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ZTX749_D26Z

Description
Bipolar Transistors - BJT Low Sat Transistor
Categorysemiconductor    Discrete semiconductor   
File Size38KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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Bipolar Transistors - BJT Low Sat Transistor

ZTX749_D26Z Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerFairchild
Product CategoryBipolar Transistors - BJT
RoHSDetails
Mounting StyleThrough Hole
Package / CaseTO-226-3
Transistor PolarityPNP
ConfigurationSingle
Collector- Emitter Voltage VCEO Max- 25 V
Collector- Base Voltage VCBO- 35 V
Emitter- Base Voltage VEBO- 5 V
Collector-Emitter Saturation Voltage- 500 mV
Maximum DC Collector Current2 A
Maximum Operating Temperature+ 150 C
DC Current Gain hFE Max300
Height7.87 mm
Length4.7 mm
PackagingCut Tape
PackagingReel
Width3.93 mm
Continuous Collector Current- 2 A
Minimum Operating Temperature- 55 C
Pd - Power Dissipation1 W
Factory Pack Quantity2000
Unit Weight0.012311 oz
ZTX749
ZTX749
PNP Low Saturation Transistor
• This device are designed with high current gain and low saturation
voltage with collector currents up to 2A continuous.
C
BE
TO-226
Absolute Maximum Ratings
T
A
=25°C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
Value
-25
-35
-5
-2
-55 ~ +150
Units
V
V
V
A
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
A
=25°C unless otherwise noted
Symbol
Off Characteristics
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
h
FE
Parameter
Test Condition
I
C
= -10mA
I
C
= -100µA
I
E
= -100µA
V
CB
= -30V
V
CB
= -30V, T
A
= 100°C
V
EB
= -4V
I
C
= -50mA, V
CE
= -2V
I
C
= -1A, V
CE
= -2V
I
C
= -2A, V
CE
= -2V
I
C
= -6A, V
CE
= -2V
I
C
= -1A, I
B
= -100mA
I
C
= -2A, I
B
= -200mA
I
C
= -1A, I
B
= -100mA
I
C
= -1A, V
CE
= -2V
V
CB
= -10V, I
E
= 0, f = 1MHz
I
C
= 1-00mA, V
CE
= -5V
f = 100MHz
100
70
100
75
15
Min.
-25
-35
-5
-100
-10
-100
Max.
Units
V
V
V
nA
µA
nA
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
On Characteristics*
300
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
C
obo
f
T
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Transition Frequency
-300
-500
-1.25
-1
100
mV
V
V
P
F
Small-Signal Characteristics
* Pulse Test: Pulse Width
300µs, Duty Cycle
2%
Thermal Characteristics
T
A
=25°C unless otherwise noted
Symbol
P
D
R
θJA
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Parameter
Max.
1
125
Units
W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, August 2003

ZTX749_D26Z Related Products

ZTX749_D26Z
Description Bipolar Transistors - BJT Low Sat Transistor
Product Attribute Attribute Value
Manufacturer Fairchild
Product Category Bipolar Transistors - BJT
RoHS Details
Mounting Style Through Hole
Package / Case TO-226-3
Transistor Polarity PNP
Configuration Single
Collector- Emitter Voltage VCEO Max - 25 V
Collector- Base Voltage VCBO - 35 V
Emitter- Base Voltage VEBO - 5 V
Collector-Emitter Saturation Voltage - 500 mV
Maximum DC Collector Current 2 A
Maximum Operating Temperature + 150 C
DC Current Gain hFE Max 300
Height 7.87 mm
Length 4.7 mm
Width 3.93 mm
Continuous Collector Current - 2 A
Minimum Operating Temperature - 55 C
Pd - Power Dissipation 1 W
Factory Pack Quantity 2000
Unit Weight 0.012311 oz
Packaging Reel

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