BLF6G27-135; BLF6G27LS-135
WiMAX power LDMOS transistor
Rev. 02 — 26 May 2008
Product data sheet
1. Product profile
1.1 General description
135 W LDMOS power transistor for base station applications at frequencies from
2500 MHz to 2700 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
°
C in a class-AB production test circuit.
Mode of operation
1-carrier N-CDMA
[1]
[1]
[2]
f
(MHz)
2500 to 2700
V
DS
P
L(AV)
(V)
32
(W)
20
P
L(p)
G
p
(W)
200
16
η
D
ACPR
885k
ACPR
1980k
(dBc)
(dBc)
−67
[2]
(dB) (%)
22.5
−52
[2]
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 to 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
Measured within 30 kHz bandwidth.
1.2 Features
I
Typical 1-carrier N-CDMA performance (Single carrier IS-95 with pilot, paging, sync
and 6 traffic channels [Walsh codes 8 to 13]. PAR = 9.7 dB at 0.01 % probability on the
CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 2500 MHz and
2700 MHz, a supply voltage of 32 V and an I
Dq
of 1200 mA:
N
Average output power = 20 W
N
Power gain = 16 dB
N
Drain efficiency = 22.5 %
N
ACPR
885k
=
−52.0
dBc in 30 kHz bandwidth
I
Easy power control
I
Integrated ESD protection
I
Excellent ruggedness
I
High efficiency
I
Excellent thermal stability
I
Designed for broadband operation (2500 MHz to 2700 MHz)
I
Internally matched for ease of use
I
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
I
RF power amplifiers for base stations and multicarrier applications in the
2500 MHz to 2700 MHz frequency range
NXP Semiconductors
BLF6G27-135; BLF6G27LS-135
WiMAX power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
Graphic symbol
BLF6G27-135 (SOT502A)
1
1
3
2
2
3
sym112
BLF6G27LS-135 (SOT502B)
1
2
3
drain
gate
source
[1]
1
3
2
2
1
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name
BLF6G27-135
BLF6G27LS-135
-
-
Description
Version
flanged LDMOST ceramic package; 2 mounting holes; SOT502A
2 leads
earless flanged LDMOST ceramic package; 2 leads
SOT502B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
−0.5
-
−65
-
Max
65
+13
34
+150
200
Unit
V
V
A
°C
°C
5. Thermal characteristics
Table 5.
Symbol
R
th(j-case)
Thermal characteristics
Parameter
thermal resistance from
junction to case
Conditions
T
case
= 80
°C;
P
L
= 135 W (CW)
Type
BLF6G27-135
BLF6G27LS-135
Typ
0.5
0.45
Unit
K/W
K/W
2 of 13
BLF6G27-135_BLF6G27LS-135_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 26 May 2008
NXP Semiconductors
BLF6G27-135; BLF6G27LS-135
WiMAX power LDMOS transistor
6. Characteristics
Table 6.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
C
rs
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
Conditions
V
GS
= 0 V; I
D
= 0.5 mA
V
DS
= 10 V;
I
D
= 216 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= +11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 6.3 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 7.2 A
V
GS
=0 V; V
DS
= 28 V;
f = 1 MHz
Min
65
1.4
-
30.6
-
-
-
-
Typ
-
2
-
34
-
12
0.085
3.15
Max
-
2.4
4.2
-
420
-
Unit
V
V
µA
A
nA
S
0.135
Ω
-
pF
7. Application information
Table 7.
Application information
Mode of operation: 1-carrier N-CDMA, single carrier IS-95 with pilot, paging, sync and 6 traffic
channels (Walsh codes 8 to 13). PAR = 9.7 dB at 0.01 % probability on the CCDF, channel
bandwidth is 1.2288 MHz; f
1
= 2500 MHz; f
2
= 2600 MHz; f
3
= 2700 MHz; RF performance at
V
DS
= 32 V; I
Dq
= 1200 mA; T
case
= 25
°
C; unless otherwise specified, in a class-AB production
circuit.
Symbol
G
p
RL
in
η
D
ACPR
885k
ACPR
1980k
P
L(M)
[1]
[2]
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio
(885 kHz)
adjacent channel power ratio
(1980 kHz)
peak output power
Conditions
P
L(AV)
= 20 W
P
L(AV)
= 20 W
P
L(AV)
= 20 W
P
L(AV)
= 20 W
P
L(AV)
= 20 W
[1]
Min
14
-
19.0
−48
−65
185
Typ
16
−10
22.5
−52
−67
200
Max
-
-
-
-
-
-
Unit
dB
dB
%
dBc
dBc
W
[1]
[2]
Measured within 30 kHz bandwidth.
