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GS74116TP-8

Description
Standard SRAM, 256KX16, 8ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
Categorystorage    storage   
File Size184KB,14 Pages
ManufacturerGSI Technology
Websitehttp://www.gsitechnology.com/
Download Datasheet Parametric View All

GS74116TP-8 Overview

Standard SRAM, 256KX16, 8ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44

GS74116TP-8 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerGSI Technology
Parts packaging codeTSOP2
package instructionTSOP2, TSOP44,.46,32
Contacts44
Reach Compliance Codecompliant
ECCN code3A991.B.2.B
Maximum access time8 ns
I/O typeCOMMON
JESD-30 codeR-PDSO-G44
JESD-609 codee0
length18.41 mm
memory density4194304 bit
Memory IC TypeSTANDARD SRAM
memory width16
Humidity sensitivity level3
Number of functions1
Number of terminals44
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Encapsulate equivalent codeTSOP44,.46,32
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum standby current0.01 A
Minimum standby current3.14 V
Maximum slew rate0.15 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.16 mm
Base Number Matches1
GS74116TP/J/U
SOJ, TSOP, FP-BGA
Commercial Temp
Industrial Temp
Features
• Fast access time: 8, 10, 12, 15ns
• CMOS low power operation: 170/145/130/110 mA at min.cycle time.
• Single 3.3V ± 0.3V power supply
• All inputs and outputs are TTL compatible
• Byte control
• Fully static operation
• Industrial Temperature Option: -40° to 85°C
• Package line up
J: 400mil, 44 pin SOJ package
TP: 400mil, 44 pin TSOP Type II package
U: 7.20mm x 11.65mm Fine Pitch Ball Grid Array package
256K x 16
4Mb Asynchronous SRAM
SOJ 256K x 16 Pin Configuration
A
4
A
3
A
2
A
1
A
0
CE
DQ
1
DQ
2
DQ
3
DQ
4
V
DD
V
SS
DQ
5
DQ6
DQ7
DQ
8
WE
A
15
A
14
A
13
A
12
A
16
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
8, 10, 12, 15ns
3.3V V
DD
Center V
DD
& V
SS
Top view
44 pin
SOJ
Description
The GS74116 is a high speed CMOS static RAM organized as
262,144-words by 16-bits. Static design eliminates the need for exter-
nal clocks or timing strobes. Operating on a single 3.3V power supply
and all inputs and outputs are TTL compatible. The GS74116 is avail-
able in a 7.2x11.65 mm Fine Pitch BGA package, 400 mil SOJ and
400 mil TSOP Type-II packages.
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A
5
A
6
A
7
OE
UB
LB
DQ
16
DQ
15
DQ
14
DQ
13
V
SS
V
DD
DQ
12
DQ
11
DQ
10
DQ
9
NC
A
8
A
9
A
10
A
11
A
17
Pin Descriptions
Symbol
A
0
to A
17
DQ
1
to DQ
16
CE
LB
UB
WE
OE
V
DD
V
SS
NC
Description
Address input
Data input/output
Chip enable input
Lower byte enable input
(DQ1 to DQ8)
Upper byte enable input
(DQ9 to DQ16)
Write enable input
Output enable input
+3.3V power supply
Ground
No connect
Fine Pitch BGA 256K x 16 Bump Configuration
1
2
3
4
5
6
A
B
C
D
E
F
G
H
LB
DQ
16
OE
UB
A
0
A
3
A
5
A
17
NC
A
8
A
10
A
13
A
1
A
4
A
6
A
7
A
16
A
9
A
11
A
14
A
2
CE
DQ
2
DQ
4
DQ
5
DQ
7
WE
A
15
NC
DQ
1
DQ
3
V
DD
V
SS
DQ
6
DQ
8
NC
DQ
14
DQ
15
V
SS
V
DD
DQ
13
DQ
12
DQ
11
DQ
10
DQ
9
NC
NC
A
12
7.2x11.65mm 0.75mm Bump Pitch
Top View
Rev: 2.02 3/2000
1/14
© 1999, Giga Semiconductor, Inc.
N
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

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