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30L269

Description
Rectifier Diode, Avalanche, 1 Element, 0.3A, 26900V V(RRM), Silicon
CategoryDiscrete semiconductor    diode   
File Size56KB,1 Pages
ManufacturerEDAL
Websitehttp://www.edal.com/
Download Datasheet Parametric View All

30L269 Overview

Rectifier Diode, Avalanche, 1 Element, 0.3A, 26900V V(RRM), Silicon

30L269 Parametric

Parameter NameAttribute value
MakerEDAL
package instructionO-XALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-XALF-W2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current0.3 A
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage26900 V
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
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Index Files: 2299  319  2497  1171  2704  47  7  51  24  55 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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