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BLF6G27LS-100118

Description
RF MOSFET Transistors Single 65V 29A 0.16Ohms
Categorysemiconductor    Discrete semiconductor   
File Size128KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BLF6G27LS-100118 Overview

RF MOSFET Transistors Single 65V 29A 0.16Ohms

BLF6G27LS-100118 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerNXP
Product CategoryRF MOSFET Transistors
RoHSDetails
Transistor PolarityN-Channel
Id - Continuous Drain Current29 A
Vds - Drain-Source Breakdown Voltage65 V
Rds On - Drain-Source Resistance160 mOhms
TechnologySi
Gain17 dB
Output Power14 W
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Package / CaseSOT-502B
PackagingCut Tape
PackagingMouseReel
PackagingReel
ConfigurationSingle
Operating Frequency2.5 GHz to 2.7 GHz
TypeRF Power MOSFET
Factory Pack Quantity100
Vgs - Gate-Source Voltage13 V
Vgs th - Gate-Source Threshold Voltage2 V
BLF6G27-100; BLF6G27LS-100
WiMAX power LDMOS transistor
Rev. 02 — 8 July 2010
Product data sheet
1. Product profile
1.1 General description
100 W LDMOS power transistor for base station applications at frequencies from
2500 MHz to 2700 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
°
C in a class-AB production test circuit.
Mode of operation
BLF6G27-100
1-carrier W-CDMA
[1]
1-carrier N-CDMA
[2]
BLF6G27LS-100
1-carrier W-CDMA
[1]
1-carrier N-CDMA
[2]
[1]
[2]
[3]
f
(MHz)
2500 to 2700
2500 to 2700
2500 to 2700
2500 to 2700
V
DS
(V)
28
28
28
28
P
L(AV)
(W)
14
14
14
14
G
p
(dB)
16.5
17
17
17
η
D
(%)
23
23
23
23
ACPR
885k
(dBc)
-
−50
[3]
-
−50
[3]
ACPR
1980k
(dBc)
-
−65
[3]
-
−65
[3]
ACPR
5M
(dBc)
−40
-
−41
-
ACPR
10M
(dBc)
−59
-
−60
-
Signal is a one carrier, TM1 W-CDMA signal with 64 DPCH and 100 % clipping. PAR is 9.65 dB at 0.01 % probability on CCDF.
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 to 13). PAR = 9.7 dB at 0.01 % probability on the
CCDF. Channel bandwidth is 1.2288 MHz.
Measured within 30 kHz bandwidth.
1.2 Features and benefits
Typical 1-carrier W-CDMA performance (single carrier W-CDMA TM1 with 64 DPCH
and 100 % clipping; PAR = 9.65 dB at 0.01 % probability on the CCDF; channel
bandwidth is 3.84 MHz) at a frequency of 2500 MHz, 2600 MHz and 2700 MHz, a
supply voltage of 28 V and an I
Dq
of 900 mA:
Average output power = 14 W
Power gain = 17 dB
Drain efficiency = 23 %
ACPR
5M
=
−41
dBc
Typical 1-carrier N-CDMA performance (single carrier IS-95 with pilot, paging, sync
and 6 traffic channels [Walsh codes 8 to 13]. PAR = 9.7 dB at 0.01 % probability on the
CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 2500 MHz, 2600 MHz
and 2700 MHz, a supply voltage of 28 V and an I
Dq
of 900 mA:
Average output power = 14 W
Power gain = 17 dB
Drain efficiency = 23 %
ACPR
885k
=
−50
dBc (within 30 kHz bandwidth)

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Description RF MOSFET Transistors Single 65V 29A 0.16Ohms RF MOSFET Transistors WiMAX PWR LDMOS Transistor RF MOSFET Transistors RF Power Transistor RF MOSFET Transistors Single 65V 29A 0.16Ohms
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