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IRL3714STRRPBF

Description
MOSFET 20V 1 N-CH HEXFET 20mOhms 6.5nC
Categorysemiconductor    Discrete semiconductor   
File Size231KB,12 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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IRL3714STRRPBF Overview

MOSFET 20V 1 N-CH HEXFET 20mOhms 6.5nC

IRL3714STRRPBF Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerInfineon
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-252-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage20 V
Id - Continuous Drain Current36 A
Rds On - Drain-Source Resistance20 mOhms
Vgs th - Gate-Source Threshold Voltage3 V
Vgs - Gate-Source Voltage20 V
Qg - Gate Charge6.5 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
ConfigurationSingle
Channel ModeEnhancement
PackagingCut Tape
PackagingReel
Height2.3 mm
Length6.5 mm
Transistor Type1 N-Channel
Width6.22 mm
Forward Transconductance - Min17 S
Fall Time4.5 ns
Pd - Power Dissipation47 W
Rise Time78 ns
Factory Pack Quantity3200
Typical Turn-Off Delay Time10 ns
Typical Turn-On Delay Time8.7 ns
Unit Weight0.139332 oz
PD - 95580
SMPS MOSFET
Applications
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l
High Frequency Buck Converters for
Computer Processor Power
l
Lead-Free
Benefits
l
l
l
IRL3714PbF
IRL3714SPbF
IRL3714LPbF
HEXFET
®
Power MOSFET
V
DSS
20V
R
DS(on)
max
20mΩ
I
D
36A
Ultra-Low Gate Impedance
Very Low R
DS(on)
at 4.5V V
GS
Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRL3714
D
2
Pak
IRL3714S
TO-262
IRL3714L
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
C
I
D
@ T
C
I
DM
P
D
@T
C
P
D
@T
C
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current

Maximum Power Dissipation
ƒ
Maximum Power Dissipation
ƒ
Linear Derating Factor
Junction and Storage Temperature Range
Max.
20
± 20
36
31
140
47
33
0.31
-55 to + 175
Units
V
V
A
W
W
W/°C
°C
= 25°C
= 70°C
= 25°C
= 70°C
T
J
, T
STG
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
„
Junction-to-Ambient
„
Junction-to-Ambient (PCB mount)
…
Typ.
–––
0.50
–––
–––
Max.
3.2
–––
62
40
Units
°C/W
Notes

through
†
are on page 11
www.irf.com
1
07/20/04

IRL3714STRRPBF Related Products

IRL3714STRRPBF IRL3714STRLPBF
Description MOSFET 20V 1 N-CH HEXFET 20mOhms 6.5nC MOSFET 20V 1 N-CH HEXFET 20mOhms 6.5nC
Product Attribute Attribute Value Attribute Value
Manufacturer Infineon Infineon
Product Category MOSFET MOSFET
RoHS Details Details
Technology Si Si
Mounting Style SMD/SMT SMD/SMT
Package / Case TO-252-3 TO-252-3
Number of Channels 1 Channel 1 Channel
Transistor Polarity N-Channel N-Channel
Vds - Drain-Source Breakdown Voltage 20 V 20 V
Id - Continuous Drain Current 36 A 36 A
Rds On - Drain-Source Resistance 20 mOhms 20 mOhms
Vgs th - Gate-Source Threshold Voltage 3 V 3 V
Vgs - Gate-Source Voltage 20 V 20 V
Qg - Gate Charge 6.5 nC 6.5 nC
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 175 C + 175 C
Configuration Single Single
Channel Mode Enhancement Enhancement
Height 2.3 mm 2.3 mm
Length 6.5 mm 6.5 mm
Transistor Type 1 N-Channel 1 N-Channel
Width 6.22 mm 6.22 mm
Forward Transconductance - Min 17 S 17 S
Fall Time 4.5 ns 4.5 ns
Pd - Power Dissipation 47 W 47 W
Rise Time 78 ns 78 ns
Factory Pack Quantity 3200 3200
Typical Turn-Off Delay Time 10 ns 10 ns
Typical Turn-On Delay Time 8.7 ns 8.7 ns
Unit Weight 0.139332 oz 0.139332 oz
Packaging Reel Reel
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