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BCW70LT1

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size243KB,5 Pages
ManufacturerShandong Yiguang Electronic Joint Stock Co., Ltd.
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Transistor

BCW70LT1 Parametric

Parameter NameAttribute value
MakerShandong Yiguang Electronic Joint Stock Co., Ltd.
package instruction,
Reach Compliance Codeunknown
Base Number Matches1
SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
BCW69/70LT1
TECHNICAL DATA
PNP EPITAXIAL SILICON TRANSISTO
R
SURFACE MOUNT SMALL SIGNAL TRANSISTORS
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Package:
SOT-23
Characteristic
Symbol
Vcbo
Vceo
Vebo
Ic
I
CM
I
EM
P
D
Tj
Tstg
Rating
-50
-45
-5.0
-100
-200
-200
310
150
-65-150
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Power Dissipation at T
SB
=50℃(Note1)
Junction Temperature
Storage Temperature
V
V
V
mA
mA
mA
mW
PIN:
STYLE
NO.1
B
E
C
1
2
3
ELECTRICAL CHARACTERISTICS at Ta=25℃
Characteristic
DC Current Gain
(Note2)
Current Gain Group A
Current Gain Group A
BCW69
BCW70
Hfe
120
215
180
260
500
Vce=-5.0V
Ic= -2.0mA
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector-Emitter Saturation Voltage
Vce(sat)
-90
-250
300
650
mV
Ic= -10mA Ib= -0.5mA
Ic= -100mA Ib= -5.0mA
Base-Emitter Saturation Voltage
Vbe(sat)
-700
-900
mV
Ic= -10mA Ib= -0.5mA
Ic= -100mA Ib= -5.0mA
Base-Emitter Voltage
Vbe
-600
-660
-750
-800
mV
Vce= -5.0V Ic= -2.0mA
Vce= -5.0V Ic= -10mA
Collector-Emitter Cutoff Current
Ices
-0.2
-15
-4.0
nA
uA
MHz
Vce= -50V
Vce= -50V,Tj=125℃
Vce=-5V
f=100MHz
Ic=-10mA
Gain Bandwidth Product
f
T
150
Collector-Base Capacitance
Noise Figure
Ccbo
NF
2.0
6.0
10
pF
dB
Vcb= -10V f=1.0MHz
Vce=-5VIc=-200uA R
G
=2kΩ
f=1MHz
△f=200MHz
Note1:Device mounted on ceramic substrate 0.7mmⅹ2.5mm
2
area.
Note2: Current gain subgroup “c” is not available for BC856.
DEVICE MARKING:
BCW69LT1=H1
BCW70LT1=H2

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BCW70LT1 BCW69LT1
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