a hardware method of detecting program or
erase operation completion.
• Sector protection
- Hardware method to disable any combination of
sectors from program or erase operations
- Temporary sector unprotect allows code changes in
previously locked sectors.
• CFI (Common Flash Interface) compliant
- Flash device parameters stored on the device and
provide the host system to access
• 100,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1V to VCC+1V
• Low VCC write inhibit is equal to or less than 1.4V
• Package type:
- 40-pin TSOP
• Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
GENERAL DESCRIPTION
The MX29LV017B is a 16-mega bit Flash memory orga-
nized as 2M bytes of 8 bits. MXIC's Flash memories
offer the most cost-effective and reliable read/write non-
volatile random access memory. The MX29LV017B is
packaged in 40-pin TSOP. It is designed to be repro-
grammed and erased in system or in standard EPROM
programmers.
The standard MX29LV017B offers access time as fast
as 70ns, allowing operation of high-speed microproces-
sors without wait states. To eliminate bus contention,
the MX29LV017B has separate chip enable (CE#) and
output enable (OE#) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29LV017B uses a command register to manage this
functionality. The command register allows for 100%
TTL level control inputs and fixed power supply levels
during erase and programming, while maintaining maxi-
mum EPROM compatibility.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and program operations produces reliable cy-
cling. The MX29LV017B uses a 2.7V~3.6V VCC supply
to perform the High Reliability Erase and auto Program/
Erase algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamperes on
address and data pin from -1V to VCC + 1V.
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MX29LV017B
AUTOMATIC PROGRAMMING
The MX29LV017B is byte programmable using the Au-
tomatic Programming algorithm. The Automatic Pro-
gramming algorithm makes the external system do not
need to have time out sequence nor to verify the data
programmed. The typical chip programming time at room
temperature of the MX29LV017B is less than 18 sec-
onds.
dard microprocessor write timings. The device will auto-
matically pre-program and verify the entire array. Then
the device automatically times the erase pulse width,
provides the erase verification, and counts the number
of sequences. A status bit toggling between consecu-
tive read cycles provides feedback to the user as to the
status of the erasing operation.
Register contents serve as inputs to an internal state-
machine which controls the erase and programming cir-
cuitry. During write cycles, the command register inter-
nally latches address and data needed for the program-
ming and erase operations. During a system write cycle,
addresses are latched on the falling edge, and data are
latched on the rising edge of WE# or CE#, whichever
happens first.
MXIC's Flash technology combines years of EPROM
experience to produce the highest levels of quality, reli-
ability, and cost effectiveness. The MX29LV017B elec-
trically erases all bits simultaneously using Fowler-
Nordheim tunneling. The bytes are programmed by us-
ing the EPROM programming mechanism of hot elec-
tron injection.
During a program cycle, the state-machine will control
the program sequences and command register will not
respond to any command set. During a Sector Erase
cycle, the command register will only respond to Erase
Suspend command. After Erase Suspend is completed,
the device stays in read mode. After the state machine
has completed its task, it will allow the command regis-
ter to respond to its full command set.
AUTOMATIC PROGRAMMING ALGORITHM
MXIC's Automatic Programming algorithm requires the
user to only write program set-up commands (including
2 unlock write cycle and A0H) and a program command
(program data and address). The device automatically
times the programming pulse width, provides the pro-
gram verification, and counts the number of sequences.
A status bit similar to Data# Polling and a status bit
toggling between consecutive read cycles, provide feed-
back to the user as to the status of the programming
operation. Refer to write operation status, Table 7, for
more information on these status bits.
AUTOMATIC CHIP ERASE
The entire chip is bulk erased using 10 ms erase pulses
according to MXIC's Automatic Chip Erase algorithm.
Typical erasure at room temperature is accomplished in
less than 25 second. The Automatic Erase algorithm
automatically programs the entire array prior to electri-
cal erase. The timing and verification of electrical erase
are controlled internally within the device.
AUTOMATIC SELECT
AUTOMATIC SECTOR ERASE
The MX29LV017B is sector(s) erasable using MXIC's
Auto Sector Erase algorithm. The Automatic Sector
Erase algorithm automatically programs the specified
sector(s) prior to electrical erase. The timing and verifi-
cation of electrical erase are controlled internally within
the device. An erase operation can erase one sector,
multiple sectors, or the entire device.
The automatic select mode provides manufacturer and
device identification, and sector protection verification,
through identifier codes output on Q7~Q0. This mode is
mainly adapted for programming equipment on the de-
vice to be programmed with its programming algorithm.
When programming by high voltage method, automatic
select mode requires VID (11.5V to 12.5V) on address
pin A9. Other address pin A6, A1 and A0 as referring to
Table 2. In addition, to access the automatic select codes
in-system, the host can issue the automatic select com-
mand through the command register without requiring
VID, as shown in Table 4.
To verify whether or not sector being protected, the sec-
tor address must appear on the appropriate highest or-
REV. 1.1, DEC. 07, 2004
AUTOMATIC ERASE ALGORITHM
MXIC's Automatic Erase algorithm requires the user to
write commands to the command register using stan-
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Real-time operating system RTOS
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