IS61C67-L15N datasheet, PDF - EEWORLD Datasheet

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IS61C67-L15N: Description16K X 1 HIGH SPEED CMOS STATIC RAM; Categorystorage storage; File Size329KB，8 Pages; ManufacturerISSI(Integrated Silicon Solution Inc.); Websitehttp://www.issi.com/

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IS61C67-L15N Overview

16K X 1 HIGH SPEED CMOS STATIC RAM

IS61C67-L15N Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	ISSI(Integrated Silicon Solution Inc.)
package instruction	0.300 INCH, PLASTIC, DIP-20
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	15 ns
I/O type	SEPARATE
JESD-30 code	R-PDIP-T20
JESD-609 code	e0
length	25.527 mm
memory density	16384 bit
Memory IC Type	STANDARD SRAM
memory width	1
Number of functions	1
Number of terminals	20
word count	16384 words
character code	16000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	16KX1
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP20,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Maximum seat height	4.572 mm
Maximum standby current	0.0001 A
Minimum standby current	2 V
Maximum slew rate	0.1 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
width	7.62 mm

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IS61C67-L15N Related Products

	IS61C67-L15N	IS61C67	IS61C67-15N	IS61C67-20N	IS61C67-L20N	IS61C67-25N	IS61C67-L25N
Description	16K X 1 HIGH SPEED CMOS STATIC RAM	16K X 1 HIGH SPEED CMOS STATIC RAM	16K X 1 HIGH SPEED CMOS STATIC RAM	16K X 1 HIGH SPEED CMOS STATIC RAM	16K X 1 HIGH SPEED CMOS STATIC RAM	16K X 1 HIGH SPEED CMOS STATIC RAM	16K X 1 HIGH SPEED CMOS STATIC RAM
Is it Rohs certified?	incompatible	-	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	ISSI(Integrated Silicon Solution Inc.)	-	-	ISSI(Integrated Silicon Solution Inc.)	ISSI(Integrated Silicon Solution Inc.)	-	ISSI(Integrated Silicon Solution Inc.)
package instruction	0.300 INCH, PLASTIC, DIP-20	-	DIP, DIP20,.3	0.300 INCH, PLASTIC, DIP-20	0.300 INCH, PLASTIC, DIP-20	DIP, DIP20,.3	0.300 INCH, PLASTIC, DIP-20
Reach Compliance Code	unknown	-	not_compliant	unknown	unknown	not_compliant	unknown
ECCN code	EAR99	-	-	EAR99	EAR99	-	EAR99
Maximum access time	15 ns	-	15 ns	20 ns	20 ns	25 ns	25 ns
I/O type	SEPARATE	-	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE
JESD-30 code	R-PDIP-T20	-	R-PDIP-T20	R-PDIP-T20	R-PDIP-T20	R-PDIP-T20	R-PDIP-T20
JESD-609 code	e0	-	e0	e0	e0	e0	e0
length	25.527 mm	-	25.527 mm	25.527 mm	25.527 mm	25.527 mm	25.527 mm
memory density	16384 bit	-	16384 bit	16384 bit	16384 bit	16384 bit	16384 bit
Memory IC Type	STANDARD SRAM	-	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	1	-	1	1	1	1	1
Number of functions	1	-	1	1	1	1	1
Number of terminals	20	-	20	20	20	20	20
word count	16384 words	-	16384 words	16384 words	16384 words	16384 words	16384 words
character code	16000	-	16000	16000	16000	16000	16000
Operating mode	ASYNCHRONOUS	-	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	-	70 °C	70 °C	70 °C	70 °C	70 °C
organize	16KX1	-	16KX1	16KX1	16KX1	16KX1	16KX1
Output characteristics	3-STATE	-	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	DIP	-	DIP	DIP	DIP	DIP	DIP
Encapsulate equivalent code	DIP20,.3	-	DIP20,.3	DIP20,.3	DIP20,.3	DIP20,.3	DIP20,.3
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	-	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Parallel/Serial	PARALLEL	-	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
power supply	5 V	-	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	4.572 mm	-	4.572 mm	4.572 mm	4.572 mm	4.572 mm	4.572 mm
Maximum standby current	0.0001 A	-	0.004 A	0.003 A	0.0001 A	0.002 A	0.0001 A
Minimum standby current	2 V	-	4.5 V	4.5 V	2 V	4.5 V	2 V
Maximum slew rate	0.1 mA	-	0.1 mA	0.085 mA	0.085 mA	0.075 mA	0.075 mA
Maximum supply voltage (Vsup)	5.5 V	-	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	-	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	-	5 V	5 V	5 V	5 V	5 V
surface mount	NO	-	NO	NO	NO	NO	NO
technology	CMOS	-	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	-	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	-	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	-	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm
Terminal location	DUAL	-	DUAL	DUAL	DUAL	DUAL	DUAL
width	7.62 mm	-	7.62 mm	7.62 mm	7.62 mm	7.62 mm	7.62 mm

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