®
STTA512D/F/B/FP
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
t
rr
(typ)
V
F
(max)
FEATURES AND BENEFITS
n
5A
1200V
45ns
2.0V
A
K
A
K
K
n
n
n
n
n
n
SPECIFIC TO THE FOLLOWING OPERATIONS:
SNUBBING OR CLAMPING,
DEMAGNETIZATION AND RECTIFICATION
ULTRA-FAST, SOFT RECOVERY.
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR.
HIGH FREQUENCY AND/OR HIGH PULSED
CURRENT OPERATION.
HIGH REVERSE VOLTAGE CAPABILITY
INSULATED PACKAGES:
ISOWATT220AC, TO-220FPAC
Electrical insulation : 2000V DC
Capacitance : 12pF.
TO-220AC
STTA512D
ISOWATT220AC
STTA512F
K
DESCRIPTION
TURBOSWITCH 1200V drastically cuts losses in
all high voltage operations which require extremely
fast, soft and noise-free power diodes. Due to their
optimized switching performances they also highly
decrease power losses in any associated
switching IGBT or MOSFET in all “freewheel
mode” operations.
ABSOLUTE RATINGS
(limiting values)
O
so
b
Symbol
V
RRM
V
RSM
I
F(RMS)
I
FRM
I
FSM
T
stg
T
j
te
le
ro
P
uc
d
s)
t(
b
-O
so
DPAK
STTA512B
P
te
le
A
NC
od
r
s)
t(
uc
A
K
TO-220FPAC
STTA512FP
They are particularly suitable in motor control
circuitries, or in the primary of SMPS as snubber,
clamping or demagnetizing diodes. They are also
suitable for secondary of SMPS as high voltage
rectifier diodes.
Parameter
Value
1200
1200
TO-220AC / DPAK
ISOWATT220AC /
TO-220FPAC
20
10
70
45
- 65 to + 150
150
Unit
V
V
A
A
A
A
°C
°C
Repetitive peak reverse voltage
Non repetitive peak reverse voltage
RMS forward current
Repetitive peak forward current
Surge non repetitive forward current
Storage temperature range
tp = 5
µs
F = 5kHz square
tp = 10ms sinusoidal
Maximum operating junction temperature
TURBOSWITCH is a trademark of STMicroelectronics.
August 2003 - Ed: 5B
1/10
STTA512D/F/B/FP
THERMAL AND POWER DATA
Symbol
R
th(j-c)
Parameter
Junction to case thermal
resistance
TO-220AC / DPAK
ISOWATT220AC /
TO-220FPAC
P
1
Conduction power dissipation
I
F(AV)
= 5A
δ
=0.5
TO-220AC / DPAK Tc= 102°C
ISOWATT220AC / Tc= 84°C
TO-220FPAC
13
W
Conditions
Value
4.0
5.5
12
W
Unit
°C/W
P
max
Total power dissipation
TO-220AC / DPAK Tc= 98°C
Pmax = P1 + P3 (P3 = 10% P1) ISOWATT220AC / Tc= 78°C
TO-220FPAC
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
F
I
R
*
Parameter
Forward voltage drop
Reverse leakage current
Threshold voltage
Dynamic resistance
Test conditions
I
F
=5A
V
R
=0.8 x
V
RRM
Ip < 3.I
AV
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Min
Typ
**
V
t0
Rd
Pulse test: * tp = 380
µs, δ
< 2%
** tp = 5 ms ,
δ
< 2%
To evaluate the maximum conduction losses use the following equation :
P = V
to
x I
F(AV)
+ rd x I
F2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
TURN-OFF SWITCHING
Symbol
t
rr
Parameter
Reverse recovery
time
I
RM
b
O
S
factor
so
t
fr
te
le
Maximum reverse
recovery current
Softness factor
ro
P
uc
d
s)
t(
so
b
-O
te
le
r
P
od
0.3
1.35
s)
t(
uc
Max
2.2
2.0
V
V
100
2.0
86
1.57
V
Unit
µA
mA
mΩ
Test conditions
Min
Typ
45
Max
Unit
ns
Tj = 25°C
I
F
= 0.5 A
I
R
= 1A
Irr = 0.25A
I
F
= 1 A dI
F
/dt =-50A/µs V
R
=30V
Tj = 125°C VR = 600V
dI
F
/dt = -40 A/µs
dI
F
/dt = -500 A/µs
Tj = 125°C V
R
= 600V
dI
F
/dt = -500 A/µs
I
F
=5A
95
A
7.5
20
I
F
=5A
1.2
/
TURN-ON SWITCHING
Symbol
Parameter
Forward recovery
time
Test conditions
Tj = 25°C
I
F
=5 A, dI
F
/dt = 40 A/µs
measured at 1.1
×
V
F
max
Min
Typ
Max
900
Unit
ns
V
Fp
Peak forward voltage Tj = 25°C
I
F
=5A, dI
F
/dt = 40 A/µs
I
F
=40A, dI
F
/dt = 500 A/µs
V
35
50
2/10
STTA512D/F/B/FP
Fig. 1:
Conduction losses versus average current.
