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BC856SH6327XTSA1

Description
Bipolar Transistors - BJT AF TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size846KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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Bipolar Transistors - BJT AF TRANSISTOR

BC856SH6327XTSA1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-G6
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage65 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)200
JESD-30 codeR-PDSO-G6
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals6
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
GuidelineAEC-Q101
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
BC856S/U_BC857S
PNP Silicon AF Transistor Arrays
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Two (galvanic) internal isolated transistor
with good matching in one package
BC856S / U, BC857S: For orientation in reel see
package information below
Pb-free (RoHS compliant) package
Qualified according AEC Q101
BC856S/U
BC857S
C1
6
B2
5
E2
4
TR2
TR1
1
E1
2
B1
3
C2
EHA07175
Type
BC856S
BC856U
BC857S
Marking
3Ds
3Ds
3Cs
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
1
2011-07-25
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