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EE-SY190

Description
POSITION, LINEAR SENSOR-DIFFUSE, 4-5mm, 0.05-0.60mA, RECTANGULAR, THROUGH HOLE MOUNT
CategoryThe sensor   
File Size339KB,3 Pages
ManufacturerETC
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EE-SY190 Overview

POSITION, LINEAR SENSOR-DIFFUSE, 4-5mm, 0.05-0.60mA, RECTANGULAR, THROUGH HOLE MOUNT

EE-SY190
Dimensions
Note:
All units are in millimeters unless otherwise indicated.
5
Micro-displacement Sensor
Features
High-precision optical technology ensures excellent
limited sensing range and sensing position
characteristics.
Ideal for paper/OHP detection in OA/CP markets.
Compact package (length 18mm x width 6mm x
height 9 mm).
Absolute Maximum Ratings
(Ta = 25°C)
1.6
Two, 1.3 dia.
3
2.54
Four, 0.4
×
0.4
Item
Emitter
Forward current
Pulse forward
current
Reverse
voltage
Receiver
Collector-emitter
voltage
Emitter-collector
voltage
Symbol
I
F
I
FP
V
R
V
CEO
V
ECO
I
C
P
C
Topr
Tstg
Tsol
Rated value
50 mA
(See Note 1.)
1A
(See Note 2.)
4V
30 V
---
20 mA
100 mW
(See Note 1.)
-25°C to 85°C
-40°C to 100°C
260°C
(10 secs max.)
Internal Circuit
K
C
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
3 mm max.
3 < mm
±
6
6 < mm
±
10
10 < mm
±
18
18 < mm
±
30
Tolerance
±0.3
±0.375
±0.45
±0.55
±0.65
Ambient
be
t
t
temperature
Collector
current
Collector
dissipation
Operating
Storage
Soldering
A
E
Terminal No.
A
K
C
E
Name
Anode
Cathode
Collector
Emitter
Note: 1. Refer to the Temperature Characteristics
curves contained within the Engineering Data
section if temperature exceeds
25°C
.
2. The pulse width is 10
µs
maximum with a fre-
quency of 100 Hz.
Ordering Information
Description
Micro-displacement sensor
EE-SY190
Part number
Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
e
Forward voltage
Reverse current
Peak emission wavelength
Receiver
Light current (See Note)
V
F
I
R
λ
P(L)
I
L
Symbol
10
µA
max.
940 nm typ.
50
µA
min., 180
µA
typ.,
600
µA
max.
Value
1.2 V typ., 1.5 V max.
I
F
= 30 mA
V
R
= 4 V
I
F
= 30 mA
I
F
= 20 mA, V
CE
= 5 V
White paper with a reflection factor of
90%, d = 4.5 mm
(See Note 1.)
V
CE
= 5 V, 0
ℓx
I
F
= 20 mA, V
CE
= 5 V without object
V
CE
=5 V
V
CC
= 5 V, R
L
= 1 kΩ, I
L
= 200
µA
V
CC
= 5 V, R
L
= 1 kΩ, I
L
= 200
µA
Condition
Dark current
Leakage current
Peak spectral sensitivity
wavelength
Rising time
Falling time
I
D
I
LEAK
λ
P(P)
tr
tf
2 nA typ., 100 nA max.
1
µA
max.
850 nm typ.
30
µs
typ.
30
µs
typ.
Note:
The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
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