Fig. 2:
Forward voltage drop versus forward
current (maximum values).
IFM(A)
δ
= 0.1
δ
= 0.2
δ
= 0.5
P1(W)
13
12
11
10
9
8
7
6
5
4
3
2
1
0
100.00
Tj=125°C
10.00
δ
=1
1.00
0.10
IF(av) (A)
0
1
2
3
4
5
6
VFM(A)
0.01
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 3:
Peak reverse recovery current versus
dI
F
/dt (90% confidence).
Fig. 4:
Relative variation of thermal impedance
junction to case versus pulse duration (TO-220AC
and DPAK).
Zth(j-c)/Rth(j-c)
1.0
IRM(A)
40
VR=600V
Tj=125°C
IF=2*IF(av)
30
20
10
dIF/dt(A/µs)
0
0
100
200
300
IF=IF(av)
0.8
Fig. 5:
Relative variation of thermal impedance
junction to case versus pulse duration
(ISOWATT220AC and TO-220FPAC).
Zth(j-c)/Rth(j-c)
1.0
O
0.8
0.6
so
b
δ
= 0.5
δ
= 0.2
δ
= 0.1
te
le
ro
P
uc
d
400
s)
t(
so
b
-O
0.6
0.4
0.2
δ
= 0.5
δ
= 0.2
δ
= 0.1
P
te
le
1E-3
od
r
s)
t(
uc
Single pulse
tp(s)
1E-2
1E-1
1E+0
500
0.0
1E-4
Fig. 6:
Reverse recovery time versus dI
F
/dt (90%
confidence).
trr(ns)
400
350
300
250
IF=2*IF(av)
VR=600V
Tj=125°C
200
150
100
IF=IF(av)
0.4
0.2
Single pulse
tp(s)
50
0.0
1E-3
1E-2
1E-1
1E+0
1E+1
0
dIF/dt(A/µs)
0
100
200
300
400
500
3/10
STTA512D/F/B/FP
Fig. 7:
Softness factor (tb/ta) versus dI
F
/dt (typical
values).
Fig. 8:
Relative variation of dynamic parameters
versus junction temperature (reference Tj=125°C).
S factor
1.40
1.20
1.00
0.80
VR=600V
Tj=125°C
IF<2*IF(av)
1.1
S factor
1.0
0.9
IRM
0.8
dIF/dt(A/µs)
0.60
0
100
200
300
400
500
Tj(°C)
0.7
25
50
75
100
125
Fig. 9:
Transient peak forward voltage versus
dI
F
/dt (90% confidence).
VFP(V)
70
60
50
40
30
20
10
0
0
100
dIF/dt(A/µs)
200
300
IF=IF(av)
Tj=125°C
Fig. 10:
Forward recovery time versus dI
F
/dt (90%
confidence).
tfr(ns)
500
400
O
so
b
te
le
ro
P
uc
d
400
s)
t(
so
b
-O
300
200
100
P
te
le
100
200
od
r
s)
t(
uc
VFR=1.1*VF max.
IF=IF(av)
Tj=125°C
dIF/dt(A/µs)
300
400
500
500
0
4/10
STTA512D/F/B/FP
APPLICATION DATA
The 1200V TURBOSWITCH series has been
designed to provide the lowest overall power
losses in all high frequency or high pulsed current
operations. In such applications (Fig A to D),the
way of calculating the power losses is given below :
TOTAL LOSSES
due to the diode
P = P1+ P2+ P3+ P4+ P5
Watts
CONDUCTION
LOSSES
in the diode
REVERSE
LOSSES
in the diode
SWITCHING
LOSSES
in the diode
SWITCHING
LOSSES
in the tansistor
due to the diode
Fig. A :
“FREEWHEEL” MODE.
SWITCHING
TRANSISTOR
O
so
VR
b
te
le
ro
P
uc
d
s)
t(
so
b
-O
P
te
le
od
r
s)
t(
uc
DIODE:
TURBOSWITCH
IL
t
T
F = 1/T
= t/T
LOAD
5/10
Power technology
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