10.7 Gbps, 3.3 V, Low Noise,
TIA with Average Power Monitor
ADN2820
FEATURES
Technology: high performance SiGe
Bandwidth: 9 GHz
Input noise current density: 1.0 µA
Optical sensitivity: –19.3 dBm
Differential transimpedance: 5000 V/A
Power dissipation: 200 mW
Input current overload: 2.8 mA p-p
Linear input range: 0.15 mA p-p
Output resistance: 50 Ω/side
Output offset adjustment range: 240 mV
Average input power monitor: 1 V/mA
Die size: 0.87 mm × 1.06 mm
PRODUCT DESCRIPTION
The ADN2820 is a compact, high performance, 3.3 V power
supply SiGe transimpedance amplifier (TIA) optimized for
10 Gbps Metro-Access and Ethernet systems. It is a single chip
solution for detecting photodiode current with a differential
output voltage. The ADN2820 features low input referred noise
current and high output transimpedance gain, capable of
driving a typical CDR or transceiver directly. A POWMON
output is provided for input average power monitoring and
alarm generation. Low nominal output offset enables dc output
coupling to 3.3 V circuits. The OFFSET control input enables
output slice level adjustment for asymmetric input signals. The
ADN2820 operates with a 3.3 V power supply and is available in
die form.
APPLICATIONS
10.7 Gbps optical modules
SONET/SDH OC-192/STM-64 and 10 GbE
receivers, transceivers, and transponders
FUNCTIONAL BLOCK DIAGRAM
3.3V
R
F
50Ω
R
F
= 500Ω
OUT (5)
OUTB (6)
hυ
OFFSET (14)
IN (13)'
C
B
0.85V
C
F
POWMON (8)
20mA
A
V
= 20dB
50Ω
VCC (1,2,3)
GND (10, 11)
GND (4,7)
CLF (9)
CLF
03194-0-001
Figure 1. Functional Block Diagram/Typical Operating Circuit
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.326.8703
© 2003 Analog Devices, Inc. All rights reserved.
ADN2820
TABLE OF CONTENTS
Specifications..................................................................................... 3
Absolute Maximum Ratings............................................................ 4
ESD Caution.................................................................................. 4
Pad Layout and Functional Descriptions ...................................... 5
Pad Layout ..................................................................................... 5
Die Information............................................................................ 5
Pad Descriptions........................................................................... 5
Pad Coordinates ........................................................................... 5
Typical Performance Characteristics ............................................. 6
Applications........................................................................................8
Optical Sensitivity .........................................................................8
Optical Power Monitor.................................................................8
Output Offset Adjust Input ..........................................................9
Low Frequency Transimpedance Cutoff Capacitor Selection.9
Bandwidth versus Input Bond Wire Inductance.................... 10
Bandwidth versus Output Bond Wire Inductance................. 10
Butterfly Package Assembly ...................................................... 11
Outline Dimensions ....................................................................... 12
Ordering Guide .......................................................................... 12
REVISION HISTORY
Revision 0: Initial Version
Rev. 0 | Page 2 of 12
ADN2820
SPECIFICATIONS
Table 1. Electrical Specifications
Parameter
DYNAMIC PERFORMANCE
Bandwidth
1, 2
Total Input RMS Noise
1, 2
Small Signal Transimpedance
Transimpedance Ripple
Group Delay Variation
2
2
Conditions
1
–3 dB
DC to 10 GHz
100 MHz
100 MHz to 3 GHz
100 MHz to 3 GHz
100 MHz to 9 GHz
I
IN,P-P
= 2.5 mA
C
LF
= 0.1 µF
DC – 10 GHz, differential
Peak-to-peak, <1 dB compression
ER = 10 dB
ER = 4 dB
Differential, I
IN P-P
= 2.0 mA
Min
7.5
4000
Typ
9
1.0
5000
±0.5
±10
±30
17
12
–10
0.15
2.8
1.9
1.1
200
0.85
V
CC
– 0.3
±3
120
240
1
20
Max
Unit
GHz
µA
V/A
dB
ps
ps
ps
kHz
dB
mA
mA p-p
mA p-p
V p-p
mW
V
V
mV
mV/V
mV
V/mA
mV
6000
Total Peak-to-Peak Jitter
2, 3
Low Frequency Cutoff
S22
Linear Input Range
Input Overload Current
1, 2
Maximum Output Swing
DC PERFORMANCE
Power Dissipation
Input Voltage
Output Common-Mode Voltage
Output Offset
Offset Adjust Sensitivity
Offset Adjust Range
POWMON Sensitivity
POWMON Offset
1.4
1.0
0.88
147
0.75
264
0.93
+20
DC terminated to V
CC
I
IN, AVE
< 0.1 mA
See Figure 3
See Figure 3
I
IN, AVE
= 10 µA to 1 mA
I
IN, AVE
= 0 µA
–20
0.76
1.2
Min/Max V
CC
= 3.3 V
±
0.3 V, T
AMBIENT
= –15°C to +85°C; Typ V
CC
= 3.3 V, T
AMBIENT
= 25°C.
