ES2A
THRU
ES2J
2.0 AMPS. Super Fast Surface Mount Rectifiers
Voltage Range
50 to 600 Volts
Current
2.0 Amperes
Features
Glass passivated junction chip
For surface mounted application
Low profile package
Built-in strain relief
Ideal for automated placement
Easy pick and place
Superfast recovery time for high efficiency
Glass passivated chip junction
High temperature soldering:
O
260 C/10 seconds at terminals
Plastic material used carries Underwriters
Laboratory Classification 94V-O
.082(2.08)
.076(1.93)
SMB/DO-214AA
.147(3.73)
.137(3.48)
.187(4.75)
.167(4.25)
.012(.31)
.006(.15)
.103(2.61)
.078(1.99)
.012(.31)
.006(.15)
.056(1.41)
.035(0.90)
.208(5.28)
.200(5.08)
.008(.20)
.004(.10)
Mechanical Data
Cases: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Packing: 12mm tape per E1A STD RS-481
Weight: 0.093 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol ES ES ES
Type Number
2A 2B 2C
Maximum Recurrent Peak Reverse
50 100 150
V
RRM
Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current See Fig. 1
Peak Forward Surge Current, 8.3 ms
Single Half Sine-wave Superimposed on
Rated Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 2.0A
Maximum DC Reverse Current
@T
A
=25℃ at Rated DC Blocking Voltage
@ T
A
=100℃
Maximum Reverse Recovery Time
( Note 1 )
Typical Junction Capacitance ( Note 2 )
Maximum Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
ES
2D
200
140
200
ES
2F
300
210
300
ES
2G
400
280
400
ES
2H
500
350
500
ES
2J
600
420
600
Units
V
V
V
A
A
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θ
JA
R
θ
JL
T
J
T
STG
35
50
70
100
105
150
2.0
50
0.95
10
350
35
25
75
20
-55 to +150
-55 to + 150
20
1.3
1.7
V
uA
uA
nS
pF
℃/W
℃
℃
Notes: 1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2. Measured at 1 MHz and Applied V
R
=4.0 Volts
3. Units Mounted on P.C.B. 0.4 x 0.4" (10 x 10mm) Pad Areas
- 168 -
RATINGS AND CHARACTERISTIC CURVES (ES2A THRU ES2J)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
3.0
60
RESISTIVE OR
INDUCTIVE LOAD
0.4X0.4"(10X10mm)
COPPER PAD AREAS
2.0
FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT. (A)
8.3ms Single Half Sine Wave
o
(JEDEC Method) at T
L
=120 C
AVERAGE FORWARD CURRENT. (A)
50
40
30
1.0
20
10
0
1
10
NUMBER OF CYCLES AT 60Hz
100
0
80
90
100
110
120
o
130
140
150
LEAD TEMPERATURE. ( C)
60
FIG.3- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
Tj=25 C
PULSE WIDTH-300 S
1% DUTY CYCLE
0
FIG.4- TYPICAL REVERSE CHARACTERISTICS
1000
INSTANTANEOUS FORWARD CURRENT. (A)
INSTANTANEOUS REVERSE CURRENT. ( A)
10
100
Tj=125
0
C
2A
-D
ES
ES
2F
-G
ES
2H
1
-J
10
Tj=85
0
C
1
Tj=25
0
C
0.1
0.1
0.01
0.4
0.01
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
20
40
60
80
100
120
140
FORWARD VOLTAGE. (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.5- TYPICAL JUNCTION CAPACITANCE
60
JUNCTION CAPACITANCE.(pF)
50
Tj=25
0
C
f=1.0MHz
Vsig=50mVp-p
40
30
20
ES
2A
-D
ES
2F
-J
10
0
0
1
10
100
REVERSE VOLTAGE. (V)
- 169 -
Microcontroller MCU
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