Measured at 2.7 GHz and 3 dB compression of the CCDF at 0.01 % probability.
7.1 Ruggedness in class-AB operation
The BLF6G27-135 and BLF6G27LS-135 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
DS
= 28 V; I
Dq
= 1200 mA; P
L
= P
L(1dB)
; f = 2700 MHz.
BLF6G27-135_BLF6G27LS-135_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 26 May 2008
3 of 13
NXP Semiconductors
BLF6G27-135; BLF6G27LS-135
WiMAX power LDMOS transistor
7.2 NXP WiMAX signal
7.2.1 WiMAX signal description
frame duration = 5 ms; bandwidth = 10 MHz; sequency = 1 frame;
frequency band = WCS; sampling rate = 11.2 MHz; n = 28 / 25; G = T
g
/ T
b
= 1 / 8;
FFT = 1024; zone type = PUSC;
δ
= 97.7 %; number of symbols = 46;
number of subchannels = 30; PAR = 9.5 dB.
Preamble: 1 symbol
×
30 subchannels; P
L
= P
L(nom)
+ 3.86 dB.
Table 8.
Zone 0
Zone 0
Zone 0
Frame structure
Modulation technique
QPSK1/2
64QAM3/4
64QAM3/4
Data length
3 bit
692 bit
10000 bit
FCH
data
data
2 symbols
×
4 subchannels
2 symbols
×
26 subchannels
44 symbols
×
30 subchannels
Frame contents
7.2.2 Graphs
001aah641
001aah642
2.5
EVM
(%)
2.0
20
G
p
(dB)
18
25
η
D
(%)
20
1.5
16
G
p
15
1.0
14
η
D
10
0.5
12
5
0
0
4
8
12
16
20
28
P
L(AV)
(W)
24
10
0
4
8
12
16
20
28
P
L(AV)
(W)
24
0
V
DS
= 32 V; I
Dq
= 1200 mA; f = 2600 MHz.
V
DS
= 32 V; I
Dq
= 1200 mA; f = 2600 MHz.
Fig 1.
EVM as function of average load power;
typical values
Fig 2.
Power gain and drain efficiency as functions of
average load power; typical values
BLF6G27-135_BLF6G27LS-135_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 26 May 2008
4 of 13
NXP Semiconductors
BLF6G27-135; BLF6G27LS-135
WiMAX power LDMOS transistor
−20
ACPR
(dBc)
−30
001aah643
−40
(1)
−50
(2)
(3)
−60
−70
0
4
8
12
16
20
24
28
P
L(AV)
(W)
V
DS
= 32 V; I
Dq
= 1200 mA.
(1)
(2)
(3)
f = 2600 MHz
±
10 MHz
f = 2600 MHz
±
20 MHz
f = 2600 MHz
±
30 MHz
Fig 3.
Adjacent channel power ratio as function of average load power; typical values
7.3 Single carrier N-CDMA broadband performance at 9 W average
7.3.1 Graphs
001aah644
001aah645
(1)
(2)
19
G
p
(dB)
18
25
η
D
(%)
24
−45
ACPR
(dBc)
−50
ACPR
885k
17
G
p
16
η
D
15
23
−55
(2)
(1)
22
−60
ACPR
1500k
21
−65
(2)
(1)
ACPR
1980k
14
20
−70
13
2500
2550
2600
2650
f (MHz)
19
2700
−75
2500
2550
2600
2650
f (MHz)
2700
V
DS
= 32 V; I
Dq
= 1200 mA; Single Carrier N-CDMA;
PAR = 9.7 dB at 0.01 % probability; IBW = 30 kHz.
V
DS
= 32 V; I
Dq
= 1200 mA; Single Carrier N-CDMA;
PAR = 9.7 dB at 0.01 % probability; IBW = 30 kHz.
(1) Low frequency component
(2) High frequency component
Fig 4.
Power gain and drain efficiency as functions of
frequency; typical values
Fig 5.
Adjacent channel power ratio as function of
frequency; typical values
BLF6G27-135_BLF6G27LS-135_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 26 May 2008
5 of 13
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