Photodiode capacitance C
D
= 0.22 pF
±
0.04 pF; photodiode resistance = 20 Ω; C
B
= C
F
= 100 pF; R
F
= 100 Ω; input wire bond inductance L
IN
= 0.5 nH
±
0.15 nH; output
bond wire inductance L
OUT, OUTB
= 0.85 nH
±
0.15 nH; load impedance = 50 Ω (each output, dc- or ac-coupled).
3
10
–12
BER, 8 dB extinction ratio, 0.85 A/W PIN responsivity.
1
2
Rev. 0 | Page 3 of 12
ADN2820
ABSOLUTE MAXIMUM RATINGS
Table 2. ADN2820 Absolute Maximum Ratings
Parameter
Supply Voltage (V
CC
to GND)
Internal Power Dissipation
Output Short Circuit Duration
Maximum Input Current
Storage Temperature Range
Operating Ambient Temperature Range
Maximum Junction Temperature
Die Attach Temperature (<60 seconds)
Rating
5.2 V
Indefinite
5 mA
–65°C to +125°C
–15°C to +85°C
165°C
450°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
this product features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
Rev. 0 | Page 4 of 12
ADN2820
PAD LAYOUT AND FUNCTIONAL DESCRIPTIONS
PAD LAYOUT
1
VCC
14
OFFSET
2
VCC
3
VCC
GND
4
DIE INFORMATION
Die Size
0.875 mm × 1.060 mm
Die Thickness
12 mils = 0.3 mm
Passivation Openings
13
IN
0,0'
OUT
5
0.08 mm × 0.08 mm
0.12 mm × 0.08 mm
12
TEST
OUTB
6
0.08 mm × 0.12 mm
11
GND
GND
10
CLF
9
GND
POWMON
8
03194-0-002
7
Passivation Composition
5000 Å Si
3
N
4
(Top)
+5000 Å SiO
2
(Bottom)
Pad Composition
Al/1% Cu
Figure 2. ADN2820 Pad Layout
Backside Contact
P-Type Handle (Oxide Isolated from Active Circuitry)
PAD DESCRIPTIONS
Table 3. Pad Descriptions
Pin No.
1–3
4, 7, 10, 11
5
6
8
9
12
13
14
Pad
VCC
GND
OUT
OUTB
POWMON
CLF
TEST
IN
OFFSET
Function
Positive Supply. Bypass to GND with a 100 pF or greater single-layer capacitor.
Ground.
Positive Output. Drives 50 Ω termination (ac or dc termination).
Negative Output. Drives 50 Ω termination (ac or dc termination).
Input Average Power Monitor. Analog signal proportional to average optical input power. Leave open if
unused.
Low Frequency Cutoff Setpoint. Connect with a 0.1 μF capacitor to GND for 20 kHz.
Test Pad. Leave Floating.
Current Input. Bond directly to reverse biased PIN or APD anode. Filter PIN or APD anode with 100 pF × 100 Ω
or greater.
Output Offset Adjust Input. Leave open if not being used and the input slice threshold will automatically be set
to the eye center.
PAD COORDINATES
Table 4. Pad Coordinates
Pin
No.
1
2
3
4
5
6
7
PAD
VCC
VCC
VCC
GND
OUT
OUTB
GND
X (mm)
–0.20
0.00
0.20
0.35
0.35
0.35
0.35
Y (mm)
0.45
0.45
0.45
0.30
0.10
–0.10
–0.30
Pin
No.
8
9
10
11
12
13
14
PAD
POWMON
CLF
GND
GND
TEST
IN
OFFSET
X (mm)
0.20
0.00
–0.20
–0.35
–0.35
–0.35
–0.35
Y (mm)
–0.45
–0.45
–0.45
–0.30
–0.10
0.10
0.30
Rev. 0 | Page 5 of 12
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